AU2001251216A1 - Optical monitoring and control system and method for plasma reactors - Google Patents

Optical monitoring and control system and method for plasma reactors

Info

Publication number
AU2001251216A1
AU2001251216A1 AU2001251216A AU5121601A AU2001251216A1 AU 2001251216 A1 AU2001251216 A1 AU 2001251216A1 AU 2001251216 A AU2001251216 A AU 2001251216A AU 5121601 A AU5121601 A AU 5121601A AU 2001251216 A1 AU2001251216 A1 AU 2001251216A1
Authority
AU
Australia
Prior art keywords
control system
optical monitoring
plasma reactors
reactors
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001251216A
Inventor
Wayne L. Johnson
Lianjun Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2001251216A1 publication Critical patent/AU2001251216A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0012—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry
    • H05H1/0037—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry by spectrometry
AU2001251216A 2000-03-30 2001-03-30 Optical monitoring and control system and method for plasma reactors Abandoned AU2001251216A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19325000P 2000-03-30 2000-03-30
US60193250 2000-03-30
PCT/US2001/010556 WO2001076326A1 (en) 2000-03-30 2001-03-30 Optical monitoring and control system and method for plasma reactors

Publications (1)

Publication Number Publication Date
AU2001251216A1 true AU2001251216A1 (en) 2001-10-15

Family

ID=22712831

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001251216A Abandoned AU2001251216A1 (en) 2000-03-30 2001-03-30 Optical monitoring and control system and method for plasma reactors

Country Status (4)

