AU557135B2 - Magnetron cathode sputtering system - Google Patents
Magnetron cathode sputtering systemInfo
- Publication number
- AU557135B2 AU557135B2 AU14682/83A AU1468283A AU557135B2 AU 557135 B2 AU557135 B2 AU 557135B2 AU 14682/83 A AU14682/83 A AU 14682/83A AU 1468283 A AU1468283 A AU 1468283A AU 557135 B2 AU557135 B2 AU 557135B2
- Authority
- AU
- Australia
- Prior art keywords
- cathode
- anode
- substrate
- rod
- field lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Microwave Tubes (AREA)
- Particle Accelerators (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8202092 | 1982-05-21 | ||
| NL8202092A NL8202092A (nl) | 1982-05-21 | 1982-05-21 | Magnetronkathodesputtersysteem. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AU1468283A AU1468283A (en) | 1983-11-24 |
| AU557135B2 true AU557135B2 (en) | 1986-12-04 |
Family
ID=19839767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU14682/83A Ceased AU557135B2 (en) | 1982-05-21 | 1983-05-19 | Magnetron cathode sputtering system |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4427524A (en:Method) |
| EP (1) | EP0095211B1 (en:Method) |
| JP (1) | JPS58210167A (en:Method) |
| AT (1) | ATE29623T1 (en:Method) |
| AU (1) | AU557135B2 (en:Method) |
| CA (1) | CA1193998A (en:Method) |
| DE (1) | DE3373590D1 (en:Method) |
| NL (1) | NL8202092A (en:Method) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4515675A (en) * | 1983-07-06 | 1985-05-07 | Leybold-Heraeus Gmbh | Magnetron cathode for cathodic evaportion apparatus |
| US4508612A (en) * | 1984-03-07 | 1985-04-02 | International Business Machines Corporation | Shield for improved magnetron sputter deposition into surface recesses |
| EP0162643B1 (en) * | 1984-05-17 | 1989-04-12 | Varian Associates, Inc. | Sputter coating source having plural target rings |
| US4606806A (en) * | 1984-05-17 | 1986-08-19 | Varian Associates, Inc. | Magnetron sputter device having planar and curved targets |
| JPS62287073A (ja) * | 1986-06-04 | 1987-12-12 | Sony Corp | マグネトロンスパツタリング用カソ−ド装置 |
| US4728406A (en) * | 1986-08-18 | 1988-03-01 | Energy Conversion Devices, Inc. | Method for plasma - coating a semiconductor body |
| US4738761A (en) * | 1986-10-06 | 1988-04-19 | Microelectronics Center Of North Carolina | Shared current loop, multiple field apparatus and process for plasma processing |
| DE3634710A1 (de) * | 1986-10-11 | 1988-04-21 | Ver Glaswerke Gmbh | Vorrichtung zum vakuumbeschichten einer glasscheibe durch reaktive kathodenzerstaeubung |
| DE3721373A1 (de) * | 1987-06-29 | 1989-01-12 | Leybold Ag | Beschichtungsvorrichtung |
| DE3738845A1 (de) * | 1987-11-16 | 1989-05-24 | Leybold Ag | Zerstaeubungskatode nach dem magnetronprinzip |
| KR970002340B1 (ko) * | 1988-07-15 | 1997-03-03 | 미쓰비시 가세이 가부시끼가이샤 | 자기 기록 매체의 제조방법 |
| JP2934711B2 (ja) * | 1989-12-07 | 1999-08-16 | カシオ計算機株式会社 | スパッタ装置 |
| US5298720A (en) * | 1990-04-25 | 1994-03-29 | International Business Machines Corporation | Method and apparatus for contamination control in processing apparatus containing voltage driven electrode |
| US5045166A (en) * | 1990-05-21 | 1991-09-03 | Mcnc | Magnetron method and apparatus for producing high density ionic gas discharge |
| US5080772A (en) * | 1990-08-24 | 1992-01-14 | Materials Research Corporation | Method of improving ion flux distribution uniformity on a substrate |
| DE4221930C2 (de) * | 1991-11-21 | 2001-04-05 | Leybold Ag | Vorrichtung zur haftfesten Beschichtung eines Kunststoffsubstrats |
| JP2570594Y2 (ja) * | 1991-12-17 | 1998-05-06 | 日新電機株式会社 | 薄膜形成装置 |
| DE4202211A1 (de) * | 1992-01-28 | 1993-07-29 | Leybold Ag | Sputteranlage mit wenigstens einer magnetron-kathode |
| NL1000139C2 (nl) * | 1995-04-13 | 1996-10-15 | Od & Me Bv | Magnetronsputtersysteem. |
| CH691643A5 (de) | 1995-10-06 | 2001-08-31 | Unaxis Balzers Ag | Magnetronzerstäubungsquelle und deren Verwendung. |
| DE19614595A1 (de) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Vorrichtung zur Kathodenzerstäubung |
| US5863399A (en) * | 1996-04-13 | 1999-01-26 | Singulus Technologies Gmbh | Device for cathode sputtering |
| DE19614599A1 (de) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Vorrichtung zur Kathodenzerstäubung |
| DE19947932C1 (de) * | 1999-09-28 | 2001-04-26 | Fraunhofer Ges Forschung | Einrichtung zum Magnetronzerstäuben |
| US6783638B2 (en) * | 2001-09-07 | 2004-08-31 | Sputtered Films, Inc. | Flat magnetron |
| JP4563629B2 (ja) * | 2001-11-19 | 2010-10-13 | 株式会社エフ・ティ・エスコーポレーション | 対向ターゲット式スパッタ装置 |
| US7381311B2 (en) * | 2003-10-21 | 2008-06-03 | The United States Of America As Represented By The Secretary Of The Air Force | Filtered cathodic-arc plasma source |
| US8038850B2 (en) * | 2006-06-23 | 2011-10-18 | Qimonda Ag | Sputter deposition method for forming integrated circuit |
| US20080083611A1 (en) * | 2006-10-06 | 2008-04-10 | Tegal Corporation | High-adhesive backside metallization |
| US20090246385A1 (en) * | 2008-03-25 | 2009-10-01 | Tegal Corporation | Control of crystal orientation and stress in sputter deposited thin films |
| US8808513B2 (en) * | 2008-03-25 | 2014-08-19 | Oem Group, Inc | Stress adjustment in reactive sputtering |
| ES2374775B1 (es) * | 2009-04-03 | 2013-01-03 | Universidad De Castilla La Mancha | Unidad de pulverización catódica de blancos circulares. |
| US8482375B2 (en) * | 2009-05-24 | 2013-07-09 | Oem Group, Inc. | Sputter deposition of cermet resistor films with low temperature coefficient of resistance |
| US9127356B2 (en) * | 2011-08-18 | 2015-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Sputtering target with reverse erosion profile surface and sputtering system and method using the same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3330752A (en) * | 1964-12-31 | 1967-07-11 | Ibm | Method and apparatus for cathode sputtering including suppressing temperature rise adjacent the anode using a localized magnetic field |
| US3897325A (en) * | 1972-10-20 | 1975-07-29 | Nippon Electric Varian Ltd | Low temperature sputtering device |
| US4198283A (en) * | 1978-11-06 | 1980-04-15 | Materials Research Corporation | Magnetron sputtering target and cathode assembly |
| HU179482B (en) * | 1979-02-19 | 1982-10-28 | Mikroelektronikai Valalat | Penning pulverizel source |
| US4362611A (en) | 1981-07-27 | 1982-12-07 | International Business Machines Corporation | Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield |
-
1982
- 1982-05-21 NL NL8202092A patent/NL8202092A/nl not_active Application Discontinuation
-
1983
- 1983-05-06 US US06/492,107 patent/US4427524A/en not_active Expired - Fee Related
- 1983-05-17 EP EP83200697A patent/EP0095211B1/en not_active Expired
- 1983-05-17 DE DE8383200697T patent/DE3373590D1/de not_active Expired
- 1983-05-17 AT AT83200697T patent/ATE29623T1/de not_active IP Right Cessation
- 1983-05-19 CA CA000428547A patent/CA1193998A/en not_active Expired
- 1983-05-19 AU AU14682/83A patent/AU557135B2/en not_active Ceased
- 1983-05-20 JP JP58087822A patent/JPS58210167A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| AU1468283A (en) | 1983-11-24 |
| EP0095211A2 (en) | 1983-11-30 |
| US4427524A (en) | 1984-01-24 |
| CA1193998A (en) | 1985-09-24 |
| JPS58210167A (ja) | 1983-12-07 |
| EP0095211A3 (en) | 1984-05-09 |
| JPH0227433B2 (en:Method) | 1990-06-18 |
| NL8202092A (nl) | 1983-12-16 |
| ATE29623T1 (de) | 1987-09-15 |
| EP0095211B1 (en) | 1987-09-09 |
| DE3373590D1 (en) | 1987-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU557135B2 (en) | Magnetron cathode sputtering system | |
| US3767551A (en) | Radio frequency sputter apparatus and method | |
| US4381453A (en) | System and method for deflecting and focusing a broad ion beam | |
| US3514391A (en) | Sputtering apparatus with finned anode | |
| US4710283A (en) | Cold cathode ion beam source | |
| US3562142A (en) | R.f.sputter plating method and apparatus employing control of ion and electron bombardment of the plating | |
| JP2002530531A (ja) | イオン化物理蒸着のための方法および装置 | |
| AU6589398A (en) | Plasma processing system utilizing combined anode/ion source | |
| SE8700017D0 (sv) | Ion plasma electron gun | |
| US3530057A (en) | Sputtering | |
| JPS57194254A (en) | Cathode for insulator target in rf sputtering | |
| JPS57191950A (en) | Charged-particle source | |
| US3801719A (en) | Emitter block assembly | |
| GB1500095A (en) | Ion source using a hollow cathode discharge arrangement and a particle accelerator comprising such a source | |
| CN206363982U (zh) | 一种多电极的栅控电子枪 | |
| US3516920A (en) | Sputtering apparatus | |
| GB1420545A (en) | Evaporation by electron beans | |
| US3558467A (en) | Relating to radio frequency sputtering | |
| JPS6348931Y2 (en:Method) | ||
| GB735463A (en) | Improvements in or relating to electric discharge devices | |
| US3890532A (en) | Microwave amplifiers | |
| Takeuchi et al. | A compact ion source using a hollow cathode discharge and its application to thin film formation | |
| JPS5585672A (en) | Sputtering apparatus | |
| JPS589156B2 (ja) | イオン化プレ−テイング装置 | |
| Ja'fer et al. | A low-voltage, high-current, ion-bombardment source using magnetron principles |