AU2001293225A1 - Apparatus and method for flow of process gas in an ultra-clean environment - Google Patents

Apparatus and method for flow of process gas in an ultra-clean environment

Info

Publication number
AU2001293225A1
AU2001293225A1 AU2001293225A AU9322501A AU2001293225A1 AU 2001293225 A1 AU2001293225 A1 AU 2001293225A1 AU 2001293225 A AU2001293225 A AU 2001293225A AU 9322501 A AU9322501 A AU 9322501A AU 2001293225 A1 AU2001293225 A1 AU 2001293225A1
Authority
AU
Australia
Prior art keywords
ultra
flow
process gas
clean environment
clean
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001293225A
Inventor
Douglas B. Macdonald
Niles K. Macdonald
Satyadev Patel
Gregory P. Schaadt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Reflectivity Inc
Original Assignee
Reflectivity Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Reflectivity Inc filed Critical Reflectivity Inc
Publication of AU2001293225A1 publication Critical patent/AU2001293225A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00563—Avoid or control over-etching
    • B81C1/00587—Processes for avoiding or controlling over-etching not provided for in B81C1/00571 - B81C1/00579
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
    • B81C99/0025—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems not provided for in B81C99/001 - B81C99/002
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/0138—Monitoring physical parameters in the etching chamber, e.g. pressure, temperature or gas composition
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C03C2218/328—Partly or completely removing a coating
    • C03C2218/33—Partly or completely removing a coating by etching
AU2001293225A 2000-08-28 2001-08-28 Apparatus and method for flow of process gas in an ultra-clean environment Abandoned AU2001293225A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09649569 2000-08-28
US09/649,569 US6949202B1 (en) 1999-10-26 2000-08-28 Apparatus and method for flow of process gas in an ultra-clean environment
PCT/US2001/041913 WO2002019391A2 (en) 2000-08-28 2001-08-28 Apparatus and method for floe of process gas in an ultra-clean environment

Publications (1)

Publication Number Publication Date
AU2001293225A1 true AU2001293225A1 (en) 2002-03-13

Family

ID=24605363

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001293225A Abandoned AU2001293225A1 (en) 2000-08-28 2001-08-28 Apparatus and method for flow of process gas in an ultra-clean environment

Country Status (6)

Country Link
US (1) US6949202B1 (en)
EP (1) EP1313896A4 (en)
JP (1) JP2004518271A (en)
KR (1) KR20040017792A (en)
AU (1) AU2001293225A1 (en)
WO (1) WO2002019391A2 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1263674C (en) * 2001-03-29 2006-07-12 株式会社丰田中央研究所 Production device and production method for silicon-based structure
US7411717B2 (en) * 2003-02-12 2008-08-12 Texas Instruments Incorporated Micromirror device
US20060065622A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and system for xenon fluoride etching with enhanced efficiency
GB0500980D0 (en) * 2005-01-18 2005-02-23 Point 35 Microstructures Ltd Improved method and apparatus for monitoring a microstructure etching process
US7422983B2 (en) * 2005-02-24 2008-09-09 International Business Machines Corporation Ta-TaN selective removal process for integrated device fabrication
US7638435B2 (en) * 2005-08-23 2009-12-29 Xactix, Inc. Pulsed etching cooling
US7566664B2 (en) * 2006-08-02 2009-07-28 Qualcomm Mems Technologies, Inc. Selective etching of MEMS using gaseous halides and reactive co-etchants
EP2104948A2 (en) * 2007-02-20 2009-09-30 Qualcomm Mems Technologies, Inc. Equipment and methods for etching of mems
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
EP2181355A1 (en) 2007-07-25 2010-05-05 Qualcomm Mems Technologies, Inc. Mems display devices and methods of fabricating the same
WO2009028114A1 (en) * 2007-08-31 2009-03-05 Ulvac, Inc. Etching system
WO2009036215A2 (en) * 2007-09-14 2009-03-19 Qualcomm Mems Technologies, Inc. Etching processes used in mems production
JP2009099581A (en) * 2007-10-12 2009-05-07 Ulvac Japan Ltd Etching device, and method of manufacturing non-defective layer substrate
JP2009149959A (en) * 2007-12-21 2009-07-09 Ulvac Japan Ltd Etching system, and etching method
US8023191B2 (en) * 2008-05-07 2011-09-20 Qualcomm Mems Technologies, Inc. Printable static interferometric images
EP2144026B1 (en) * 2008-06-20 2016-04-13 Volker Probst Processing device and method for processing stacked goods
AU2009319350B2 (en) 2008-11-28 2015-10-29 Volker Probst Method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulfur, in particular flat substrates
GB2473851C (en) * 2009-09-25 2013-08-21 Memsstar Ltd Improved selectivity in a xenon difluoride etch process
US8790464B2 (en) * 2010-01-19 2014-07-29 Mks Instruments, Inc. Control for and method of pulsed gas delivery
JP5436706B2 (en) * 2012-03-12 2014-03-05 キヤノン株式会社 Measuring device
JP6032033B2 (en) * 2013-02-01 2016-11-24 セントラル硝子株式会社 Silicon dry etching method
JP6201496B2 (en) * 2013-08-02 2017-09-27 セントラル硝子株式会社 IF7-derived iodine fluoride compound recovery method and recovery device
WO2019215177A1 (en) * 2018-05-07 2019-11-14 Behr-Hella Thermocontrol Gmbh Operating device for a vehicle

Family Cites Families (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3479680A (en) 1967-05-08 1969-11-25 Stewart Warner Corp Caster seal
JPS52139372A (en) * 1976-05-17 1977-11-21 Hitachi Ltd Selective etching method of thin films
JPS6012625B2 (en) 1977-10-05 1985-04-02 富士写真フイルム株式会社 Diffusion transfer photographic material with carboxylic acid polymer layer
US4310380A (en) 1980-04-07 1982-01-12 Bell Telephone Laboratories, Incorporated Plasma etching of silicon
JPS5798679A (en) 1980-12-11 1982-06-18 Toshiba Corp Dry etching device
JPS58130529A (en) 1982-01-29 1983-08-04 Hitachi Ltd Semiconductor etching method
JPS58145612A (en) * 1982-02-19 1983-08-30 Olympus Optical Co Ltd Apparatus for preparation of high purity silicon halide
US4431477A (en) * 1983-07-05 1984-02-14 Matheson Gas Products, Inc. Plasma etching with nitrous oxide and fluoro compound gas mixture
US4498953A (en) 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
JPS6057938A (en) 1983-09-09 1985-04-03 Nec Corp Formation of microfine pattern
US4551197A (en) * 1984-07-26 1985-11-05 Guilmette Joseph G Method and apparatus for the recovery and recycling of condensable gas reactants
JPS6153732A (en) 1984-08-23 1986-03-17 Daikin Ind Ltd Etching method of silicon oxide film by irradiation of light
US4891087A (en) * 1984-10-22 1990-01-02 Texas Instruments Incorporated Isolation substrate ring for plasma reactor
US4695700A (en) 1984-10-22 1987-09-22 Texas Instruments Incorporated Dual detector system for determining endpoint of plasma etch process
JPS61134019A (en) 1984-12-05 1986-06-21 Nec Corp Formation of pattern
JPS61181131A (en) 1985-02-07 1986-08-13 Nec Corp Etching method by molecular flow
JPH0626208B2 (en) 1985-02-14 1994-04-06 株式会社東芝 Dry etching method
JPS61270830A (en) 1985-05-24 1986-12-01 Nec Corp Surface cleaning method
US4749440A (en) 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
JPS6271217A (en) 1985-09-24 1987-04-01 Nec Corp Manufacture of semiconductor thin film
US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
JPS63155713A (en) 1986-12-19 1988-06-28 Hitachi Ltd Manufacture of semiconductor fine structure
US4789426A (en) 1987-01-06 1988-12-06 Harris Corp. Process for performing variable selectivity polysilicon etch
US4740410A (en) 1987-05-28 1988-04-26 The Regents Of The University Of California Micromechanical elements and methods for their fabrication
JPH0628253B2 (en) 1988-02-17 1994-04-13 工業技術院長 Etching method
JP2753707B2 (en) 1988-02-26 1998-05-20 日本電信電話株式会社 Etching method
JPH02250323A (en) 1989-03-24 1990-10-08 Hitachi Ltd Method and apparatus for etching
JPH0312921A (en) 1989-06-12 1991-01-21 Toshiba Corp Method and apparatus for etching
JPH03179184A (en) * 1989-12-05 1991-08-05 Nippon Pillar Packing Co Ltd Reciprocating pump
GB9006471D0 (en) 1990-03-22 1990-05-23 Surface Tech Sys Ltd Loading mechanisms
JPH0496222A (en) 1990-08-03 1992-03-27 Fujitsu Ltd Manufacture of semiconductor device
US5206471A (en) 1991-12-26 1993-04-27 Applied Science And Technology, Inc. Microwave activated gas generator
JPH0729823A (en) 1993-06-25 1995-01-31 Nec Corp Fabrication of semiconductor device
CA2191445A1 (en) * 1994-03-03 1995-09-08 John M. Simmons Pneumatically shifted reciprocating pump
US5439553A (en) 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
US5534107A (en) 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films
JPH0864559A (en) 1994-06-14 1996-03-08 Fsi Internatl Inc Method of deleting unnecessary substance from substrate surface