Country Link
US (2) US7462335B2 (en)
JP (1) JP4754757B2 (en)
AU (1) AU2001251216A1 (en)
WO (1) WO2001076326A1 (en)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1197130C (en) * 2000-07-04 2005-04-13 东京毅力科创株式会社 Operation monitoring method for treatment apparatus
US6642661B2 (en) 2001-08-28 2003-11-04 Tokyo Electron Limited Method to affect spatial distribution of harmonic generation in a capacitive discharge reactor
US6689067B2 (en) * 2001-11-28 2004-02-10 Siemens Corporate Research, Inc. Method and apparatus for ultrasound guidance of needle biopsies
JP3897620B2 (en) * 2002-03-14 2007-03-28 三菱重工業株式会社 High frequency power supply structure and plasma CVD apparatus including the same
MY136375A (en) * 2002-03-25 2008-09-30 Adaptive Plasma Tech Corp Plasma etching method and apparatus for manufacturing a semiconductor device
US6815653B2 (en) * 2002-04-15 2004-11-09 Taiwan Semiconductor Manufacturing Co., Ltd Method and apparatus for early detection of material accretion and peeling in plasma system
US20030209518A1 (en) * 2002-05-08 2003-11-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method of detecting abnormal chamber conditions in etcher
US20040016402A1 (en) * 2002-07-26 2004-01-29 Walther Steven R. Methods and apparatus for monitoring plasma parameters in plasma doping systems
TWI240326B (en) * 2002-10-31 2005-09-21 Tokyo Electron Ltd Method and apparatus for determining an etch property using an endpoint signal
JP4753276B2 (en) * 2002-11-26 2011-08-24 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
US20050020073A1 (en) * 2003-07-22 2005-01-27 Lam Research Corporation Method and system for electronic spatial filtering of spectral reflectometer optical signals
JP4177192B2 (en) * 2003-08-05 2008-11-05 株式会社日立ハイテクノロジーズ Plasma etching apparatus and plasma etching method
US20050031796A1 (en) * 2003-08-07 2005-02-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for controlling spatial distribution of RF power and plasma density
US6829056B1 (en) * 2003-08-21 2004-12-07 Michael Barnes Monitoring dimensions of features at different locations in the processing of substrates
KR100500474B1 (en) * 2003-10-29 2005-07-12 삼성전자주식회사 End Point Detection of etching equipment
US20050115924A1 (en) * 2003-12-01 2005-06-02 Justin Sato Integration function of RF signal to analyze steady state and non-steady state ( initializaion) of plasmas
JP4298523B2 (en) * 2004-01-09 2009-07-22 株式会社ディスコ Etching device
DE102004007984A1 (en) * 2004-02-18 2005-09-01 Aixtron Ag CVD reactor with photodiode array
JP4522783B2 (en) * 2004-08-03 2010-08-11 株式会社日立ハイテクノロジーズ Plasma processing apparatus and plasma processing method
US7713432B2 (en) * 2004-10-04 2010-05-11 David Johnson Method and apparatus to improve plasma etch uniformity
US20070007244A1 (en) * 2005-07-05 2007-01-11 International Business Machines Corporation Detection of loss of plasma confinement
US7833381B2 (en) * 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
US20070042510A1 (en) * 2005-08-19 2007-02-22 Wafermasters, Incorporated In situ process monitoring and control
JP4619969B2 (en) * 2006-03-22 2011-01-26 日本碍子株式会社 Plasma reactor
US20070245960A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion density
US20080176149A1 (en) 2006-10-30 2008-07-24 Applied Materials, Inc. Endpoint detection for photomask etching
TWI350006B (en) * 2007-10-05 2011-10-01 Ind Tech Res Inst Plasma enhanced thin film deposition method
US8855899B2 (en) * 2008-05-15 2014-10-07 Garmin Switzerland Gmbh Virtual traffic sensors
US8189189B1 (en) 2008-10-08 2012-05-29 Herendeen Robert O LED sensor for process control
DE102010027224A1 (en) * 2010-07-15 2012-01-19 Forschungszentrum Jülich GmbH Electrode for generating a plasma, plasma chamber with this electrode and method for in situ analysis or in-situ processing of a layer or the plasma
US8877080B2 (en) * 2010-10-18 2014-11-04 Tokyo Electron Limited Using vacuum ultra-violet (VUV) data in microwave sources
KR101839776B1 (en) * 2011-02-18 2018-03-20 삼성디스플레이 주식회사 Plazma treatment apparatus
US8923356B1 (en) * 2011-10-04 2014-12-30 Kern Technologies, LLC. Gas laser pre-ionization optical monitoring and compensation
CN102446786B (en) * 2011-11-28 2013-12-04 上海华力微电子有限公司 Device monitoring method during semiconductor process
US9887071B2 (en) * 2011-12-16 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-zone EPD detectors
DE102012101717A1 (en) 2012-03-01 2013-09-05 Aixtron Se Method and device for controlling the surface temperature of a susceptor of a substrate coating device
US10515813B2 (en) * 2013-12-10 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for etching apparatus and etching-detection method
US9263849B2 (en) 2013-12-27 2016-02-16 Gerald L Kern Impedance matching system for slab type lasers
US20150219565A1 (en) * 2014-02-04 2015-08-06 Applied Materials, Inc. Application of in-line thickness metrology and chamber matching in display manufacturing
US10087518B2 (en) * 2014-08-13 2018-10-02 The Boeing Company Electrically reconfigurable deposition masks
US10879046B2 (en) * 2015-09-11 2020-12-29 Applied Materials, Inc. Substrate support with real time force and film stress control
US20170084426A1 (en) * 2015-09-23 2017-03-23 Lam Research Corporation Apparatus for determining process rate
CN109219863B (en) * 2016-06-03 2021-02-09 应用材料公司 Substrate distance monitoring
US10651017B2 (en) * 2016-06-30 2020-05-12 Tokyo Electron Limited Method for operation instability detection in a surface wave plasma source
US9972478B2 (en) 2016-09-16 2018-05-15 Lam Research Corporation Method and process of implementing machine learning in complex multivariate wafer processing equipment
US11251019B2 (en) * 2016-12-15 2022-02-15 Toyota Jidosha Kabushiki Kaisha Plasma device
KR20190137886A (en) * 2017-04-14 2019-12-11 아이오니어 엘엘씨 Methods and systems for measuring plasma release in plasma processing reactors
BE1025251B1 (en) * 2017-05-22 2018-12-18 Soleras Advanced Coatings Bvba Feedback system
US10508339B2 (en) * 2017-05-31 2019-12-17 Applied Materials, Inc. Blocker plate for use in a substrate process chamber
KR102013668B1 (en) * 2017-08-07 2019-08-26 세메스 주식회사 Apparatus for treating substrate and test method
US11114327B2 (en) * 2017-08-29 2021-09-07 Applied Materials, Inc. ESC substrate support with chucking force control
US10536130B2 (en) 2017-08-29 2020-01-14 Mks Instruments, Inc. Balancing RF circuit and control for a cross-coupled SIMO distribution network
TW201915474A (en) * 2017-09-01 2019-04-16 美商阿自倍爾北美研發公司 Apparatus and method for real-time non-invasive composition sensing and imaging
KR102009348B1 (en) * 2017-09-20 2019-08-09 주식회사 유진테크 Batch type plasma substrate processing apparatus
JP6863199B2 (en) 2017-09-25 2021-04-21 トヨタ自動車株式会社 Plasma processing equipment
KR20190036345A (en) * 2017-09-27 2019-04-04 삼성전자주식회사 Plasma processing apparatus and plasma processing method
US11670490B2 (en) * 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
KR102136660B1 (en) * 2019-04-22 2020-07-22 세메스 주식회사 Plasma diagnostic unit and plasma processing apparatus including the same
KR102375527B1 (en) * 2020-06-30 2022-03-18 주식회사 프라임솔루션 Plasma Etching Process Monitoring Device Using Machine Learning Model For Multi-channel Optical Emission Spectroscopy Analysis And Plasma Etching Process Monotoring Method Using The Same
US20220020617A1 (en) * 2020-07-17 2022-01-20 Applied Materials, Inc. Low open area and coupon endpoint detection
KR20220095677A (en) * 2020-12-30 2022-07-07 세메스 주식회사 Processing chamber including a temperature measuring unit and apparatus for processing a substrate including a temperature measuring unit
WO2022249973A1 (en) * 2021-05-26 2022-12-01 東京エレクトロン株式会社 Plasma monitoring system, plasma monitoring method, and monitoring device
JP2023001619A (en) * 2021-06-21 2023-01-06 東京エレクトロン株式会社 Measurement method and measurement device
CN116448841B (en) * 2023-06-13 2023-09-12 四川格瑞人康药房连锁有限公司 Electrochemical detection device for drug development

