AU654671B2 - Aerosol deposition and film formation of silicon - Google Patents

Aerosol deposition and film formation of silicon Download PDF

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Publication number
AU654671B2
AU654671B2 AU84376/91A AU8437691A AU654671B2 AU 654671 B2 AU654671 B2 AU 654671B2 AU 84376/91 A AU84376/91 A AU 84376/91A AU 8437691 A AU8437691 A AU 8437691A AU 654671 B2 AU654671 B2 AU 654671B2
Authority
AU
Australia
Prior art keywords
silicon
substrate
powder
silicon film
hours
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU84376/91A
Other languages
English (en)
Other versions
AU8437691A (en
Inventor
Kamesh V Gadepally
Roger M Hawk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Arkansas System
Original Assignee
University of Arkansas at Fayetteville
University of Arkansas at Little Rock
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Arkansas at Fayetteville, University of Arkansas at Little Rock filed Critical University of Arkansas at Fayetteville
Publication of AU8437691A publication Critical patent/AU8437691A/en
Application granted granted Critical
Publication of AU654671B2 publication Critical patent/AU654671B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
    • B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
    • B05B5/03—Discharge apparatus, e.g. electrostatic spray guns characterised by the use of gas, e.g. electrostatically assisted pneumatic spraying
    • B05B5/032—Discharge apparatus, e.g. electrostatic spray guns characterised by the use of gas, e.g. electrostatically assisted pneumatic spraying for spraying particulate materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H10P14/22—
    • H10P14/2905—
    • H10P14/2921—
    • H10P14/2923—
    • H10P14/3411—
    • H10P14/36—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AU84376/91A 1990-11-09 1991-07-23 Aerosol deposition and film formation of silicon Ceased AU654671B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US611428 1990-11-09
US07/611,428 US5075257A (en) 1990-11-09 1990-11-09 Aerosol deposition and film formation of silicon
PCT/US1991/005063 WO1992009100A1 (en) 1990-11-09 1991-07-23 Aerosol deposition and film formation of silicon

Publications (2)

Publication Number Publication Date
AU8437691A AU8437691A (en) 1992-06-11
AU654671B2 true AU654671B2 (en) 1994-11-17

Family

ID=24448980

Family Applications (1)

Application Number Title Priority Date Filing Date
AU84376/91A Ceased AU654671B2 (en) 1990-11-09 1991-07-23 Aerosol deposition and film formation of silicon

Country Status (5)