US5635102A (en) 1994-09-28 1997-06-03 Fsi International Highly selective silicon oxide etching method
US5726480A (en) 1995-01-27 1998-03-10 The Regents Of The University Of California Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
US5757456A (en) 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
US5835256A (en) 1995-06-19 1998-11-10 Reflectivity, Inc. Reflective spatial light modulator with encapsulated micro-mechanical elements
US5858065A (en) 1995-07-17 1999-01-12 American Air Liquide Process and system for separation and recovery of perfluorocompound gases
US5672242A (en) 1996-01-31 1997-09-30 Integrated Device Technology, Inc. High selectivity nitride to oxide etch process
US5753073A (en) 1996-01-31 1998-05-19 Integrated Device Technology, Inc. High selectivity nitride to oxide etch process
JPH09251981A (en) 1996-03-14 1997-09-22 Toshiba Corp Semiconductor manufacturing equipment
GB9616221D0 (en) 1996-08-01 1996-09-11 Surface Tech Sys Ltd A method of etch depth control in sintered workpieces
EP1357584A3 (en) 1996-08-01 2005-01-12 Surface Technology Systems Plc Method of surface treatment of semiconductor substrates
GB9616225D0 (en) 1996-08-01 1996-09-11 Surface Tech Sys Ltd Method of surface treatment of semiconductor substrates
DE69736081T2 (en) 1996-09-27 2007-01-11 Surface Technoloy Systems Plc Plasma processing apparatus
GB9620151D0 (en) 1996-09-27 1996-11-13 Surface Tech Sys Ltd Plasma processing apparatus
WO1998032163A1 (en) 1997-01-22 1998-07-23 California Institute Of Technology Gas phase silicon etching with bromine trifluoride
AU6172598A (en) 1997-02-20 1998-09-09 Thomas J. Manning Apparatus and method for generating ozone
JP3493951B2 (en) 1997-05-13 2004-02-03 松下電器産業株式会社 Silicon substrate anisotropic etching method and solar cell manufacturing method
GB9709659D0 (en) 1997-05-13 1997-07-02 Surface Tech Sys Ltd Method and apparatus for etching a workpiece
GB9714142D0 (en) 1997-07-05 1997-09-10 Surface Tech Sys Ltd An arrangement for the feeding of RF power to one or more antennae
GB9714341D0 (en) 1997-07-09 1997-09-10 Surface Tech Sys Ltd Plasma processing apparatus
US6328801B1 (en) 1997-07-25 2001-12-11 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method and system for recovering and recirculating a deuterium-containing gas
JP3643474B2 (en) 1998-01-30 2005-04-27 株式会社東芝 Semiconductor processing system and method of using semiconductor processing system
GB9904925D0 (en) 1999-03-04 1999-04-28 Surface Tech Sys Ltd Gas delivery system
WO1999049506A1 (en) 1998-03-20 1999-09-30 Surface Technology Systems Limited Method and apparatus for manufacturing a micromechanical device
US6159385A (en) 1998-05-08 2000-12-12 Rockwell Technologies, Llc Process for manufacture of micro electromechanical devices having high electrical isolation
JP2000009037A (en) 1998-06-18 2000-01-11 Fujitsu Ltd Exhaust device and exhaust method
US6290864B1 (en) 1999-10-26 2001-09-18 Reflectivity, Inc. Fluoride gas etching of silicon with improved selectivity
US6887337B2 (en) 2000-09-19 2005-05-03 Xactix, Inc. Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto

Also Published As

Publication number Publication date
EP1313896A4 (en) 2006-02-15
EP1313896A2 (en) 2003-05-28
WO2002019391A3 (en) 2002-06-13
WO2002019391A2 (en) 2002-03-07
US6949202B1 (en) 2005-09-27
JP2004518271A (en) 2004-06-17
KR20040017792A (en) 2004-02-27

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