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE30505E (en) * 1972-05-12 1981-02-03 Lfe Corporation Process and material for manufacturing semiconductor devices
US4383885A (en) * 1980-02-06 1983-05-17 Bell Telephone Laboratories, Incorporated Reactive sputter etching of polysilicon utilizing a chlorine etch gas
JPH029115A (en) * 1988-06-28 1990-01-12 Mitsubishi Electric Corp Semiconductor manufacturing equipment
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5234526A (en) * 1991-05-24 1993-08-10 Lam Research Corporation Window for microwave plasma processing device
DE4123589C2 (en) * 1991-07-17 2001-03-29 Leybold Ag Device for measuring the light radiation from a plasma
US5200023A (en) * 1991-08-30 1993-04-06 International Business Machines Corp. Infrared thermographic method and apparatus for etch process monitoring and control
US5234529A (en) * 1991-10-10 1993-08-10 Johnson Wayne L Plasma generating apparatus employing capacitive shielding and process for using such apparatus
AU2003195A (en) * 1994-06-21 1996-01-04 Boc Group, Inc., The Improved power distribution for multiple electrode plasma systems using quarter wavelength transmission lines
WO1996041900A1 (en) * 1995-06-13 1996-12-27 Massively Parallel Instruments, Inc. Improved parallel ion optics and apparatus for high current low energy ion beams
US5691642A (en) * 1995-07-28 1997-11-25 Trielectrix Method and apparatus for characterizing a plasma using broadband microwave spectroscopic measurements
US5711851A (en) * 1996-07-12 1998-01-27 Micron Technology, Inc. Process for improving the performance of a temperature-sensitive etch process
JPH10294305A (en) * 1997-04-18 1998-11-04 Hitachi Ltd Production of semiconductor and semiconductor device
US6017437A (en) * 1997-08-22 2000-01-25 Cutek Research, Inc. Process chamber and method for depositing and/or removing material on a substrate
US6284149B1 (en) * 1998-09-18 2001-09-04 Applied Materials, Inc. High-density plasma etching of carbon-based low-k materials in a integrated circuit
JP5165825B2 (en) * 2000-01-10 2013-03-21 東京エレクトロン株式会社 Divided electrode assembly and plasma processing method.

Also Published As

Publication number Publication date
US7462335B2 (en) 2008-12-09
US20030038112A1 (en) 2003-02-27
JP2003529946A (en) 2003-10-07
US7018553B2 (en) 2006-03-28
WO2001076326A1 (en) 2001-10-11
JP4754757B2 (en) 2011-08-24
US20030201162A1 (en) 2003-10-30

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