AU2001292110A1 - Method to detect surface metal contamination - Google Patents
Method to detect surface metal contaminationInfo
- Publication number
- AU2001292110A1 AU2001292110A1 AU2001292110A AU9211001A AU2001292110A1 AU 2001292110 A1 AU2001292110 A1 AU 2001292110A1 AU 2001292110 A AU2001292110 A AU 2001292110A AU 9211001 A AU9211001 A AU 9211001A AU 2001292110 A1 AU2001292110 A1 AU 2001292110A1
- Authority
- AU
- Australia
- Prior art keywords
- surface metal
- metal contamination
- detect surface
- detect
- contamination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6489—Photoluminescence of semiconductors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
Landscapes
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0024537A GB0024537D0 (en) | 2000-10-06 | 2000-10-06 | Detection method |
GB0024537 | 2000-10-06 | ||
GB0028222A GB0028222D0 (en) | 2000-11-18 | 2000-11-18 | Detection method |
GB0028222 | 2000-11-18 | ||
PCT/GB2001/004454 WO2002029883A1 (en) | 2000-10-06 | 2001-10-05 | Method to detect surface metal contamination |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001292110A1 true AU2001292110A1 (en) | 2002-04-15 |
Family
ID=26245117
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001292110A Abandoned AU2001292110A1 (en) | 2000-10-06 | 2001-10-05 | Method to detect surface metal contamination |
Country Status (8)
Country | Link |
---|---|
US (1) | US6911347B2 (zh) |
EP (1) | EP1323188A1 (zh) |
JP (1) | JP2004511104A (zh) |
KR (1) | KR100612399B1 (zh) |
CN (1) | CN1233030C (zh) |
AU (1) | AU2001292110A1 (zh) |
IL (2) | IL155021A0 (zh) |
WO (1) | WO2002029883A1 (zh) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9618897D0 (en) * | 1996-09-10 | 1996-10-23 | Bio Rad Micromeasurements Ltd | Micro defects in silicon wafers |
JP2003045928A (ja) * | 2001-07-31 | 2003-02-14 | Shin Etsu Handotai Co Ltd | 半導体シリコンウェーハ中のCu汚染評価方法 |
US7619735B2 (en) * | 2002-01-15 | 2009-11-17 | Applied Materials, Israel, Ltd. | Optical inspection using variable apodization |
JP3729154B2 (ja) * | 2002-05-10 | 2005-12-21 | 株式会社日立製作所 | パターン欠陥検査方法及びその装置 |
GB0216620D0 (en) * | 2002-07-17 | 2002-08-28 | Aoti Operating Co Inc | Detection method and apparatus |
GB0308182D0 (en) * | 2003-04-09 | 2003-05-14 | Aoti Operating Co Inc | Detection method and apparatus |
CN100552888C (zh) * | 2003-10-27 | 2009-10-21 | 住友电气工业株式会社 | 氮化镓半导体衬底及其制造方法 |
US7362448B1 (en) | 2004-09-08 | 2008-04-22 | Nanometrics Incorporated | Characterizing residue on a sample |
US7400390B2 (en) * | 2004-11-29 | 2008-07-15 | Applied Materials, Israel, Ltd. | Inspection system and a method for aerial reticle inspection |
US20070000434A1 (en) * | 2005-06-30 | 2007-01-04 | Accent Optical Technologies, Inc. | Apparatuses and methods for detecting defects in semiconductor workpieces |
