AU2003211035A1 - A plasma processing apparatus and method - Google Patents

A plasma processing apparatus and method

Info

Publication number
AU2003211035A1
AU2003211035A1 AU2003211035A AU2003211035A AU2003211035A1 AU 2003211035 A1 AU2003211035 A1 AU 2003211035A1 AU 2003211035 A AU2003211035 A AU 2003211035A AU 2003211035 A AU2003211035 A AU 2003211035A AU 2003211035 A1 AU2003211035 A1 AU 2003211035A1
Authority
AU
Australia
Prior art keywords
processing apparatus
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003211035A
Other languages
English (en)
Inventor
Andreas Fischer
Bill Kennedy
Peter Loewenhardt
Dave Trussel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU2003211035A1 publication Critical patent/AU2003211035A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
AU2003211035A 2002-02-14 2003-02-14 A plasma processing apparatus and method Abandoned AU2003211035A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/077,072 US6744212B2 (en) 2002-02-14 2002-02-14 Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions
US10/077,072 2002-02-14
PCT/US2003/004407 WO2003068442A1 (fr) 2002-02-14 2003-02-14 Appareil et procede de traitement au plasma

Publications (1)

Publication Number Publication Date
AU2003211035A1 true AU2003211035A1 (en) 2003-09-04

Family

ID=27660267

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003211035A Abandoned AU2003211035A1 (en) 2002-02-14 2003-02-14 A plasma processing apparatus and method

Country Status (7)

Country Link
US (1) US6744212B2 (fr)
EP (1) EP1474264B1 (fr)
JP (1) JP4546735B2 (fr)
KR (1) KR100974845B1 (fr)
AU (1) AU2003211035A1 (fr)
TW (1) TWI303141B (fr)
WO (1) WO2003068442A1 (fr)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6926803B2 (en) * 2002-04-17 2005-08-09 Lam Research Corporation Confinement ring support assembly
US6936135B2 (en) * 2002-04-17 2005-08-30 Lam Research Corporation Twist-N-Lock wafer area pressure ring and assembly for reducing particulate contaminant in a plasma processing chamber
US20040118344A1 (en) * 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
US7144521B2 (en) * 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
US7988816B2 (en) 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
TWI574318B (zh) * 2004-06-21 2017-03-11 Tokyo Electron Ltd A plasma processing apparatus, a plasma processing method, and a computer-readable recording medium
JP5036143B2 (ja) * 2004-06-21 2012-09-26 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法、ならびにコンピュータ読み取り可能な記憶媒体
JP4672455B2 (ja) * 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体
US7951262B2 (en) 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
US7740737B2 (en) 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
KR20060005560A (ko) * 2004-07-13 2006-01-18 삼성전자주식회사 플라즈마를 이용하는 반도체 소자 제조 장비
US7845309B2 (en) * 2004-07-13 2010-12-07 Nordson Corporation Ultra high speed uniform plasma processing system
US20060043067A1 (en) * 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
US20060172542A1 (en) * 2005-01-28 2006-08-03 Applied Materials, Inc. Method and apparatus to confine plasma and to enhance flow conductance
US7837825B2 (en) * 2005-06-13 2010-11-23 Lam Research Corporation Confined plasma with adjustable electrode area ratio
KR100621778B1 (ko) * 2005-06-17 2006-09-11 삼성전자주식회사 플라즈마 처리 장치
US7713379B2 (en) * 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
JP4827081B2 (ja) * 2005-12-28 2011-11-30 東京エレクトロン株式会社 プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
US8012306B2 (en) * 2006-02-15 2011-09-06 Lam Research Corporation Plasma processing reactor with multiple capacitive and inductive power sources
US7578258B2 (en) * 2006-03-03 2009-08-25 Lam Research Corporation Methods and apparatus for selective pre-coating of a plasma processing chamber
US20070221332A1 (en) * 2006-03-22 2007-09-27 Tokyo Electron Limited Plasma processing apparatus
JP5031252B2 (ja) * 2006-03-30 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置
US7829468B2 (en) * 2006-06-07 2010-11-09 Lam Research Corporation Method and apparatus to detect fault conditions of plasma processing reactor
KR101346081B1 (ko) * 2006-06-20 2013-12-31 참엔지니어링(주) 플라스마 에칭 챔버
US7722778B2 (en) * 2006-06-28 2010-05-25 Lam Research Corporation Methods and apparatus for sensing unconfinement in a plasma processing chamber
US20080073032A1 (en) * 2006-08-10 2008-03-27 Akira Koshiishi Stage for plasma processing apparatus, and plasma processing apparatus
US8043430B2 (en) 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
US8262847B2 (en) 2006-12-29 2012-09-11 Lam Research Corporation Plasma-enhanced substrate processing method and apparatus
US8222156B2 (en) * 2006-12-29 2012-07-17 Lam Research Corporation Method and apparatus for processing a substrate using plasma
KR101262904B1 (ko) * 2007-02-06 2013-05-09 참엔지니어링(주) 플라즈마 식각 장치
JP5130761B2 (ja) * 2007-03-23 2013-01-30 東京エレクトロン株式会社 載置台構造及び処理装置
US7824519B2 (en) * 2007-05-18 2010-11-02 Lam Research Corporation Variable volume plasma processing chamber and associated methods
CN101889329B (zh) * 2007-10-31 2012-07-04 朗姆研究公司 长寿命可消耗氮化硅-二氧化硅等离子处理部件
JP5264231B2 (ja) * 2008-03-21 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
EP2317829B1 (fr) * 2008-08-11 2018-12-05 NGK Insulators, Ltd. Dispositif de reformage de gaz et son procédé de fonctionnement
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8313612B2 (en) * 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
CN101989525A (zh) * 2009-08-05 2011-03-23 中微半导体设备(上海)有限公司 具备可切换偏置频率的等离子体处理腔及可切换匹配网络
KR102285582B1 (ko) * 2009-08-31 2021-08-03 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
US8992722B2 (en) * 2009-09-01 2015-03-31 Lam Research Corporation Direct drive arrangement to control confinement rings positioning and methods thereof
US20120083129A1 (en) * 2010-10-05 2012-04-05 Skyworks Solutions, Inc. Apparatus and methods for focusing plasma
US9478428B2 (en) 2010-10-05 2016-10-25 Skyworks Solutions, Inc. Apparatus and methods for shielding a plasma etcher electrode
DE102010060762B4 (de) * 2010-11-24 2019-05-23 Meyer Burger (Germany) Gmbh Plasmabearbeitungsvorrichtung
WO2014097621A1 (fr) * 2012-12-21 2014-06-26 Asahi Glass Company Limited Paire d'électrodes pour permettre un traitement plasma de décharge à barrière diélectrique
US11605546B2 (en) 2015-01-16 2023-03-14 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10957561B2 (en) 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
KR102384273B1 (ko) * 2015-08-26 2022-04-19 주식회사 뉴파워 프라즈마 인시츄 클리닝이 가능한 플라즈마 클리닝링
CN106920724B (zh) * 2015-12-24 2019-05-03 中微半导体设备(上海)股份有限公司 改善刻蚀对称性的等离子处理装置及调节方法
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
JP6888007B2 (ja) 2016-01-26 2021-06-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウェハエッジリングの持ち上げに関する解決
WO2017131927A1 (fr) 2016-01-26 2017-08-03 Applied Materials, Inc. Solution de levage d'anneau de bordure de plaquette
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US11011353B2 (en) 2016-03-29 2021-05-18 Lam Research Corporation Systems and methods for performing edge ring characterization
US10312121B2 (en) 2016-03-29 2019-06-04 Lam Research Corporation Systems and methods for aligning measurement device in substrate processing systems
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
US9947517B1 (en) 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US10553404B2 (en) 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
US10790123B2 (en) 2018-05-28 2020-09-29 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
WO2020214327A1 (fr) 2019-04-19 2020-10-22 Applied Materials, Inc. Retrait d'anneau d'une chambre de traitement
US12009236B2 (en) 2019-04-22 2024-06-11 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0624186B2 (ja) * 1985-09-27 1994-03-30 株式会社日立製作所 ドライエツチング装置
JP2646261B2 (ja) * 1989-03-31 1997-08-27 東京エレクトロン株式会社 プラズマ処理装置
JP3210207B2 (ja) * 1994-04-20 2001-09-17 東京エレクトロン株式会社 プラズマ処理装置
US5951887A (en) * 1996-03-28 1999-09-14 Sumitomo Metal Industries, Ltd. Plasma processing apparatus and plasma processing method
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6403491B1 (en) * 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window

Also Published As

Publication number Publication date
EP1474264A4 (fr) 2008-08-13
JP2005526381A (ja) 2005-09-02
EP1474264A1 (fr) 2004-11-10
JP4546735B2 (ja) 2010-09-15
KR20040094690A (ko) 2004-11-10
TWI303141B (en) 2008-11-11
WO2003068442A1 (fr) 2003-08-21
KR100974845B1 (ko) 2010-08-11
US6744212B2 (en) 2004-06-01
TW200305354A (en) 2003-10-16
EP1474264B1 (fr) 2015-11-04
US20030151371A1 (en) 2003-08-14

Similar Documents

Publication Publication Date Title
AU2003211035A1 (en) A plasma processing apparatus and method
AU2003243016A1 (en) Plasma processing apparatus and plasma processing method
AU2003284605A1 (en) Plasma processing apparatus and plasma processing method
AU2003284683A1 (en) Plasma processing method and apparatus
AU2003284684A1 (en) Plasma processing apparatus and method
AU2003211351A1 (en) Plasma processing device and plasma processing method
AU2003235924A1 (en) Plasma processing equipment and plasma processing method
AU2003226071A1 (en) Method and apparatus for vhf plasma processing
AU2003284598A1 (en) Plasma processing apparatus and plasma processing method
AU2003255288A1 (en) A method and apparatus for deep packet processing
AU2003251945A1 (en) Plasma concentrating apparatus and method
AU2003244166A1 (en) Plasma processing method
AU2001279189A1 (en) Plasma processing method and apparatus
AU2003303169A1 (en) Apparatus and method for processing streams
AU2003294492A1 (en) Plasma processing system and method
AU2003252258A1 (en) Plasma processing device and controlling method therefor
EP1610368A4 (fr) Appareil et procede de traitement au plasma
AU2003261790A1 (en) Plasma processing method and plasma processing device
AU2003247165A1 (en) Laser processing method and laser processing apparatus
AU2003221340A1 (en) Plasma processing apparatus
AU2003222219A1 (en) Web processing method and apparatus
AU2003278885A1 (en) Plasma processing system and method
AU2003205849A1 (en) Plasma processing apparatus
AU2003286823A1 (en) Substrate processing apparatus and method
AU2003252470A1 (en) Plasma processing apparatus

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase