AU523988B2 - Depositing epitaxial layer from gaseous phase - Google Patents

Depositing epitaxial layer from gaseous phase

Info

Publication number
AU523988B2
AU523988B2 AU46046/79A AU4604679A AU523988B2 AU 523988 B2 AU523988 B2 AU 523988B2 AU 46046/79 A AU46046/79 A AU 46046/79A AU 4604679 A AU4604679 A AU 4604679A AU 523988 B2 AU523988 B2 AU 523988B2
Authority
AU
Australia
Prior art keywords
epitaxial layer
gaseous phase
depositing epitaxial
depositing
gaseous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU46046/79A
Other languages
English (en)
Other versions
AU4604679A (en
Inventor
Paulus Zacharias Antonius Maria Van Der Putte
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of AU4604679A publication Critical patent/AU4604679A/en
Application granted granted Critical
Publication of AU523988B2 publication Critical patent/AU523988B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
AU46046/79A 1978-04-21 1979-04-12 Depositing epitaxial layer from gaseous phase Ceased AU523988B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7804268 1978-04-21
NLAANVRAGE7804268,A NL187414C (nl) 1978-04-21 1978-04-21 Werkwijze voor het aanbrengen van een epitaxiale laag.

Publications (2)

Publication Number Publication Date
AU4604679A AU4604679A (en) 1979-10-25
AU523988B2 true AU523988B2 (en) 1982-08-26

Family

ID=19830695

Family Applications (1)

Application Number Title Priority Date Filing Date
AU46046/79A Ceased AU523988B2 (en) 1978-04-21 1979-04-12 Depositing epitaxial layer from gaseous phase

Country Status (8)

Country Link
JP (1) JPS54141560A (ja)
AU (1) AU523988B2 (ja)
CA (1) CA1134059A (ja)
DE (1) DE2915883C2 (ja)
FR (1) FR2423865A1 (ja)
GB (1) GB2019644B (ja)
IT (1) IT1112317B (ja)
NL (1) NL187414C (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0671770B1 (en) * 1993-02-09 2000-08-02 GENERAL SEMICONDUCTOR, Inc. Multilayer epitaxy for a silicon diode
JP6477210B2 (ja) 2015-04-30 2019-03-06 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP6358472B2 (ja) * 2015-06-08 2018-07-18 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP6447960B2 (ja) * 2016-04-01 2019-01-09 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL288409A (ja) * 1962-02-02
DE2547692C3 (de) * 1975-10-24 1979-10-31 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer Halbleiteranordnung

Also Published As

Publication number Publication date
DE2915883C2 (de) 1987-01-22
IT7921949A0 (it) 1979-04-18
FR2423865A1 (fr) 1979-11-16
FR2423865B1 (ja) 1984-07-27
JPS54141560A (en) 1979-11-02
DE2915883A1 (de) 1979-10-31
CA1134059A (en) 1982-10-19
IT1112317B (it) 1986-01-13
AU4604679A (en) 1979-10-25
NL7804268A (nl) 1979-10-23
NL187414C (nl) 1991-09-16
GB2019644B (en) 1982-09-29
JPS5538819B2 (ja) 1980-10-07
NL187414B (nl) 1991-04-16
GB2019644A (en) 1979-10-31

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