AU2010330718A1 - Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom - Google Patents

Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom Download PDF

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Publication number
AU2010330718A1
AU2010330718A1 AU2010330718A AU2010330718A AU2010330718A1 AU 2010330718 A1 AU2010330718 A1 AU 2010330718A1 AU 2010330718 A AU2010330718 A AU 2010330718A AU 2010330718 A AU2010330718 A AU 2010330718A AU 2010330718 A1 AU2010330718 A1 AU 2010330718A1
Authority
AU
Australia
Prior art keywords
precursor composition
copper
primary amine
thin film
cuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2010330718A
Other languages
English (en)
Inventor
Calvin J. Curtis
David S. Ginley
Jennifer Leisch
Alexander Miedaner
Billy J. Stanbery
Matthew Taylor
Marinus Franciscus Antonius Maria Van Hest
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HelioVolt Corp
National Renewable Energy Laboratory NREL
Original Assignee
HelioVolt Corp
National Renewable Energy Laboratory NREL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HelioVolt Corp, National Renewable Energy Laboratory NREL filed Critical HelioVolt Corp
Publication of AU2010330718A1 publication Critical patent/AU2010330718A1/en
Abandoned legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G3/00—Compounds of copper
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/04—Binary compounds including binary selenium-tellurium compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
AU2010330718A 2010-02-04 2010-02-04 Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom Abandoned AU2010330718A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2010/000311 WO2011096914A1 (en) 2010-02-04 2010-02-04 Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

Publications (1)

Publication Number Publication Date
AU2010330718A1 true AU2010330718A1 (en) 2011-08-18

Family

ID=44355687

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2010330718A Abandoned AU2010330718A1 (en) 2010-02-04 2010-02-04 Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

Country Status (6)

Country Link
EP (1) EP2531447A1 (ko)
KR (1) KR20120011859A (ko)
AU (1) AU2010330718A1 (ko)
CA (1) CA2748438A1 (ko)
SG (1) SG173552A1 (ko)
WO (1) WO2011096914A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
CN113224462B (zh) * 2021-04-24 2023-06-16 武汉理工大学 一种用于硫锂电池的插层材料及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9711799D0 (en) * 1997-06-07 1997-08-06 Vecht Aron Preparation of sulphides and selenides
US7494841B2 (en) * 2006-05-12 2009-02-24 International Business Machines Corporation Solution-based deposition process for metal chalcogenides
EP2944383A3 (en) * 2006-11-09 2016-02-10 Alliance for Sustainable Energy, LLC Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

Also Published As

Publication number Publication date
CA2748438A1 (en) 2011-08-04
EP2531447A1 (en) 2012-12-12
KR20120011859A (ko) 2012-02-08
SG173552A1 (en) 2011-09-29
WO2011096914A1 (en) 2011-08-11

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Legal Events

Date Code Title Description
MK4 Application lapsed section 142(2)(d) - no continuation fee paid for the application