AU2002236430A1 - Atomic layer doping apparatus and method - Google Patents
Atomic layer doping apparatus and methodInfo
- Publication number
- AU2002236430A1 AU2002236430A1 AU2002236430A AU3643002A AU2002236430A1 AU 2002236430 A1 AU2002236430 A1 AU 2002236430A1 AU 2002236430 A AU2002236430 A AU 2002236430A AU 3643002 A AU3643002 A AU 3643002A AU 2002236430 A1 AU2002236430 A1 AU 2002236430A1
- Authority
- AU
- Australia
- Prior art keywords
- doping
- doping regions
- atomic layer
- doping apparatus
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
An improved atomic layer doping apparatus is disclosed as having multiple doping regions in which individual monolayer species are first deposited and then dopant atoms contained therein are diffused into the substrate. Each doping region is chemically separated from adjacent doping regions. A loading assembly is programmed to follow pre-defined transfer sequences for moving semiconductor substrates into and out of the respective adjacent doping regions. According to the number of doping regions provided, a plurality of substrates could be simultaneously processed and run through the cycle of doping regions until a desired doping profile is obtained.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/653,553 US6541353B1 (en) | 2000-08-31 | 2000-08-31 | Atomic layer doping apparatus and method |
US09/653,553 | 2000-08-31 | ||
PCT/US2001/026079 WO2002038841A2 (en) | 2000-08-31 | 2001-08-22 | Atomic layer doping apparatus and method |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002236430A1 true AU2002236430A1 (en) | 2002-05-21 |
Family
ID=24621343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002236430A Abandoned AU2002236430A1 (en) | 2000-08-31 | 2001-08-22 | Atomic layer doping apparatus and method |
Country Status (9)
Country | Link |
---|---|
US (3) | US6541353B1 (en) |
EP (1) | EP1335998B1 (en) |
JP (1) | JP2004513525A (en) |
KR (1) | KR100564977B1 (en) |
CN (1) | CN1267589C (en) |
AT (1) | ATE282101T1 (en) |
AU (1) | AU2002236430A1 (en) |
DE (1) | DE60107111T2 (en) |
WO (1) | WO2002038841A2 (en) |
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2000
- 2000-08-31 US US09/653,553 patent/US6541353B1/en not_active Expired - Lifetime
-
2001
- 2001-08-22 AT AT01985952T patent/ATE282101T1/en not_active IP Right Cessation
- 2001-08-22 CN CNB018166695A patent/CN1267589C/en not_active Expired - Fee Related
- 2001-08-22 DE DE60107111T patent/DE60107111T2/en not_active Expired - Lifetime
- 2001-08-22 EP EP01985952A patent/EP1335998B1/en not_active Expired - Lifetime
- 2001-08-22 JP JP2002541151A patent/JP2004513525A/en active Pending
- 2001-08-22 WO PCT/US2001/026079 patent/WO2002038841A2/en active IP Right Grant
- 2001-08-22 KR KR1020037003141A patent/KR100564977B1/en not_active IP Right Cessation
- 2001-08-22 AU AU2002236430A patent/AU2002236430A1/en not_active Abandoned
- 2001-10-22 US US09/982,954 patent/US20020046705A1/en not_active Abandoned
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2002
- 2002-11-22 US US10/301,573 patent/US6746934B2/en not_active Expired - Lifetime
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EP1335998B1 (en) | 2004-11-10 |
US6541353B1 (en) | 2003-04-01 |
DE60107111T2 (en) | 2005-10-20 |
US6746934B2 (en) | 2004-06-08 |
WO2002038841A3 (en) | 2003-05-01 |
JP2004513525A (en) | 2004-04-30 |
CN1267589C (en) | 2006-08-02 |
KR100564977B1 (en) | 2006-03-28 |
US20020046705A1 (en) | 2002-04-25 |
WO2002038841A2 (en) | 2002-05-16 |
CN1468329A (en) | 2004-01-14 |
ATE282101T1 (en) | 2004-11-15 |
DE60107111D1 (en) | 2004-12-16 |
EP1335998A2 (en) | 2003-08-20 |
KR20030064395A (en) | 2003-07-31 |
US20030073318A1 (en) | 2003-04-17 |
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