AU2002210750A1 - Mechanism for prevention of neutron radiation in ion implanter beamline - Google Patents

Mechanism for prevention of neutron radiation in ion implanter beamline

Info

Publication number
AU2002210750A1
AU2002210750A1 AU2002210750A AU1075002A AU2002210750A1 AU 2002210750 A1 AU2002210750 A1 AU 2002210750A1 AU 2002210750 A AU2002210750 A AU 2002210750A AU 1075002 A AU1075002 A AU 1075002A AU 2002210750 A1 AU2002210750 A1 AU 2002210750A1
Authority
AU
Australia
Prior art keywords
prevention
ion implanter
neutron radiation
implanter beamline
beamline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002210750A
Other languages
English (en)
Inventor
Michael Anthony Graf
Edward Kirby Mcintyre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of AU2002210750A1 publication Critical patent/AU2002210750A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/028Particle traps

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Accelerators (AREA)
  • Electron Tubes For Measurement (AREA)
AU2002210750A 2000-11-01 2001-10-31 Mechanism for prevention of neutron radiation in ion implanter beamline Abandoned AU2002210750A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/703,769 US6608315B1 (en) 2000-11-01 2000-11-01 Mechanism for prevention of neutron radiation in ion implanter beamline
US09/703,769 2000-11-01
PCT/GB2001/004833 WO2002037905A2 (fr) 2000-11-01 2001-10-31 Mecanisme de prevention de rayonnements de neutrons dans la ligne de faisceau d'un implanteur ionique

Publications (1)

Publication Number Publication Date
AU2002210750A1 true AU2002210750A1 (en) 2002-05-15

Family

ID=24826701

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002210750A Abandoned AU2002210750A1 (en) 2000-11-01 2001-10-31 Mechanism for prevention of neutron radiation in ion implanter beamline

Country Status (7)

Country Link
US (1) US6608315B1 (fr)
EP (1) EP1332652A2 (fr)
JP (1) JP3896543B2 (fr)
KR (1) KR20030051762A (fr)
AU (1) AU2002210750A1 (fr)
TW (1) TW519669B (fr)
WO (1) WO2002037905A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7462845B2 (en) * 2005-12-09 2008-12-09 International Business Machines Corporation Removable liners for charged particle beam systems
JP5004072B2 (ja) * 2006-05-17 2012-08-22 学校法人慶應義塾 イオン照射効果評価方法、プロセスシミュレータ及びデバイスシミュレータ
JP4930778B2 (ja) * 2007-02-07 2012-05-16 株式会社Ihi 質量分離電磁石
EP2045819A1 (fr) * 2007-10-03 2009-04-08 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Matériau de construction translucide à neutron
CN106793445B (zh) * 2016-12-27 2018-08-14 中国科学院合肥物质科学研究院 一种离子束的传输系统
JP6785189B2 (ja) * 2017-05-31 2020-11-18 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオン注入方法
JP6785188B2 (ja) * 2017-05-31 2020-11-18 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオン注入方法
US10811214B2 (en) * 2019-01-18 2020-10-20 Applied Materials, Inc. Low emission cladding and ion implanter
US10866503B1 (en) * 2019-07-26 2020-12-15 Applied Materials, Inc. Low emission implantation mask and substrate assembly
JP6999007B2 (ja) * 2020-10-23 2022-01-18 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオンビーム被照射体

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4266132A (en) 1977-06-20 1981-05-05 Mdh Industries, Inc. Apparatus for controlling neutrons escaping from an elemental analyzer measuring gamma rays arising from neutron capture in bulk substances
US4560879A (en) * 1983-09-16 1985-12-24 Rca Corporation Method and apparatus for implantation of doubly-charged ions
EP0405855A3 (en) * 1989-06-30 1991-10-16 Hitachi, Ltd. Ion implanting apparatus and process for fabricating semiconductor integrated circuit device by using the same apparatus
US5118936A (en) * 1991-05-06 1992-06-02 High Voltage Engineeering Europa B.V. Accuracy of AMS isotopic ratio measurements
US5334847A (en) 1993-02-08 1994-08-02 The United States Of America As Represented By The Department Of Energy Composition for radiation shielding
US5494753A (en) * 1994-06-20 1996-02-27 General Electric Company Articles having thermal conductors of graphite
US5786611A (en) 1995-01-23 1998-07-28 Lockheed Idaho Technologies Company Radiation shielding composition
US5629528A (en) * 1996-01-16 1997-05-13 Varian Associates, Inc. Charged particle beam system having beam-defining slit formed by rotating cyclinders
JP2792495B2 (ja) * 1996-01-19 1998-09-03 日本電気株式会社 質量分析装置
US5689112A (en) * 1996-04-12 1997-11-18 Enge; Harald A. Apparatus for detection of surface contaminations on silicon wafers
US5760409A (en) * 1996-06-14 1998-06-02 Eaton Corporation Dose control for use in an ion implanter
JP3139378B2 (ja) * 1996-07-03 2001-02-26 株式会社日立製作所 イオン注入装置
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
US5780863A (en) 1997-04-29 1998-07-14 Eaton Corporation Accelerator-decelerator electrostatic lens for variably focusing and mass resolving an ion beam in an ion implanter
US5947053A (en) * 1998-01-09 1999-09-07 International Business Machines Corporation Wear-through detector for multilayered parts and methods of using same
US6130436A (en) * 1998-06-02 2000-10-10 Varian Semiconductor Equipment Associates, Inc. Acceleration and analysis architecture for ion implanter
US6262638B1 (en) * 1998-09-28 2001-07-17 Axcelis Technologies, Inc. Tunable and matchable resonator coil assembly for ion implanter linear accelerator
US6208095B1 (en) * 1998-12-23 2001-03-27 Axcelis Technologies, Inc. Compact helical resonator coil for ion implanter linear accelerator

Also Published As

Publication number Publication date
WO2002037905A2 (fr) 2002-05-10
WO2002037905A3 (fr) 2002-08-01
EP1332652A2 (fr) 2003-08-06
JP3896543B2 (ja) 2007-03-22
KR20030051762A (ko) 2003-06-25
US6608315B1 (en) 2003-08-19
TW519669B (en) 2003-02-01
JP2004513495A (ja) 2004-04-30

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