AU2860599A - Method for electrochemically etching a p-type semiconducting material, and a substrate of at least partly porous semiconducting material - Google Patents

Method for electrochemically etching a p-type semiconducting material, and a substrate of at least partly porous semiconducting material

Info

Publication number
AU2860599A
AU2860599A AU28605/99A AU2860599A AU2860599A AU 2860599 A AU2860599 A AU 2860599A AU 28605/99 A AU28605/99 A AU 28605/99A AU 2860599 A AU2860599 A AU 2860599A AU 2860599 A AU2860599 A AU 2860599A
Authority
AU
Australia
Prior art keywords
semiconducting material
substrate
electrochemically etching
partly porous
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU28605/99A
Other languages
English (en)
Inventor
Rint Willem Tjerkstra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stichting voor de Technische Wetenschappen STW
Original Assignee
Stichting voor de Technische Wetenschappen STW
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL1008441A external-priority patent/NL1008441C2/nl
Application filed by Stichting voor de Technische Wetenschappen STW filed Critical Stichting voor de Technische Wetenschappen STW
Publication of AU2860599A publication Critical patent/AU2860599A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/005—Bulk micromachining
    • B81C1/00515—Bulk micromachining techniques not provided for in B81C1/00507
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0114—Electrochemical etching, anodic oxidation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0115—Porous silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
AU28605/99A 1998-03-02 1999-03-02 Method for electrochemically etching a p-type semiconducting material, and a substrate of at least partly porous semiconducting material Abandoned AU2860599A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
NL1008441A NL1008441C2 (nl) 1998-03-02 1998-03-02 Werkwijze voor het elektrochemisch etsen van een p-type halfgeleidermateriaal, alsmede substraat van althans gedeeltelijk poreus halfgeleidermateriaal.
NL1008441 1998-03-02
NL1010234A NL1010234C1 (nl) 1998-03-02 1998-10-02 Werkwijze voor het elektrochemisch etsen van een p-type halfgeleidermateriaal, alsmede substraat van althans gedeeltelijk poreus halfgeleidermateriaal.
NL1010234 1998-10-02
PCT/NL1999/000111 WO1999045583A1 (en) 1998-03-02 1999-03-02 Method for electrochemically etching a p-type semiconducting material, and a substrate of at least partly porous semiconducting material

Publications (1)

Publication Number Publication Date
AU2860599A true AU2860599A (en) 1999-09-20

Family

ID=26642754

Family Applications (1)

Application Number Title Priority Date Filing Date
AU28605/99A Abandoned AU2860599A (en) 1998-03-02 1999-03-02 Method for electrochemically etching a p-type semiconducting material, and a substrate of at least partly porous semiconducting material

Country Status (3)

Country Link
AU (1) AU2860599A (nl)
NL (1) NL1010234C1 (nl)
WO (1) WO1999045583A1 (nl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10032579B4 (de) * 2000-07-05 2020-07-02 Robert Bosch Gmbh Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement
DE10046622B4 (de) * 2000-09-20 2010-05-20 Robert Bosch Gmbh Verfahren zur Herstellung einer Membransensoreinheit sowie Membransensoreinheit
DE10054484A1 (de) 2000-11-03 2002-05-08 Bosch Gmbh Robert Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
DE10055872B4 (de) * 2000-11-10 2004-02-05 Robert Bosch Gmbh Verfahren zur Herstellung einer porösen Struktur für ein Sieb oder einen Filter und poröse Struktur für ein Sieb oder einen Filter
DE10065026A1 (de) 2000-12-23 2002-07-04 Bosch Gmbh Robert Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
DE10138759A1 (de) * 2001-08-07 2003-03-06 Bosch Gmbh Robert Verfahren zur Herstellung eines Halbleiterbauelements sowie Halbleiterbauelement, insbesondere Membransensor
GR1004106B (el) * 2002-01-24 2003-01-13 Εκεφε "Δημοκριτος" Ινστιτουτο Μικροηλεκτρονικης Ολοκληρωμενοι θερμικοι αισθητηρες πυριτιου χαμηλης ισχυος και διαταξεις μικρο-ροης βασισμενοι στην χρηση τεχνολογιας κοιλοτητας αερα σφραγισμενης με μεμβρανη πορωδους πυριτιου ή τεχνολογιας μικρο-καναλιων
DE10210335A1 (de) * 2002-03-08 2003-10-02 Bosch Gmbh Robert Membransensor
KR100692593B1 (ko) * 2005-01-24 2007-03-13 삼성전자주식회사 Ｍｅｍｓ 구조체, 외팔보 형태의 ｍｅｍｓ 구조체 및밀봉된 유체채널의 제조 방법.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139624A (en) * 1990-12-06 1992-08-18 Sri International Method for making porous semiconductor membranes
DE19653097A1 (de) * 1996-12-20 1998-07-02 Forschungszentrum Juelich Gmbh Schicht mit porösem Schichtbereich, eine solche Schicht enthaltendes Interferenzfilter sowie Verfahren zu ihrer Herstellung

Also Published As

Publication number Publication date
WO1999045583A1 (en) 1999-09-10
NL1010234C1 (nl) 1999-09-03

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase