AU2001275407A1 - Cmos devices hardened against total dose radiation effects - Google Patents

Cmos devices hardened against total dose radiation effects

Info

Publication number
AU2001275407A1
AU2001275407A1 AU2001275407A AU7540701A AU2001275407A1 AU 2001275407 A1 AU2001275407 A1 AU 2001275407A1 AU 2001275407 A AU2001275407 A AU 2001275407A AU 7540701 A AU7540701 A AU 7540701A AU 2001275407 A1 AU2001275407 A1 AU 2001275407A1
Authority
AU
Australia
Prior art keywords
total dose
cmos devices
dose radiation
radiation effects
against total
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001275407A
Inventor
Eric Jackson
Geoffrey Summers
Michael Xapsos
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Navy
Original Assignee
US Department of Navy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Department of Navy filed Critical US Department of Navy
Publication of AU2001275407A1 publication Critical patent/AU2001275407A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
AU2001275407A 2000-07-12 2001-06-07 Cmos devices hardened against total dose radiation effects Abandoned AU2001275407A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/614,682 US6777753B1 (en) 2000-07-12 2000-07-12 CMOS devices hardened against total dose radiation effects
US09614682 2000-07-12
PCT/US2001/018609 WO2002005348A1 (en) 2000-07-12 2001-06-07 Cmos devices hardened against total dose radiation effects

Publications (1)

Publication Number Publication Date
AU2001275407A1 true AU2001275407A1 (en) 2002-01-21

Family

ID=24462299

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001275407A Abandoned AU2001275407A1 (en) 2000-07-12 2001-06-07 Cmos devices hardened against total dose radiation effects

Country Status (3)

Country Link
US (1) US6777753B1 (en)
AU (1) AU2001275407A1 (en)
WO (1) WO2002005348A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7518218B2 (en) * 2005-03-03 2009-04-14 Aeroflex Colorado Springs, Inc. Total ionizing dose suppression transistor architecture
EP1974445B1 (en) * 2005-09-08 2014-03-19 Steven E. Summer Radiation tolerant dc/dc converter with non-radiation hardened parts
US7589308B2 (en) * 2006-09-01 2009-09-15 Honeywell International Inc. Method and apparatus for regulating photo currents induced by dose rate events
US7649216B1 (en) 2007-05-08 2010-01-19 Arizona Board Of Regents For And On Behalf Of Arizona State University Total ionizing dose radiation hardening using reverse body bias techniques
US7804354B2 (en) * 2007-10-24 2010-09-28 Honeywell International Inc. Circuit architecture for radiation resilience
JP7108386B2 (en) * 2017-08-24 2022-07-28 住友化学株式会社 Charge trap evaluation method
WO2020010143A1 (en) 2018-07-03 2020-01-09 Novartis Inflammasome Research, Inc. Nlrp modulators
CN111008506B (en) * 2019-11-30 2023-04-07 中国科学院新疆理化技术研究所 6-T storage unit total dose resistance reinforcing method based on threshold voltage type matching
CN113341761B (en) * 2021-05-20 2024-04-05 西安电子科技大学 Modeling method and system for total dose effect of CMOS digital integrated circuit

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US4460835A (en) * 1980-05-13 1984-07-17 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator
US4506436A (en) 1981-12-21 1985-03-26 International Business Machines Corporation Method for increasing the radiation resistance of charge storage semiconductor devices
US4670670A (en) 1984-10-05 1987-06-02 American Telephone And Telegraph Company At&T Bell Laboratories Circuit arrangement for controlling threshold voltages in CMOS circuits
US5289027A (en) * 1988-12-09 1994-02-22 Hughes Aircraft Company Ultrathin submicron MOSFET with intrinsic channel
US5103277A (en) 1989-09-11 1992-04-07 Allied-Signal Inc. Radiation hard CMOS circuits in silicon-on-insulator films
US5289025A (en) * 1991-10-24 1994-02-22 At&T Bell Laboratories Integrated circuit having a boosted node
GB9122843D0 (en) 1991-10-28 1991-12-11 Imperial College Method and apparatus for image processing
DE4209314C1 (en) 1992-03-23 1993-02-11 Fagus-Grecon Greten Gmbh & Co Kg, 3220 Alfeld, De
US5501011A (en) 1992-05-18 1996-03-26 Societe Europeenne De Propulsion Method of manufacture of an enclosure containing hot gases cooled by transportation, in particular the thrust chamber of a rocket engine
US5325054A (en) * 1992-07-07 1994-06-28 Texas Instruments Incorporated Method and system for screening reliability of semiconductor circuits
CA2124687A1 (en) * 1992-10-15 1994-04-28 Frank M. Wanlass Electrical isolation in integrated circuits
FR2717918B1 (en) 1994-03-25 1996-05-24 Suisse Electronique Microtech Circuit to control the voltages between box and sources of mos transistors and servo system of the relationship between the dynamic and static currents of a mos logic circuit.
US5636133A (en) 1995-05-19 1997-06-03 International Business Machines Corporation Efficient generation of fill shapes for chips and packages
US5850090A (en) * 1995-05-24 1998-12-15 Mitsubishi Denki Kabushiki Kaisha Dynamic semiconductor memory device on SOI substrate
US5649169A (en) 1995-06-20 1997-07-15 Advanced Micro Devices, Inc. Method and system for declustering semiconductor defect data
KR100213201B1 (en) * 1996-05-15 1999-08-02 윤종용 Cmos transistor and manufacturing method thereof
US5870312A (en) 1996-06-28 1999-02-09 Lsi Logic Corporation Advanced modular cell placement system with dispersion-driven levelizing system
US5767549A (en) * 1996-07-03 1998-06-16 International Business Machines Corporation SOI CMOS structure
US6121651A (en) * 1998-07-30 2000-09-19 International Business Machines Corporation Dram cell with three-sided-gate transfer device
US6583470B1 (en) * 1999-03-09 2003-06-24 Science & Technology Corporation @ Unm Radiation tolerant back biased CMOS VLSI

Also Published As

Publication number Publication date
US6777753B1 (en) 2004-08-17
WO2002005348A1 (en) 2002-01-17

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