AU467899B2 - Circuit arrangement having atleast one circuit element whichis energised by means of radiation and semiconductor device suitable for use in sucha circuit arrangement - Google Patents

Circuit arrangement having atleast one circuit element whichis energised by means of radiation and semiconductor device suitable for use in sucha circuit arrangement

Info

Publication number
AU467899B2
AU467899B2 AU39970/72A AU3997072A AU467899B2 AU 467899 B2 AU467899 B2 AU 467899B2 AU 39970/72 A AU39970/72 A AU 39970/72A AU 3997072 A AU3997072 A AU 3997072A AU 467899 B2 AU467899 B2 AU 467899B2
Authority
AU
Australia
Prior art keywords
circuit arrangement
circuit
sucha
atleast
energised
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU39970/72A
Other languages
English (en)
Other versions
AU3997072A (en
Inventor
MARIA HART and ARIE SLOB CORNELIUS
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7103772A external-priority patent/NL7103772A/xx
Priority claimed from NL7108373A external-priority patent/NL7108373A/xx
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of AU3997072A publication Critical patent/AU3997072A/en
Application granted granted Critical
Publication of AU467899B2 publication Critical patent/AU467899B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/02—Manually-operated control
    • H03G3/04—Manually-operated control in untuned amplifiers
    • H03G3/10—Manually-operated control in untuned amplifiers having semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/14—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
    • H04B10/806—Arrangements for feeding power
    • H04B10/807—Optical power feeding, i.e. transmitting power using an optical signal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/311—Design considerations for internal polarisation in bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R25/00—Deaf-aid sets, i.e. electro-acoustic or electro-mechanical hearing aids; Electric tinnitus maskers providing an auditory perception

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Logic Circuits (AREA)
  • Shift Register Type Memory (AREA)
  • Circuit Arrangements For Discharge Lamps (AREA)
AU39970/72A 1971-03-20 1972-03-14 Circuit arrangement having atleast one circuit element whichis energised by means of radiation and semiconductor device suitable for use in sucha circuit arrangement Expired AU467899B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
NL7103772A NL7103772A (enrdf_load_stackoverflow) 1971-03-20 1971-03-20
NLNL7103772 1971-03-20
NLNL7108373 1971-06-18
NL7108373A NL7108373A (enrdf_load_stackoverflow) 1971-06-18 1971-06-18

Publications (2)

Publication Number Publication Date
AU3997072A AU3997072A (en) 1973-09-20
AU467899B2 true AU467899B2 (en) 1975-12-18

Family

ID=26644637

Family Applications (1)

Application Number Title Priority Date Filing Date
AU39970/72A Expired AU467899B2 (en) 1971-03-20 1972-03-14 Circuit arrangement having atleast one circuit element whichis energised by means of radiation and semiconductor device suitable for use in sucha circuit arrangement

Country Status (13)

Country Link
JP (3) JPS5550390B1 (enrdf_load_stackoverflow)
AR (1) AR196071A1 (enrdf_load_stackoverflow)
AT (1) AT326193B (enrdf_load_stackoverflow)
AU (1) AU467899B2 (enrdf_load_stackoverflow)
BE (1) BE780961A (enrdf_load_stackoverflow)
BR (1) BR7201587D0 (enrdf_load_stackoverflow)
CA (3) CA964335A (enrdf_load_stackoverflow)
CH (1) CH550487A (enrdf_load_stackoverflow)
DE (1) DE2211384A1 (enrdf_load_stackoverflow)
FR (1) FR2130399B1 (enrdf_load_stackoverflow)
GB (1) GB1395032A (enrdf_load_stackoverflow)
IT (1) IT953971B (enrdf_load_stackoverflow)
SE (1) SE377735B (enrdf_load_stackoverflow)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
JPS5147583B2 (enrdf_load_stackoverflow) * 1972-12-29 1976-12-15
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
JPS5754969B2 (enrdf_load_stackoverflow) * 1974-04-04 1982-11-20
JPS57658B2 (enrdf_load_stackoverflow) * 1974-04-16 1982-01-07
JPS50137478A (enrdf_load_stackoverflow) * 1974-04-18 1975-10-31
JPS5714064B2 (enrdf_load_stackoverflow) * 1974-04-25 1982-03-20
JPS5648983B2 (enrdf_load_stackoverflow) * 1974-05-10 1981-11-19
JPS5718710B2 (enrdf_load_stackoverflow) * 1974-05-10 1982-04-17
JPS52105786A (en) * 1976-03-01 1977-09-05 Mitsubishi Electric Corp Semiconductor device
DE2641915A1 (de) * 1976-09-17 1978-03-23 Siemens Ag Monolithisch integrierte schaltung zur erzeugung von impulsen langer dauer
DE2641912C3 (de) * 1976-09-17 1980-05-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schaltungsanordnung zur Übertragung elektrischer Versorgungsleistungen
JPS5368990A (en) * 1976-12-01 1978-06-19 Fujitsu Ltd Production of semiconductor integrated circuit
JPS56150871A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device
GB2151843A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
JPS61154063A (ja) * 1984-12-26 1986-07-12 Toshiba Corp 光半導体装置およびその製造方法
FR2619959B1 (fr) * 1987-08-31 1991-06-14 Thomson Semiconducteurs Circuit de detection de lumiere
JP2800827B2 (ja) * 1988-02-12 1998-09-21 浜松ホトニクス株式会社 光半導体装置およびその製造方法
GB2220316B (en) * 1988-05-05 1992-01-29 Plessey Co Plc Improvements in and relating to oscillators
DE102010039258B4 (de) * 2010-08-12 2018-03-15 Infineon Technologies Austria Ag Transistorbauelement mit reduziertem Kurzschlussstrom

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2944165A (en) * 1956-11-15 1960-07-05 Otmar M Stuetzer Semionductive device powered by light
NL281945A (enrdf_load_stackoverflow) * 1960-10-14 1900-01-01
FR1377412A (fr) * 1962-10-08 1964-11-06 Fairchild Camera Instr Co Transistor épitaxique inverse
NL297821A (enrdf_load_stackoverflow) * 1962-10-08

Also Published As

Publication number Publication date
JPS5622145B2 (enrdf_load_stackoverflow) 1981-05-23
FR2130399B1 (enrdf_load_stackoverflow) 1977-09-02
IT953971B (it) 1973-08-10
DE2211384A1 (de) 1972-11-30
BR7201587D0 (pt) 1974-10-22
JPS55160466A (en) 1980-12-13
FR2130399A1 (enrdf_load_stackoverflow) 1972-11-03
SE377735B (enrdf_load_stackoverflow) 1975-07-21
GB1395032A (en) 1975-05-21
CA973955A (en) 1975-09-02
CH550487A (de) 1974-06-14
AR196071A1 (es) 1973-11-30
CA964335A (en) 1975-03-11
JPS55160465A (en) 1980-12-13
DE2211384C2 (enrdf_load_stackoverflow) 1989-06-15
CA970068A (en) 1975-06-24
AT326193B (de) 1975-11-25
ATA236072A (de) 1975-02-15
JPS5550390B1 (enrdf_load_stackoverflow) 1980-12-17
AU3997072A (en) 1973-09-20
JPS5622144B2 (enrdf_load_stackoverflow) 1981-05-23
JPS4736785A (enrdf_load_stackoverflow) 1972-11-29
BE780961A (fr) 1972-09-20

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