AU2001276781A1 - Process for crystallizing enantiomerically enriched 2-acetylthio-3-phenylpropionic acid - Google Patents

Process for crystallizing enantiomerically enriched 2-acetylthio-3-phenylpropionic acid

Info

Publication number
AU2001276781A1
AU2001276781A1 AU2001276781A AU7678101A AU2001276781A1 AU 2001276781 A1 AU2001276781 A1 AU 2001276781A1 AU 2001276781 A AU2001276781 A AU 2001276781A AU 7678101 A AU7678101 A AU 7678101A AU 2001276781 A1 AU2001276781 A1 AU 2001276781A1
Authority
AU
Australia
Prior art keywords
acetylthio
crystallizing
phenylpropionic acid
enantiomerically enriched
enantiomerically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001276781A
Other languages
English (en)
Inventor
Franciscus Alphons Marie Lommen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke DSM NV
Original Assignee
DSM NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DSM NV filed Critical DSM NV
Publication of AU2001276781A1 publication Critical patent/AU2001276781A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C329/00Thiocarbonic acids; Halides, esters or anhydrides thereof
    • C07C329/02Monothiocarbonic acids; Derivatives thereof
    • C07C329/04Esters of monothiocarbonic acids
    • C07C329/06Esters of monothiocarbonic acids having sulfur atoms of thiocarbonic groups bound to acyclic carbon atoms
AU2001276781A 2000-07-14 2001-07-12 Process for crystallizing enantiomerically enriched 2-acetylthio-3-phenylpropionic acid Abandoned AU2001276781A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL1015714 2000-07-14
NL1015714A NL1015714C2 (nl) 2000-07-14 2000-07-14 Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
PCT/NL2001/000534 WO2002006217A1 (en) 2000-07-14 2001-07-12 Process for crystallizing enantiomerically enriched 2-acetylthio-3-phenylpropionic acid

Publications (1)

Publication Number Publication Date
AU2001276781A1 true AU2001276781A1 (en) 2002-01-30

Family

ID=19771743

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001276781A Abandoned AU2001276781A1 (en) 2000-07-14 2001-07-12 Process for crystallizing enantiomerically enriched 2-acetylthio-3-phenylpropionic acid

Country Status (5)

Country Link
US (1) US20040069208A1 (nl)
EP (1) EP1313702A1 (nl)
AU (1) AU2001276781A1 (nl)
NL (1) NL1015714C2 (nl)
WO (1) WO2002006217A1 (nl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030013903A1 (en) * 2000-04-21 2003-01-16 Koichi Kinoshita Process for crystallization of 2-acetylthio-3-phenyl-propionic acid

Family Cites Families (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1186257A (en) * 1966-09-26 1970-04-02 Toyo Kogyo Kabushiki Kaisha Sealing Means for Pistons of Rotary-Piston Internal Combustion Engines.
US3878105A (en) * 1974-05-28 1975-04-15 Gen Dynamics Corp Optical radiation transmission and detection device
US3974514A (en) * 1974-12-11 1976-08-10 Rca Corporation Electroluminescent edge-emitting diode comprising a light reflector in a groove
US3978428A (en) * 1975-06-23 1976-08-31 Xerox Corporation Buried-heterostructure diode injection laser
US4033796A (en) * 1975-06-23 1977-07-05 Xerox Corporation Method of making buried-heterostructure diode injection laser
US4110661A (en) * 1977-04-01 1978-08-29 Rockwell International Corporation Light emitting device for optical communications
US4376946A (en) * 1980-11-28 1983-03-15 Bell Telephone Laboratories, Incorporated Superluminescent LED with efficient coupling to optical waveguide
US4573163A (en) * 1982-09-13 1986-02-25 At&T Bell Laboratories Longitudinal mode stabilized laser
US4636821A (en) * 1983-02-21 1987-01-13 Nec Corporation Surface-emitting semiconductor elements
JPS6042890A (ja) * 1983-08-18 1985-03-07 Mitsubishi Electric Corp 面発光形半導体レ−ザ及びその製造方法
CA1267716A (en) * 1984-02-23 1990-04-10 Frederick W. Scholl Edge-emitting light emitting diode
US4730326A (en) * 1984-09-12 1988-03-08 Sharp Kabushiki Kaisha Semiconductor laser array device
JPS6225485A (ja) * 1985-07-25 1987-02-03 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS6257275A (ja) * 1985-09-06 1987-03-12 Sharp Corp 半導体レ−ザアレイ装置
US4740481A (en) * 1986-01-21 1988-04-26 Motorola Inc. Method of preventing hillock formation in polysilicon layer by oxygen implanation
JPH0738457B2 (ja) * 1986-07-18 1995-04-26 株式会社東芝 光・電子双安定素子
US4856014A (en) * 1986-12-31 1989-08-08 Trw Inc. Angled stripe superluminescent diode
JPS63205984A (ja) * 1987-02-23 1988-08-25 Mitsubishi Electric Corp 面発光型半導体レ−ザ
US4745462A (en) * 1987-03-02 1988-05-17 Rca Corporation Image storage using separately scanned color component variables
JPS63258090A (ja) * 1987-04-15 1988-10-25 Sharp Corp 半導体レ−ザ装置
CA1337400C (en) * 1987-06-08 1995-10-24 Norma G. Delaney Inhibitors of neutral endopeptidase
JPH0646669B2 (ja) * 1987-07-28 1994-06-15 日本電気株式会社 半導体レ−ザ及びその製造方法
DE3727546A1 (de) * 1987-08-18 1989-03-02 Siemens Ag Lichtverstaerker mit ringfoermig gefuehrter strahlung, insbesondere ringlaser-diode
US4856017A (en) * 1987-12-22 1989-08-08 Ortel Corporation Single frequency high power semiconductor laser
US4942585A (en) * 1987-12-22 1990-07-17 Ortel Corporation High power semiconductor laser
JPH01264285A (ja) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co 面発光型半導体レーザ
JPH069282B2 (ja) * 1988-09-09 1994-02-02 株式会社東芝 半導体レーザ装置
US4943970A (en) * 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
US4990466A (en) * 1988-11-01 1991-02-05 Siemens Corporate Research, Inc. Method for fabricating index-guided semiconductor laser
US5029175A (en) * 1988-12-08 1991-07-02 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
US5436192A (en) * 1989-03-24 1995-07-25 Xerox Corporation Method of fabricating semiconductor structures via photo induced evaporation enhancement during in situ epitaxial growth
US5033053A (en) * 1989-03-30 1991-07-16 Canon Kabushiki Kaisha Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same
US4991179A (en) * 1989-04-26 1991-02-05 At&T Bell Laboratories Electrically pumped vertical cavity laser
US5038356A (en) * 1989-12-04 1991-08-06 Trw Inc. Vertical-cavity surface-emitting diode laser
US5018157A (en) * 1990-01-30 1991-05-21 At&T Bell Laboratories Vertical cavity semiconductor lasers
US5223204A (en) * 1990-03-06 1993-06-29 Get, Inc. Method and apparatus for reversing a tubular bag
US5115442A (en) * 1990-04-13 1992-05-19 At&T Bell Laboratories Top-emitting surface emitting laser structures
US5034958A (en) * 1990-04-19 1991-07-23 Bell Communications Research, Inc. Front-surface emitting diode laser
US5289018A (en) * 1990-08-14 1994-02-22 Canon Kabushiki Kaisha Light emitting device utilizing cavity quantum electrodynamics
US5033054A (en) * 1990-08-17 1991-07-16 Spectra Diode Laboratories, Inc. Phase conjugate laser
US5088099A (en) * 1990-12-20 1992-02-11 At&T Bell Laboratories Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence
US5115441A (en) * 1991-01-03 1992-05-19 At&T Bell Laboratories Vertical cavity surface emmitting lasers with transparent electrodes
EP0503729A3 (en) * 1991-03-15 1992-12-02 N.V. Philips' Gloeilampenfabrieken Optoelectronic semiconductor device and method of manufacturing such a device
US5132982A (en) * 1991-05-09 1992-07-21 Bell Communications Research, Inc. Optically controlled surface-emitting lasers
US5206871A (en) * 1991-12-27 1993-04-27 At&T Bell Laboratories Optical devices with electron-beam evaporated multilayer mirror
US5216686A (en) * 1992-02-03 1993-06-01 Motorola, Inc. Integrated HBT and VCSEL structure and method of fabrication
US5231642A (en) * 1992-05-08 1993-07-27 Spectra Diode Laboratories, Inc. Semiconductor ring and folded cavity lasers
US5285466A (en) * 1992-05-20 1994-02-08 Wisconsin Alumni Research Foundation Feedback mechanism for vertical cavity surface emitting lasers
US5293392A (en) * 1992-07-31 1994-03-08 Motorola, Inc. Top emitting VCSEL with etch stop layer
US5317587A (en) * 1992-08-06 1994-05-31 Motorola, Inc. VCSEL with separate control of current distribution and optical mode
US5311533A (en) * 1992-10-23 1994-05-10 Polaroid Corporation Index-guided laser array with select current paths defined by migration-enhanced dopant incorporation and dopant diffusion
US5337327A (en) * 1993-02-22 1994-08-09 Motorola, Inc. VCSEL with lateral index guide
US5301201A (en) * 1993-03-01 1994-04-05 At&T Bell Laboratories Article comprising a tunable semiconductor laser
DE69405427T2 (de) * 1993-03-04 1998-04-02 At & T Corp Vorrichtung mit fokussierendem oberflächenemittierendem Halbleiterlaser
US5331654A (en) * 1993-03-05 1994-07-19 Photonics Research Incorporated Polarized surface-emitting laser
US5416044A (en) * 1993-03-12 1995-05-16 Matsushita Electric Industrial Co., Ltd. Method for producing a surface-emitting laser
US5328854A (en) * 1993-03-31 1994-07-12 At&T Bell Laboratories Fabrication of electronic devices with an internal window
US5397917A (en) * 1993-04-26 1995-03-14 Motorola, Inc. Semiconductor package capable of spreading heat
US5397739A (en) * 1993-07-26 1995-03-14 Sandia Corporation Method for accurate growth of vertical-cavity surface-emitting lasers
US5362727A (en) * 1993-07-26 1994-11-08 Bristol-Myers Squibb Substituted azepino[2,1-a]isoquinoline compounds
US5388120A (en) * 1993-09-21 1995-02-07 Motorola, Inc. VCSEL with unstable resonator
US5420880A (en) * 1993-10-12 1995-05-30 Wisconsin Alumni Research Foundation Low threshold vertical cavity surface emitting laser
US5379312A (en) * 1993-10-25 1995-01-03 Xerox Corporation Semiconductor laser with tensile-strained etch-stop layer
US5422901A (en) * 1993-11-15 1995-06-06 Motorola, Inc. Semiconductor device with high heat conductivity
US5485014A (en) * 1993-12-30 1996-01-16 The University Of Connecticut Multiple quantum well birefringent spatial light modulator
US5412680A (en) * 1994-03-18 1995-05-02 Photonics Research Incorporated Linear polarization of semiconductor laser
US5606572A (en) * 1994-03-24 1997-02-25 Vixel Corporation Integration of laser with photodiode for feedback control
US5400356A (en) * 1994-06-28 1995-03-21 Xerox Corporation Index-guided laser on grooved (001) substrate
US5491712A (en) * 1994-10-31 1996-02-13 Lin; Hong Integration of surface emitting laser and photodiode for monitoring power output of surface emitting laser
US5530715A (en) * 1994-11-29 1996-06-25 Motorola, Inc. Vertical cavity surface emitting laser having continuous grading