Country Link
US (1) US5075257A (enExample)
EP (1) EP0510128A1 (enExample)
JP (1) JPH05505909A (enExample)
AU (1) AU654671B2 (enExample)
WO (1) WO1992009100A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5565052A (en) * 1992-03-05 1996-10-15 Industrieanlagen-Betriebsgesellschaft Gmbh Method for the production of a reflector
DE4220472C2 (de) * 1992-03-05 2002-08-22 Industrieanlagen Betriebsges Verfahren zur Herstellung von Leichtbaureflektoren mittels Silicium-Wafern
US5320864A (en) * 1992-06-29 1994-06-14 Lsi Logic Corporation Sedimentary deposition of photoresist on semiconductor wafers
US5330883A (en) * 1992-06-29 1994-07-19 Lsi Logic Corporation Techniques for uniformizing photoresist thickness and critical dimension of underlying features
US5576248A (en) * 1994-03-24 1996-11-19 Starfire Electronic Development & Marketing, Ltd. Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
US5559057A (en) * 1994-03-24 1996-09-24 Starfire Electgronic Development & Marketing Ltd. Method for depositing and patterning thin films formed by fusing nanocrystalline precursors
US5518546A (en) * 1994-10-05 1996-05-21 Enexus Corporation Apparatus for coating substrates with inductively charged resinous powder particles
US6127289A (en) * 1997-09-05 2000-10-03 Lucent Technologies, Inc. Method for treating semiconductor wafers with corona charge and devices using corona charging
JP2963993B1 (ja) * 1998-07-24 1999-10-18 工業技術院長 超微粒子成膜法
US6746539B2 (en) 2001-01-30 2004-06-08 Msp Corporation Scanning deposition head for depositing particles on a wafer
US6827969B1 (en) 2003-12-12 2004-12-07 General Electric Company Field repairable high temperature smooth wear coating
KR20060057826A (ko) * 2004-11-24 2006-05-29 삼성전자주식회사 나노입자를 제조하기 위한 방법 및 장치
US20090017292A1 (en) * 2007-06-15 2009-01-15 Henry Hieslmair Reactive flow deposition and synthesis of inorganic foils
DE102010005375A1 (de) * 2010-01-22 2011-07-28 MTU Aero Engines GmbH, 80995 Vorrichtung und Verfahren zum Pulverspritzen mit erhöhter Gasstromgeschwindigkeit
EP2530723A3 (en) 2011-06-03 2014-01-15 Sony Corporation Photovoltaic device comprising silicon microparticles
EP2910300A4 (en) * 2012-11-27 2016-07-27 Laminar Co Ltd REACTION DEVICE FOR MIXING AND MANUFACTURING PROCESS USING THE REACTION DEVICE
WO2019125933A1 (en) * 2017-12-19 2019-06-27 Applied Materials, Inc. Method and precursor selection for flowable silicon dioxide gap fill for advanced memory application
US11764057B2 (en) 2021-05-24 2023-09-19 Che Inc. Method of forming structure having coating layer and structure having coating layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040849A (en) * 1976-01-06 1977-08-09 General Electric Company Polycrystalline silicon articles by sintering
US4779564A (en) * 1986-06-09 1988-10-25 Morton Thiokol, Inc. Apparatus for electrostatic powder spray coating and resulting coated product
AU632258B2 (en) * 1990-09-19 1992-12-17 Nordson Corporation Electrostatic spray gun

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3793049A (en) * 1969-06-16 1974-02-19 R Probst Electrostatic coating method
US4003770A (en) * 1975-03-24 1977-01-18 Monsanto Research Corporation Plasma spraying process for preparing polycrystalline solar cells
FR2401696A1 (fr) * 1977-08-31 1979-03-30 Ugine Kuhlmann Methode de depot de silicium cristallin en films minces sur substrats graphites
DE2941908C2 (de) * 1979-10-17 1986-07-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle
US4440800A (en) * 1980-04-24 1984-04-03 Unisearch Limited Vapor coating of powders
DE3019653A1 (de) * 1980-05-22 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Verbesserung eines verfahres zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen
US4332838A (en) * 1980-09-24 1982-06-01 Wegrzyn James E Particulate thin film fabrication process
DE3446286A1 (de) * 1984-12-19 1986-06-19 Sigri GmbH, 8901 Meitingen Verfahren zum beschichten von kohlenstoff- und graphitkoerpern
JPH0675692B2 (ja) * 1985-05-16 1994-09-28 小野田セメント株式会社 静電粉体塗装方法及塗装装置
US4615903A (en) * 1985-07-01 1986-10-07 The United States Of America As Represented By The Secretary Of The Navy Method for melt-coating a surface
US4865252A (en) * 1988-05-11 1989-09-12 The Perkin-Elmer Corporation High velocity powder thermal spray gun and method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040849A (en) * 1976-01-06 1977-08-09 General Electric Company Polycrystalline silicon articles by sintering
US4779564A (en) * 1986-06-09 1988-10-25 Morton Thiokol, Inc. Apparatus for electrostatic powder spray coating and resulting coated product
AU632258B2 (en) * 1990-09-19 1992-12-17 Nordson Corporation Electrostatic spray gun

Also Published As

Publication number Publication date
EP0510128A1 (en) 1992-10-28
US5075257A (en) 1991-12-24
AU8437691A (en) 1992-06-11
WO1992009100A1 (en) 1992-05-29
EP0510128A4 (enExample) 1994-04-06
JPH05505909A (ja) 1993-08-26

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Date Code Title Description
MK14 Patent ceased section 143(a) (annual fees not paid) or expired