IL155021A0 - Method to detect surface metal contamination - Google Patents

Method to detect surface metal contamination

Info

Publication number
IL155021A0
IL155021A0 IL15502101A IL15502101A IL155021A0 IL 155021 A0 IL155021 A0 IL 155021A0 IL 15502101 A IL15502101 A IL 15502101A IL 15502101 A IL15502101 A IL 15502101A IL 155021 A0 IL155021 A0 IL 155021A0
Authority
IL
Israel
Prior art keywords
surface metal
metal contamination
detect surface
detect
contamination
Prior art date
Application number
IL15502101A
Other languages
English (en)
Original Assignee
Aoti Operating Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0024537A external-priority patent/GB0024537D0/en
Priority claimed from GB0028222A external-priority patent/GB0028222D0/en
Application filed by Aoti Operating Co Inc filed Critical Aoti Operating Co Inc
Publication of IL155021A0 publication Critical patent/IL155021A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers

Landscapes

  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
IL15502101A 2000-10-06 2001-10-05 Method to detect surface metal contamination IL155021A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0024537A GB0024537D0 (en) 2000-10-06 2000-10-06 Detection method
GB0028222A GB0028222D0 (en) 2000-11-18 2000-11-18 Detection method
PCT/GB2001/004454 WO2002029883A1 (en) 2000-10-06 2001-10-05 Method to detect surface metal contamination

Publications (1)

Publication Number Publication Date
IL155021A0 true IL155021A0 (en) 2003-10-31

Family

ID=26245117

Family Applications (2)

Application Number Title Priority Date Filing Date
IL15502101A IL155021A0 (en) 2000-10-06 2001-10-05 Method to detect surface metal contamination
IL155021A IL155021A (en) 2000-10-06 2003-03-20 Method for detecting surface contamination of metal

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL155021A IL155021A (en) 2000-10-06 2003-03-20 Method for detecting surface contamination of metal

Country Status (8)

Country Link
US (1) US6911347B2 (xx)
EP (1) EP1323188A1 (xx)
JP (1) JP2004511104A (xx)
KR (1) KR100612399B1 (xx)
CN (1) CN1233030C (xx)
AU (1) AU2001292110A1 (xx)
IL (2) IL155021A0 (xx)
WO (1) WO2002029883A1 (xx)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
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GB9618897D0 (en) * 1996-09-10 1996-10-23 Bio Rad Micromeasurements Ltd Micro defects in silicon wafers
JP2003045928A (ja) * 2001-07-31 2003-02-14 Shin Etsu Handotai Co Ltd 半導体シリコンウェーハ中のＣｕ汚染評価方法
US7619735B2 (en) * 2002-01-15 2009-11-17 Applied Materials, Israel, Ltd. Optical inspection using variable apodization
JP3729154B2 (ja) * 2002-05-10 2005-12-21 株式会社日立製作所 パターン欠陥検査方法及びその装置
GB0216620D0 (en) * 2002-07-17 2002-08-28 Aoti Operating Co Inc Detection method and apparatus
GB0308182D0 (en) * 2003-04-09 2003-05-14 Aoti Operating Co Inc Detection method and apparatus
CN100552888C (zh) * 2003-10-27 2009-10-21 住友电气工业株式会社 氮化镓半导体衬底及其制造方法
US7362448B1 (en) 2004-09-08 2008-04-22 Nanometrics Incorporated Characterizing residue on a sample
US7400390B2 (en) * 2004-11-29 2008-07-15 Applied Materials, Israel, Ltd. Inspection system and a method for aerial reticle inspection
US20070000434A1 (en) * 2005-06-30 2007-01-04 Accent Optical Technologies, Inc. Apparatuses and methods for detecting defects in semiconductor workpieces
TWI439684B (zh) 2005-07-06 2014-06-01 Nanometrics Inc 具自晶圓或其他工件特定材料層所發射光致發光信號優先偵測之光致發光成像
TWI391645B (zh) 2005-07-06 2013-04-01 Nanometrics Inc 晶圓或其他工作表面下污染物及缺陷非接觸測量之差分波長光致發光
US20070008526A1 (en) * 2005-07-08 2007-01-11 Andrzej Buczkowski Apparatus and method for non-contact assessment of a constituent in semiconductor workpieces
EP1946079B1 (en) * 2005-10-11 2017-12-06 BT Imaging Pty Limited Method and system for inspecting indirect bandgap semiconductor structure
JP5219334B2 (ja) * 2005-11-30 2013-06-26 株式会社Ｓｕｍｃｏ 半導体基板の製造方法および品質評価方法
US20070176119A1 (en) * 2006-01-30 2007-08-02 Accent Optical Technologies, Inc. Apparatuses and methods for analyzing semiconductor workpieces
US7517706B2 (en) * 2006-07-21 2009-04-14 Sumco Corporation Method for evaluating quality of semiconductor substrate and method for manufacturing semiconductor substrate
TWI609177B (zh) * 2008-03-31 2017-12-21 Ｂｔ映像私人有限公司 晶圓成像及處理方法與裝置
DE102008044881A1 (de) * 2008-08-29 2010-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Messverfahren für eine Halbleiterstruktur
JP5600166B2 (ja) * 2009-08-04 2014-10-01 エーエスエムエル ネザーランズ ビー．ブイ． 対象検査システムおよび方法
US8330946B2 (en) * 2009-12-15 2012-12-11 Nanometrics Incorporated Silicon filter for photoluminescence metrology
DE102010011066B4 (de) * 2010-03-11 2020-10-22 Pi4_Robotics Gmbh Photovoltaikmodul-, oder Photovoltaikzellen- oder Halbleiterbauelement-Identifikationsverfahren und Photovoltaikmodul- oder, Photovoltaikzellen- oder Halbleiterbauelement-Identifikationsvorrichtung
US8629411B2 (en) 2010-07-13 2014-01-14 First Solar, Inc. Photoluminescence spectroscopy
JP5722445B2 (ja) 2010-08-16 2015-05-20 エーエスエムエル ネザーランズ ビー．ブイ． インプリントリソグラフィのための検査方法及びそのための装置
WO2012024687A2 (en) * 2010-08-20 2012-02-23 Purdue Research Foundation Bond-selective vibrational photoacoustic imaging system and method
US20120115398A1 (en) * 2010-11-09 2012-05-10 James Bopp Chemical-mechanical polishing wafer and method of use
CN103765567A (zh) * 2011-06-24 2014-04-30 科磊股份有限公司 使用光致发光成像检验发光半导体装置的方法和设备
CN103165407B (zh) * 2011-12-14 2016-04-06 有研半导体材料有限公司 一种用于硅片表面制样的表面处理及腐蚀的工艺和装置
US10036877B2 (en) 2013-02-05 2018-07-31 Vanderbilt University Microlens array for enhanced imaging of multiregion targets
CN103558221B (zh) * 2013-11-04 2016-01-06 武汉理工大学 一种红外光学材料的均匀性检测装置和方法
TWI544213B (zh) * 2014-03-04 2016-08-01 All Ring Tech Co Ltd Object detection method and device
CN104078378A (zh) * 2014-07-02 2014-10-01 武汉新芯集成电路制造有限公司 一种检测金属污染的方法
JP6476617B2 (ja) * 2014-07-04 2019-03-06 株式会社Sumco 半導体基板表面の有機物汚染評価方法およびその利用
JP6696729B2 (ja) * 2015-03-18 2020-05-20 株式会社Sumco 半導体基板の評価方法及び半導体基板の製造方法
JP6704275B2 (ja) * 2016-03-28 2020-06-03 株式会社ディスコ デバイスウエーハの評価方法
US10551320B2 (en) * 2017-01-30 2020-02-04 Kla-Tencor Corporation Activation of wafer particle defects for spectroscopic composition analysis
CN107091822B (zh) * 2017-03-14 2019-09-10 华东师范大学 双光源激发光致发光检测半导体缺陷的装置及其检测方法
CN110044913A (zh) * 2019-03-27 2019-07-23 易安基自动化设备(北京)有限公司 一种检测物体的表面清洁度的方法及装置
CN109916917B (zh) * 2019-04-17 2021-07-13 湖北三环锻造有限公司 一种渗透探伤工艺
CN110544643B (zh) * 2019-09-11 2022-06-28 东方日升（常州）新能源有限公司 无损伤快速判断金属浆料烧穿深度的方法
JP7336977B2 (ja) * 2019-12-11 2023-09-01 株式会社ディスコ レーザービームのスポット形状の補正方法
DE102020210999A1 (de) 2020-09-01 2022-03-03 Forschungszentrum Jülich GmbH Verfahren und System zur Bewertung von Solarzellen

