AU2003227632A1 - Method and device for depositing thin layers on a substrate in a height-adjustable process chamber - Google Patents

Method and device for depositing thin layers on a substrate in a height-adjustable process chamber

Info

Publication number
AU2003227632A1
AU2003227632A1 AU2003227632A AU2003227632A AU2003227632A1 AU 2003227632 A1 AU2003227632 A1 AU 2003227632A1 AU 2003227632 A AU2003227632 A AU 2003227632A AU 2003227632 A AU2003227632 A AU 2003227632A AU 2003227632 A1 AU2003227632 A1 AU 2003227632A1
Authority
AU
Australia
Prior art keywords
substrate
height
process chamber
thin layers
depositing thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003227632A
Other versions
AU2003227632A8 (en
Inventor
Holger Jurgensen
Gerhard Karl Strauch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2003227632A1 publication Critical patent/AU2003227632A1/en
Publication of AU2003227632A8 publication Critical patent/AU2003227632A8/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
AU2003227632A 2002-04-22 2003-04-16 Method and device for depositing thin layers on a substrate in a height-adjustable process chamber Abandoned AU2003227632A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10217806.2 2002-04-22
DE10217806A DE10217806A1 (en) 2002-04-22 2002-04-22 Method and device for depositing thin layers on a substrate in a higher adjustable process chamber
PCT/EP2003/003953 WO2003089684A2 (en) 2002-04-22 2003-04-16 Method and device for depositing thin layers on a substrate in a height-adjustable process chamber

Publications (2)

Publication Number Publication Date
AU2003227632A1 true AU2003227632A1 (en) 2003-11-03
AU2003227632A8 AU2003227632A8 (en) 2003-11-03

Family

ID=28685211

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003227632A Abandoned AU2003227632A1 (en) 2002-04-22 2003-04-16 Method and device for depositing thin layers on a substrate in a height-adjustable process chamber

Country Status (7)

Country Link
EP (1) EP1497481B1 (en)
JP (1) JP4664598B2 (en)
KR (1) KR101130416B1 (en)
AU (1) AU2003227632A1 (en)
DE (1) DE10217806A1 (en)
TW (1) TWI275660B (en)
WO (1) WO2003089684A2 (en)

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DE102004009772A1 (en) * 2004-02-28 2005-09-15 Aixtron Ag CVD reactor with process chamber height stabilization
KR100698404B1 (en) * 2005-06-24 2007-03-23 주식회사 유진테크 CVD apparatus which has rotation type Heater and the control method
US20070116872A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
KR101348174B1 (en) * 2005-12-08 2014-01-10 주성엔지니어링(주) Apparatus for aligning substrate and mask
DE102007009145A1 (en) * 2007-02-24 2008-08-28 Aixtron Ag Device for depositing crystalline layers optionally by means of MOCVD or HVPE
KR100930824B1 (en) * 2007-11-28 2009-12-10 주식회사 케이씨텍 Atomic layer deposition apparatus
JP5297661B2 (en) * 2008-02-26 2013-09-25 スタンレー電気株式会社 Vapor growth equipment
JP5067279B2 (en) * 2008-06-25 2012-11-07 東京エレクトロン株式会社 Processing equipment
DE102010016477A1 (en) * 2010-04-16 2011-10-20 Aixtron Ag A thermal treatment method comprising a heating step, a treatment step and a cooling step
DE102010016471A1 (en) 2010-04-16 2011-10-20 Aixtron Ag Apparatus and method for simultaneously depositing multiple semiconductor layers in multiple process chambers
CN103502508B (en) 2010-12-30 2016-04-27 维易科仪器公司 Use the wafer processing of loader expansion
DE102012101438B4 (en) 2012-02-23 2023-07-13 Aixtron Se Method for cleaning a process chamber of a CVD reactor
US10136472B2 (en) * 2012-08-07 2018-11-20 Plansee Se Terminal for mechanical support of a heating element
CN104233191A (en) * 2013-06-08 2014-12-24 北京北方微电子基地设备工艺研究中心有限责任公司 Heating chamber and plasma processing apparatus
DE102014106871A1 (en) 2014-05-15 2015-11-19 Aixtron Se Method and apparatus for depositing thin films on a substrate and a height adjustable process chamber
WO2016196105A1 (en) * 2015-06-05 2016-12-08 Applied Materials, Inc. Susceptor position and rotation apparatus and methods of use
CN109423630A (en) * 2017-09-04 2019-03-05 台湾积体电路制造股份有限公司 Lifting device, chemical vapor deposition unit and method
US10763154B2 (en) * 2018-08-28 2020-09-01 Applied Materials, Inc. Measurement of flatness of a susceptor of a display CVD chamber
CN112760616B (en) * 2020-12-22 2022-12-27 湖南顶立科技有限公司 Vapor deposition device
CN114686849B (en) * 2020-12-31 2023-12-01 拓荆科技股份有限公司 Apparatus and method for manufacturing semiconductor thin film
US11685996B2 (en) * 2021-03-05 2023-06-27 Sky Tech Inc. Atomic layer deposition device

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Publication number Priority date Publication date Assignee Title
DE4011933C2 (en) 1990-04-12 1996-11-21 Balzers Hochvakuum Process for the reactive surface treatment of a workpiece and treatment chamber therefor
US5148714A (en) * 1990-10-24 1992-09-22 Ag Processing Technology, Inc. Rotary/linear actuator for closed chamber, and reaction chamber utilizing same
US5324684A (en) 1992-02-25 1994-06-28 Ag Processing Technologies, Inc. Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure
US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
US5443647A (en) * 1993-04-28 1995-08-22 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for depositing a refractory thin film by chemical vapor deposition
JP3247270B2 (en) 1994-08-25 2002-01-15 東京エレクトロン株式会社 Processing apparatus and dry cleaning method
JP3360098B2 (en) 1995-04-20 2002-12-24 東京エレクトロン株式会社 Shower head structure of processing equipment
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
EP1063320B1 (en) 1998-02-18 2004-11-10 Nippon Steel Corporation Anticorrosive coating material and method of rust prevention
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
JP4487338B2 (en) * 1999-08-31 2010-06-23 東京エレクトロン株式会社 Film forming apparatus and film forming method
JP2001144088A (en) * 1999-11-17 2001-05-25 Hitachi Kokusai Electric Inc Method of manufacturing semiconductor
JP3723712B2 (en) * 2000-02-10 2005-12-07 株式会社日立国際電気 Substrate processing apparatus and substrate processing method
JP2002064064A (en) * 2000-08-21 2002-02-28 Hitachi Kokusai Electric Inc Plasma processing device
JP5079949B2 (en) * 2001-04-06 2012-11-21 東京エレクトロン株式会社 Processing apparatus and processing method

Also Published As

Publication number Publication date
WO2003089684A3 (en) 2004-04-01
AU2003227632A8 (en) 2003-11-03
JP2005523385A (en) 2005-08-04
KR101130416B1 (en) 2012-03-28
KR20050003360A (en) 2005-01-10
TW200413562A (en) 2004-08-01
EP1497481A2 (en) 2005-01-19
EP1497481B1 (en) 2015-06-17
TWI275660B (en) 2007-03-11
WO2003089684A2 (en) 2003-10-30
JP4664598B2 (en) 2011-04-06
DE10217806A1 (en) 2003-10-30

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase