AU2001267913A1 - Operation monitoring method for treatment apparatus - Google Patents

Operation monitoring method for treatment apparatus

Info

Publication number
AU2001267913A1
AU2001267913A1 AU2001267913A AU6791301A AU2001267913A1 AU 2001267913 A1 AU2001267913 A1 AU 2001267913A1 AU 2001267913 A AU2001267913 A AU 2001267913A AU 6791301 A AU6791301 A AU 6791301A AU 2001267913 A1 AU2001267913 A1 AU 2001267913A1
Authority
AU
Australia
Prior art keywords
treatment apparatus
monitoring method
operation monitoring
treatment
monitoring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001267913A
Other languages
English (en)
Inventor
Shinji Sakano
Tsuyoshi Sendoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000201731A external-priority patent/JP4610021B2/ja
Priority claimed from JP2000201729A external-priority patent/JP4570736B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2001267913A1 publication Critical patent/AU2001267913A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
AU2001267913A 2000-07-04 2001-07-03 Operation monitoring method for treatment apparatus Abandoned AU2001267913A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000201731A JP4610021B2 (ja) 2000-07-04 2000-07-04 処理装置の運転方法及び処理装置の異常検出方法
JP2000201729A JP4570736B2 (ja) 2000-07-04 2000-07-04 運転状態の監視方法
JP2000-201729 2000-07-04
JP2000-201731 2000-07-04
PCT/JP2001/005758 WO2002003441A1 (fr) 2000-07-04 2001-07-03 Procede de surveillance de fonctionnement pour appareil de traitement

Publications (1)

Publication Number Publication Date
AU2001267913A1 true AU2001267913A1 (en) 2002-01-14

Family

ID=26595307

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001267913A Abandoned AU2001267913A1 (en) 2000-07-04 2001-07-03 Operation monitoring method for treatment apparatus

Country Status (5)

Country Link
US (1) US7054786B2 (zh)
CN (1) CN1197130C (zh)
AU (1) AU2001267913A1 (zh)
TW (1) TW499702B (zh)
WO (1) WO2002003441A1 (zh)

Families Citing this family (22)

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CN1653598B (zh) 2002-05-16 2010-05-05 东京毅力科创株式会社 处理装置状态或处理结果的预测方法
US7505879B2 (en) 2002-06-05 2009-03-17 Tokyo Electron Limited Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus
WO2003105210A1 (ja) * 2002-06-05 2003-12-18 東京エレクトロン株式会社 処理装置の多変量解析モデル式作成方法、処理装置用の多変量解析方法、処理装置の制御装置、処理装置の制御システム
JP2004047885A (ja) * 2002-07-15 2004-02-12 Matsushita Electric Ind Co Ltd 半導体製造装置のモニタリングシステム及びモニタリング方法
TWI264043B (en) * 2002-10-01 2006-10-11 Tokyo Electron Ltd Method and system for analyzing data from a plasma process
US7010374B2 (en) 2003-03-04 2006-03-07 Hitachi High-Technologies Corporation Method for controlling semiconductor processing apparatus
CN1295757C (zh) * 2003-03-04 2007-01-17 株式会社日立高新技术 半导体处理装置的控制方法
JP2004335841A (ja) * 2003-05-09 2004-11-25 Tokyo Electron Ltd プラズマ処理装置の予測装置及び予測方法
JP4342921B2 (ja) * 2003-12-09 2009-10-14 東京エレクトロン株式会社 基板処理装置の制御方法及び基板処理装置
US8676538B2 (en) * 2004-11-02 2014-03-18 Advanced Micro Devices, Inc. Adjusting weighting of a parameter relating to fault detection based on a detected fault
JP4972277B2 (ja) * 2004-11-10 2012-07-11 東京エレクトロン株式会社 基板処理装置の復帰方法、該装置の復帰プログラム、及び基板処理装置
US7231321B2 (en) * 2004-11-10 2007-06-12 Tokyo Electron Limited Method of resetting substrate processing apparatus, storage medium storing program for implementing the method, and substrate processing apparatus
JP4569956B2 (ja) * 2005-01-24 2010-10-27 東京エレクトロン株式会社 基板処理装置の復旧処理方法，基板処理装置，プログラム
CN101523307B (zh) * 2006-09-28 2011-06-15 三菱电机株式会社 故障检测装置以及故障检测方法
CN101330030B (zh) * 2007-06-21 2010-09-29 中芯国际集成电路制造(上海)有限公司 检测数据中异常点的去除方法
WO2015029777A1 (ja) * 2013-08-28 2015-03-05 堺ディスプレイプロダクト株式会社 プラズマ処理装置及びプラズマ処理装置の監視方法
CN103943452B (zh) * 2014-04-28 2016-04-27 南方科技大学 一种等离子体处理的工艺控制方法及装置
GB2535456A (en) * 2015-02-12 2016-08-24 Edwards Ltd Processing tool monitoring
US11068744B2 (en) 2016-01-13 2021-07-20 Mitsubishi Electric Corporation Operation state classification apparatus
JP6676020B2 (ja) 2017-09-20 2020-04-08 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理装置状態予測方法
JP6914211B2 (ja) 2018-01-30 2021-08-04 株式会社日立ハイテク プラズマ処理装置及び状態予測装置
JP7029362B2 (ja) * 2018-08-16 2022-03-03 三菱重工業株式会社 異常検出装置、異常検出方法、及びプログラム

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US5442562A (en) 1993-12-10 1995-08-15 Eastman Kodak Company Method of controlling a manufacturing process using multivariate analysis
US5691642A (en) * 1995-07-28 1997-11-25 Trielectrix Method and apparatus for characterizing a plasma using broadband microwave spectroscopic measurements
US5658423A (en) * 1995-11-27 1997-08-19 International Business Machines Corporation Monitoring and controlling plasma processes via optical emission using principal component analysis
CN1299226C (zh) * 1997-09-17 2007-02-07 东京电子株式会社 用于监视和控制气体等离子体处理的系统和方法
US6341257B1 (en) * 1999-03-04 2002-01-22 Sandia Corporation Hybrid least squares multivariate spectral analysis methods
US6442445B1 (en) * 1999-03-19 2002-08-27 International Business Machines Corporation, User configurable multivariate time series reduction tool control method
US6368975B1 (en) * 1999-07-07 2002-04-09 Applied Materials, Inc. Method and apparatus for monitoring a process by employing principal component analysis
WO2001013401A1 (de) * 1999-08-12 2001-02-22 Infineon Technologies Ag Verfahren zur überwachung eines herstellungsprozesses zur bearbeitung eines substrats in der halbleiterfertigung
US6582618B1 (en) * 1999-09-08 2003-06-24 Advanced Micro Devices, Inc. Method of determining etch endpoint using principal components analysis of optical emission spectra
US6419846B1 (en) * 1999-09-08 2002-07-16 Advanced Micro Devices, Inc. Determining endpoint in etching processes using principal components analysis of optical emission spectra
US6413867B1 (en) * 1999-12-23 2002-07-02 Applied Materials, Inc. Film thickness control using spectral interferometry
EP1252652A1 (de) * 2000-01-25 2002-10-30 Infineon Technologies AG Verfahren zur überwachung eines herstellungsprozesses
US6917845B2 (en) * 2000-03-10 2005-07-12 Smiths Detection-Pasadena, Inc. Method for monitoring environmental condition using a mathematical model
AU2001251216A1 (en) * 2000-03-30 2001-10-15 Tokyo Electron Limited Optical monitoring and control system and method for plasma reactors
AU2001273306A1 (en) * 2000-07-05 2002-01-14 Camo, Inc. Method and system for the dynamic analysis of data
JP3634734B2 (ja) * 2000-09-22 2005-03-30 株式会社日立製作所 プラズマ処理装置および処理方法
US6627463B1 (en) * 2000-10-19 2003-09-30 Applied Materials, Inc. Situ measurement of film nitridation using optical emission spectroscopy
US6789052B1 (en) * 2000-10-24 2004-09-07 Advanced Micro Devices, Inc. Method of using control models for data compression
US6549864B1 (en) * 2001-08-13 2003-04-15 General Electric Company Multivariate statistical process analysis systems and methods for the production of melt polycarbonate
US6616759B2 (en) * 2001-09-06 2003-09-09 Hitachi, Ltd. Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor
US6723574B1 (en) * 2002-09-26 2004-04-20 Lam Research Corporation Method for quantifying uniformity patterns and including expert knowledge for tool development and control

Also Published As

Publication number Publication date
US7054786B2 (en) 2006-05-30
WO2002003441A1 (fr) 2002-01-10
TW499702B (en) 2002-08-21
CN1451174A (zh) 2003-10-22
CN1197130C (zh) 2005-04-13
US20040254761A1 (en) 2004-12-16

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