TWI439684B (zh) | 2005-07-06 | 2014-06-01 | Nanometrics Inc | 具自晶圓或其他工件特定材料層所發射光致發光信號優先偵測之光致發光成像 |
TWI391645B (zh) | 2005-07-06 | 2013-04-01 | Nanometrics Inc | 晶圓或其他工作表面下污染物及缺陷非接觸測量之差分波長光致發光 |
US20070008526A1 (en) * | 2005-07-08 | 2007-01-11 | Andrzej Buczkowski | Apparatus and method for non-contact assessment of a constituent in semiconductor workpieces |
EP1946079B1 (en) * | 2005-10-11 | 2017-12-06 | BT Imaging Pty Limited | Method and system for inspecting indirect bandgap semiconductor structure |
JP5219334B2 (ja) * | 2005-11-30 | 2013-06-26 | 株式会社Sumco | 半導体基板の製造方法および品質評価方法 |
US20070176119A1 (en) * | 2006-01-30 | 2007-08-02 | Accent Optical Technologies, Inc. | Apparatuses and methods for analyzing semiconductor workpieces |
US7517706B2 (en) * | 2006-07-21 | 2009-04-14 | Sumco Corporation | Method for evaluating quality of semiconductor substrate and method for manufacturing semiconductor substrate |
TWI609177B (zh) * | 2008-03-31 | 2017-12-21 | Bt映像私人有限公司 | 晶圓成像及處理方法與裝置 |
DE102008044881A1 (de) * | 2008-08-29 | 2010-06-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Messverfahren für eine Halbleiterstruktur |
JP5600166B2 (ja) * | 2009-08-04 | 2014-10-01 | エーエスエムエル ネザーランズ ビー.ブイ. | 対象検査システムおよび方法 |
US8330946B2 (en) * | 2009-12-15 | 2012-12-11 | Nanometrics Incorporated | Silicon filter for photoluminescence metrology |
DE102010011066B4 (de) * | 2010-03-11 | 2020-10-22 | Pi4_Robotics Gmbh | Photovoltaikmodul-, oder Photovoltaikzellen- oder Halbleiterbauelement-Identifikationsverfahren und Photovoltaikmodul- oder, Photovoltaikzellen- oder Halbleiterbauelement-Identifikationsvorrichtung |
US8629411B2 (en) | 2010-07-13 | 2014-01-14 | First Solar, Inc. | Photoluminescence spectroscopy |
JP5722445B2 (ja) | 2010-08-16 | 2015-05-20 | エーエスエムエル ネザーランズ ビー.ブイ. | インプリントリソグラフィのための検査方法及びそのための装置 |
WO2012024687A2 (en) * | 2010-08-20 | 2012-02-23 | Purdue Research Foundation | Bond-selective vibrational photoacoustic imaging system and method |
US20120115398A1 (en) * | 2010-11-09 | 2012-05-10 | James Bopp | Chemical-mechanical polishing wafer and method of use |
CN103765567A (zh) * | 2011-06-24 | 2014-04-30 | 科磊股份有限公司 | 使用光致发光成像检验发光半导体装置的方法和设备 |
CN103165407B (zh) * | 2011-12-14 | 2016-04-06 | 有研半导体材料有限公司 | 一种用于硅片表面制样的表面处理及腐蚀的工艺和装置 |
US10036877B2 (en) | 2013-02-05 | 2018-07-31 | Vanderbilt University | Microlens array for enhanced imaging of multiregion targets |
CN103558221B (zh) * | 2013-11-04 | 2016-01-06 | 武汉理工大学 | 一种红外光学材料的均匀性检测装置和方法 |
TWI544213B (zh) * | 2014-03-04 | 2016-08-01 | All Ring Tech Co Ltd | Object detection method and device |
CN104078378A (zh) * | 2014-07-02 | 2014-10-01 | 武汉新芯集成电路制造有限公司 | 一种检测金属污染的方法 |
JP6476617B2 (ja) * | 2014-07-04 | 2019-03-06 | 株式会社Sumco | 半導体基板表面の有機物汚染評価方法およびその利用 |
JP6696729B2 (ja) * | 2015-03-18 | 2020-05-20 | 株式会社Sumco | 半導体基板の評価方法及び半導体基板の製造方法 |