US5493577A (en) * 1994-12-21 1996-02-20 Sandia Corporation Efficient semiconductor light-emitting device and method
US5708674A (en) * 1995-01-03 1998-01-13 Xerox Corporation Semiconductor laser or array formed by layer intermixing
US5717707A (en) * 1995-01-03 1998-02-10 Xerox Corporation Index guided semiconductor laser diode with reduced shunt leakage currents
US5766981A (en) * 1995-01-04 1998-06-16 Xerox Corporation Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD
US5513204A (en) * 1995-04-12 1996-04-30 Optical Concepts, Inc. Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
US5638392A (en) * 1995-05-15 1997-06-10 Motorola Short wavelength VCSEL
US5635504A (en) * 1995-06-07 1997-06-03 Bristol-Myers Squibb Co. Diazepine containing dual action inhibitors
US5596595A (en) * 1995-06-08 1997-01-21 Hewlett-Packard Company Current and heat spreading transparent layers for surface-emitting lasers
GB2303690B (en) * 1995-07-21 1999-05-26 Queenborough Rolling Mill Comp An oxy:fuel melting furnace
JPH0945993A (ja) * 1995-07-28 1997-02-14 Sony Corp 半導体発光素子
US5712865A (en) * 1995-09-28 1998-01-27 Sandia Corporation Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof
DE19538232A1 (de) * 1995-10-13 1997-04-17 Siemens Ag Optoelektronisches Bauelement mit kodirektionaler Modenkopplung
US5706306A (en) * 1996-03-15 1998-01-06 Motorola VCSEL with distributed Bragg reflectors for visible light
US5903590A (en) * 1996-05-20 1999-05-11 Sandia Corporation Vertical-cavity surface-emitting laser device
US5719893A (en) * 1996-07-17 1998-02-17 Motorola, Inc. Passivated vertical cavity surface emitting laser
US5708669A (en) * 1996-09-24 1998-01-13 Lucent Technologies Inc. Article comprising a cladding-pumped optical fiber laser
US5719894A (en) * 1996-09-25 1998-02-17 Picolight Incorporated Extended wavelength strained layer lasers having nitrogen disposed therein
US5764676A (en) * 1996-09-26 1998-06-09 Xerox Corporation Transversely injected multiple wavelength diode laser array formed by layer disordering
US6026108A (en) * 1996-10-16 2000-02-15 The Regents Of The University Of California Vertical-cavity surface-emitting laser with an intracavity quantum-well optical absorber
US6256330B1 (en) * 1996-12-02 2001-07-03 Lacomb Ronald Bruce Gain and index tailored single mode semiconductor laser
US5732103A (en) * 1996-12-09 1998-03-24 Motorola, Inc. Long wavelength VCSEL
US5914973A (en) * 1997-02-10 1999-06-22 Motorola, Inc. Vertical cavity surface emitting laser for high power operation and method of fabrication
US5898722A (en) * 1997-03-10 1999-04-27 Motorola, Inc. Dual wavelength monolithically integrated vertical cavity surface emitting lasers and method of fabrication
US5877519A (en) * 1997-03-26 1999-03-02 Picolight Incoporated Extended wavelength opto-electronic devices
US5917848A (en) * 1997-07-17 1999-06-29 Motorola, Inc. Vertical cavity surface emitting laser with phase shift mask
US5896408A (en) * 1997-08-15 1999-04-20 Hewlett-Packard Company Near planar native-oxide VCSEL devices and arrays using converging oxide ringlets
US6169757B1 (en) * 1997-09-26 2001-01-02 Scott A. Merritt Intermodal phase difference controller for beam angle modulation in index guided semiconductor devices
JPH11251685A (ja) * 1998-03-05 1999-09-17 Toshiba Corp 半導体レーザ
US6195381B1 (en) * 1998-04-27 2001-02-27 Wisconsin Alumni Research Foundation Narrow spectral width high-power distributed feedback semiconductor lasers
US6185241B1 (en) * 1998-10-29 2001-02-06 Xerox Corporation Metal spatial filter to enhance model reflectivity in a vertical cavity surface emitting laser
JP2000309557A (ja) * 1999-04-28 2000-11-07 Ajinomoto Co Inc 光学活性プロピオン酸誘導体の製法

Also Published As

Publication number Publication date
US20040069208A1 (en) 2004-04-15
EP1313702A1 (en) 2003-05-28
NL1015714C2 (nl) 2002-01-15
WO2002006217A1 (en) 2002-01-24

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