AU2002212189A1 - Method for depositing, in particular, crystalline layers, a gas inlet element, and device for carrying out said method - Google Patents

Method for depositing, in particular, crystalline layers, a gas inlet element, and device for carrying out said method

Info

Publication number
AU2002212189A1
AU2002212189A1 AU2002212189A AU1218902A AU2002212189A1 AU 2002212189 A1 AU2002212189 A1 AU 2002212189A1 AU 2002212189 A AU2002212189 A AU 2002212189A AU 1218902 A AU1218902 A AU 1218902A AU 2002212189 A1 AU2002212189 A1 AU 2002212189A1
Authority
AU
Australia
Prior art keywords
depositing
carrying
gas inlet
inlet element
crystalline layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002212189A
Inventor
Markus Reinhold
Gerd Strauch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2002212189A1 publication Critical patent/AU2002212189A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45576—Coaxial inlets for each gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2002212189A 2000-09-22 2001-08-31 Method for depositing, in particular, crystalline layers, a gas inlet element, and device for carrying out said method Abandoned AU2002212189A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE10047562 2000-09-22
DE10047562 2000-09-22
DE10064944 2000-12-23
DE10064944A DE10064944A1 (en) 2000-09-22 2000-12-23 Process for depositing crystalline layers in particular, gas inlet element and device for carrying out the process
PCT/EP2001/010078 WO2002027078A1 (en) 2000-09-22 2001-08-31 Method for depositing, in particular, crystalline layers, a gas inlet element, and device for carrying out said method

Publications (1)

Publication Number Publication Date
AU2002212189A1 true AU2002212189A1 (en) 2002-04-08

Family

ID=26007167

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002212189A Abandoned AU2002212189A1 (en) 2000-09-22 2001-08-31 Method for depositing, in particular, crystalline layers, a gas inlet element, and device for carrying out said method

Country Status (8)

Country Link
US (1) US6786973B2 (en)
EP (1) EP1325177B1 (en)
JP (1) JP4897184B2 (en)
KR (1) KR100827486B1 (en)
AU (1) AU2002212189A1 (en)
DE (2) DE10064944A1 (en)
TW (1) TW539761B (en)
WO (1) WO2002027078A1 (en)

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DE10043599A1 (en) * 2000-09-01 2002-03-14 Aixtron Ag Device for depositing, in particular, crystalline layers on one or more, in particular likewise, crystalline substrates
DE10043601A1 (en) * 2000-09-01 2002-03-14 Aixtron Ag Device and method for depositing, in particular, crystalline layers on, in particular, crystalline substrates
EP1322801B1 (en) * 2000-09-22 2010-01-06 Aixtron Ag Cvd-method and gas inlet mechanism for carrying out the method
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US7572337B2 (en) 2004-05-26 2009-08-11 Applied Materials, Inc. Blocker plate bypass to distribute gases in a chemical vapor deposition system
US7622005B2 (en) 2004-05-26 2009-11-24 Applied Materials, Inc. Uniformity control for low flow process and chamber to chamber matching
GB2415707A (en) * 2004-06-30 2006-01-04 Arima Optoelectronic Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm
US7510624B2 (en) * 2004-12-17 2009-03-31 Applied Materials, Inc. Self-cooling gas delivery apparatus under high vacuum for high density plasma applications
US7722719B2 (en) * 2005-03-07 2010-05-25 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
DE102005056320A1 (en) * 2005-11-25 2007-06-06 Aixtron Ag CVD reactor with a gas inlet member
US20070234956A1 (en) * 2006-04-05 2007-10-11 Dalton Jeremie J Method and apparatus for providing uniform gas delivery to a reactor
US7758698B2 (en) * 2006-11-28 2010-07-20 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US20080124944A1 (en) * 2006-11-28 2008-05-29 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US20080121177A1 (en) * 2006-11-28 2008-05-29 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US7740706B2 (en) * 2006-11-28 2010-06-22 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
KR101177983B1 (en) 2007-10-11 2012-08-29 발렌스 프로세스 이큅먼트, 인코포레이티드 Chemical vapor deposition reactor
US8187381B2 (en) * 2008-08-22 2012-05-29 Applied Materials, Inc. Process gas delivery for semiconductor process chamber
DE102008055582A1 (en) * 2008-12-23 2010-06-24 Aixtron Ag MOCVD reactor with cylindrical gas inlet member
JP5409413B2 (en) * 2010-01-26 2014-02-05 日本パイオニクス株式会社 III-nitride semiconductor vapor phase growth system
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US9388492B2 (en) 2011-12-27 2016-07-12 Asm America, Inc. Vapor flow control apparatus for atomic layer deposition
US20130171350A1 (en) * 2011-12-29 2013-07-04 Intermolecular Inc. High Throughput Processing Using Metal Organic Chemical Vapor Deposition
TWI473903B (en) 2013-02-23 2015-02-21 Hermes Epitek Corp Gas Injector and Cover Plate Assembly for Semiconductor Equipment
CN107690487B (en) * 2015-06-12 2021-03-09 应用材料公司 Injector for semiconductor epitaxial growth
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
KR102369676B1 (en) 2017-04-10 2022-03-04 삼성디스플레이 주식회사 Apparatus and method for manufacturing a display apparatus
US11492701B2 (en) 2019-03-19 2022-11-08 Asm Ip Holding B.V. Reactor manifolds
CN110129766B (en) * 2019-06-11 2021-06-11 广东先导稀材股份有限公司 Coating device and quartz boat surface coating system
KR20210048408A (en) 2019-10-22 2021-05-03 에이에스엠 아이피 홀딩 비.브이. Semiconductor deposition reactor manifolds
CN110917914B (en) * 2019-12-19 2022-09-16 北京北方华创微电子装备有限公司 Gas mixing device and semiconductor processing equipment
CN113249707A (en) * 2021-04-21 2021-08-13 拓荆科技股份有限公司 Thin film deposition device and thin film deposition method
CN114768578B (en) * 2022-05-20 2023-08-18 北京北方华创微电子装备有限公司 Gas mixing device and semiconductor process equipment
DE102023104548A1 (en) 2023-02-24 2024-08-29 Aixtron Se Gas inlet for a CVD reactor

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Also Published As

Publication number Publication date
KR20030036760A (en) 2003-05-09
DE50106593D1 (en) 2005-07-28
US20030180460A1 (en) 2003-09-25
EP1325177B1 (en) 2005-06-22
KR100827486B1 (en) 2008-05-06
WO2002027078A1 (en) 2002-04-04
US6786973B2 (en) 2004-09-07
JP4897184B2 (en) 2012-03-14
EP1325177A1 (en) 2003-07-09
JP2004529834A (en) 2004-09-30
DE10064944A1 (en) 2002-04-11
TW539761B (en) 2003-07-01

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