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06109718A (ja) 1992-09-28 1994-04-22 Hitachi Ltd 半導体結晶中の金属元素を分析する方法
JPH07297246A (ja) * 1994-04-27 1995-11-10 Hitachi Ltd シリコン半導体の金属汚染モニタ方法
GB9618897D0 (en) * 1996-09-10 1996-10-23 Bio Rad Micromeasurements Ltd Micro defects in silicon wafers
US5943552A (en) * 1997-02-06 1999-08-24 Seh America, Inc. Schottky metal detection method
JPH11330043A (ja) 1998-05-18 1999-11-30 Shin Etsu Handotai Co Ltd シリコンウエーハの評価方法
US6159859A (en) * 1998-06-09 2000-12-12 Air Products And Chemicals, Inc. Gas phase removal of SiO2 /metals from silicon
US6791099B2 (en) * 2001-02-14 2004-09-14 Applied Materials, Inc. Laser scanning wafer inspection using nonlinear optical phenomena
JP2003045928A (ja) * 2001-07-31 2003-02-14 Shin Etsu Handotai Co Ltd 半導体シリコンウェーハ中のＣｕ汚染評価方法

Also Published As

Publication number Publication date
CN1233030C (zh) 2005-12-21
KR100612399B1 (ko) 2006-08-16
AU2001292110A1 (en) 2002-04-15
KR20030051684A (ko) 2003-06-25
WO2002029883A1 (en) 2002-04-11
IL155021A (en) 2006-12-10
CN1479944A (zh) 2004-03-03
US20040106217A1 (en) 2004-06-03
US6911347B2 (en) 2005-06-28
JP2004511104A (ja) 2004-04-08
EP1323188A1 (en) 2003-07-02

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Legal Events

Date Code Title Description
FF Patent granted
MM9K Patent not in force due to non-payment of renewal fees
NE Application for restoration - patent lapsed through non-payment of renewal fees (section 60, patents law, 5727-1967)
KB Patent renewed