JP6704275B2 (ja) * | 2016-03-28 | 2020-06-03 | 株式会社ディスコ | デバイスウエーハの評価方法 |
US10551320B2 (en) * | 2017-01-30 | 2020-02-04 | Kla-Tencor Corporation | Activation of wafer particle defects for spectroscopic composition analysis |
CN107091822B (zh) * | 2017-03-14 | 2019-09-10 | 华东师范大学 | 双光源激发光致发光检测半导体缺陷的装置及其检测方法 |
CN110044913A (zh) * | 2019-03-27 | 2019-07-23 | 易安基自动化设备(北京)有限公司 | 一种检测物体的表面清洁度的方法及装置 |
CN109916917B (zh) * | 2019-04-17 | 2021-07-13 | 湖北三环锻造有限公司 | 一种渗透探伤工艺 |
CN110544643B (zh) * | 2019-09-11 | 2022-06-28 | 东方日升(常州)新能源有限公司 | 无损伤快速判断金属浆料烧穿深度的方法 |
JP7336977B2 (ja) * | 2019-12-11 | 2023-09-01 | 株式会社ディスコ | レーザービームのスポット形状の補正方法 |
DE102020210999A1 (de) | 2020-09-01 | 2022-03-03 | Forschungszentrum Jülich GmbH | Verfahren und System zur Bewertung von Solarzellen |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06109718A (ja) | 1992-09-28 | 1994-04-22 | Hitachi Ltd | 半導体結晶中の金属元素を分析する方法 |
JPH07297246A (ja) * | 1994-04-27 | 1995-11-10 | Hitachi Ltd | シリコン半導体の金属汚染モニタ方法 |
GB9618897D0 (en) * | 1996-09-10 | 1996-10-23 | Bio Rad Micromeasurements Ltd | Micro defects in silicon wafers |
US5943552A (en) * | 1997-02-06 | 1999-08-24 | Seh America, Inc. | Schottky metal detection method |
JPH11330043A (ja) | 1998-05-18 | 1999-11-30 | Shin Etsu Handotai Co Ltd | シリコンウエーハの評価方法 |
US6159859A (en) * | 1998-06-09 | 2000-12-12 | Air Products And Chemicals, Inc. | Gas phase removal of SiO2 /metals from silicon |
US6791099B2 (en) * | 2001-02-14 | 2004-09-14 | Applied Materials, Inc. | Laser scanning wafer inspection using nonlinear optical phenomena |
JP2003045928A (ja) * | 2001-07-31 | 2003-02-14 | Shin Etsu Handotai Co Ltd | 半導体シリコンウェーハ中のCu汚染評価方法 |
-
2001
- 2001-10-05 WO PCT/GB2001/004454 patent/WO2002029883A1/en not_active Application Discontinuation
- 2001-10-05 US US10/381,208 patent/US6911347B2/en not_active Expired - Fee Related
- 2001-10-05 KR KR1020037004461A patent/KR100612399B1/ko not_active IP Right Cessation
- 2001-10-05 JP JP2002533365A patent/JP2004511104A/ja active Pending
- 2001-10-05 AU AU2001292110A patent/AU2001292110A1/en not_active Abandoned
- 2001-10-05 EP EP01972334A patent/EP1323188A1/en not_active Ceased
- 2001-10-05 IL IL15502101A patent/IL155021A0/xx active IP Right Revival
- 2001-10-05 CN CNB018201903A patent/CN1233030C/zh not_active Expired - Fee Related
-
2003
- 2003-03-20 IL IL155021A patent/IL155021A/en unknown
Also Published As
Publication number | Publication date |
---|---|
CN1233030C (zh) | 2005-12-21 |
KR100612399B1 (ko) | 2006-08-16 |
KR20030051684A (ko) | 2003-06-25 |
IL155021A0 (en) | 2003-10-31 |
WO2002029883A1 (en) | 2002-04-11 |
IL155021A (en) | 2006-12-10 |
CN1479944A (zh) | 2004-03-03 |
US20040106217A1 (en) | 2004-06-03 |
US6911347B2 (en) | 2005-06-28 |
JP2004511104A (ja) | 2004-04-08 |
EP1323188A1 (en) | 2003-07-02 |
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