JPS6271217A - Manufacture of semiconductor thin film - Google Patents

Manufacture of semiconductor thin film

Info

Publication number
JPS6271217A
JPS6271217A JP21153085A JP21153085A JPS6271217A JP S6271217 A JPS6271217 A JP S6271217A JP 21153085 A JP21153085 A JP 21153085A JP 21153085 A JP21153085 A JP 21153085A JP S6271217 A JPS6271217 A JP S6271217A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
layer
molecular
transient
xef
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21153085A
Inventor
Hisaaki Aizaki
Toru Tatsumi
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To abruptly form a profile of impurity by forming the first layer film, then removing by etching the first layer film surface by XeF2 molecular beam, and subsequently growing the second layer film.
CONSTITUTION: After the first layer film is formed, the second layer film is subsequently grown, a transient region which contains transient impurity from the surface of the first film is formed, the film growth is then stopped, the transient region is then removed by etching by XeF2 molecular beam, and then the second layer film is again grown. After the first layer film is formed, the first layer film surface is removed by etching with XeF2 molecular beam, and the second layer film is then grown. Thus, a thin film which has an abrupt profile of impurity is obtained.
COPYRIGHT: (C)1987,JPO&Japio
JP21153085A 1985-09-24 1985-09-24 Manufacture of semiconductor thin film Pending JPS6271217A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21153085A JPS6271217A (en) 1985-09-24 1985-09-24 Manufacture of semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21153085A JPS6271217A (en) 1985-09-24 1985-09-24 Manufacture of semiconductor thin film

Publications (1)

Publication Number Publication Date
JPS6271217A true true JPS6271217A (en) 1987-04-01

Family

ID=16607403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21153085A Pending JPS6271217A (en) 1985-09-24 1985-09-24 Manufacture of semiconductor thin film

Country Status (1)

Country Link
JP (1) JPS6271217A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849471B2 (en) 2003-03-28 2005-02-01 Reflectivity, Inc. Barrier layers for microelectromechanical systems
US6913942B2 (en) 2003-03-28 2005-07-05 Reflectvity, Inc Sacrificial layers for use in fabrications of microelectromechanical devices
US6942811B2 (en) 1999-10-26 2005-09-13 Reflectivity, Inc Method for achieving improved selectivity in an etching process
US6949202B1 (en) 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
US6960305B2 (en) 1999-10-26 2005-11-01 Reflectivity, Inc Methods for forming and releasing microelectromechanical structures
US6965468B2 (en) 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US6980347B2 (en) 2003-07-03 2005-12-27 Reflectivity, Inc Micromirror having reduced space between hinge and mirror plate of the micromirror
US7019376B2 (en) 2000-08-11 2006-03-28 Reflectivity, Inc Micromirror array device with a small pitch size
US7027200B2 (en) 2002-03-22 2006-04-11 Reflectivity, Inc Etching method used in fabrications of microstructures
US7041224B2 (en) 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US7189332B2 (en) 2001-09-17 2007-03-13 Texas Instruments Incorporated Apparatus and method for detecting an endpoint in a vapor phase etch
US7645704B2 (en) 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6942811B2 (en) 1999-10-26 2005-09-13 Reflectivity, Inc Method for achieving improved selectivity in an etching process
US6949202B1 (en) 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
US6960305B2 (en) 1999-10-26 2005-11-01 Reflectivity, Inc Methods for forming and releasing microelectromechanical structures
US7041224B2 (en) 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US7019376B2 (en) 2000-08-11 2006-03-28 Reflectivity, Inc Micromirror array device with a small pitch size
US7189332B2 (en) 2001-09-17 2007-03-13 Texas Instruments Incorporated Apparatus and method for detecting an endpoint in a vapor phase etch
US7027200B2 (en) 2002-03-22 2006-04-11 Reflectivity, Inc Etching method used in fabrications of microstructures
US6913942B2 (en) 2003-03-28 2005-07-05 Reflectvity, Inc Sacrificial layers for use in fabrications of microelectromechanical devices
US6849471B2 (en) 2003-03-28 2005-02-01 Reflectivity, Inc. Barrier layers for microelectromechanical systems
US7153443B2 (en) 2003-03-28 2006-12-26 Texas Instruments Incorporated Microelectromechanical structure and a method for making the same
US6980347B2 (en) 2003-07-03 2005-12-27 Reflectivity, Inc Micromirror having reduced space between hinge and mirror plate of the micromirror
US6970281B2 (en) 2003-07-03 2005-11-29 Reflectivity, Inc. Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US6965468B2 (en) 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US7002726B2 (en) 2003-07-24 2006-02-21 Reflectivity, Inc. Micromirror having reduced space between hinge and mirror plate of the micromirror
US6972891B2 (en) 2003-07-24 2005-12-06 Reflectivity, Inc Micromirror having reduced space between hinge and mirror plate of the micromirror
US7645704B2 (en) 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures

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