AU2001252981A1 - Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions - Google Patents
Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructionsInfo
- Publication number
- AU2001252981A1 AU2001252981A1 AU2001252981A AU5298101A AU2001252981A1 AU 2001252981 A1 AU2001252981 A1 AU 2001252981A1 AU 2001252981 A AU2001252981 A AU 2001252981A AU 5298101 A AU5298101 A AU 5298101A AU 2001252981 A1 AU2001252981 A1 AU 2001252981A1
- Authority
- AU
- Australia
- Prior art keywords
- methods
- vapor deposition
- physical vapor
- forming aluminum
- sputtered films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S72/00—Metal deforming
- Y10S72/70—Deforming specified alloys or uncommon metal or bimetallic work
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19335400P | 2000-03-28 | 2000-03-28 | |
US60193354 | 2000-03-28 | ||
US09783377 | 2001-02-13 | ||
US09/783,377 US20010047838A1 (en) | 2000-03-28 | 2001-02-13 | Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions |
PCT/US2001/009813 WO2001073156A2 (en) | 2000-03-28 | 2001-03-27 | Method of forming aluminum targets |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001252981A1 true AU2001252981A1 (en) | 2001-10-08 |
Family
ID=26888912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001252981A Abandoned AU2001252981A1 (en) | 2000-03-28 | 2001-03-27 | Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions |
Country Status (8)
Country | Link |
---|---|
US (3) | US20010047838A1 (en) |
EP (1) | EP1268873A2 (en) |
JP (1) | JP2003533589A (en) |
KR (1) | KR20020092406A (en) |
CN (1) | CN1432070A (en) |
AU (1) | AU2001252981A1 (en) |
TW (1) | TW507014B (en) |
WO (1) | WO2001073156A2 (en) |
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JPH0864554A (en) | 1994-08-23 | 1996-03-08 | Mitsubishi Materials Corp | Sputtering target material for forming thin film of thin film transistor |
JPH08100255A (en) | 1994-09-30 | 1996-04-16 | Mitsubishi Materials Corp | Sputtering target material for forming thin film of thin film transistor |
US5590389A (en) * | 1994-12-23 | 1996-12-31 | Johnson Matthey Electronics, Inc. | Sputtering target with ultra-fine, oriented grains and method of making same |
US5850755A (en) * | 1995-02-08 | 1998-12-22 | Segal; Vladimir M. | Method and apparatus for intensive plastic deformation of flat billets |
US5600989A (en) * | 1995-06-14 | 1997-02-11 | Segal; Vladimir | Method of and apparatus for processing tungsten heavy alloys for kinetic energy penetrators |
US5650958A (en) * | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
US5764567A (en) * | 1996-11-27 | 1998-06-09 | International Business Machines Corporation | Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response |
US5923056A (en) * | 1996-10-10 | 1999-07-13 | Lucent Technologies Inc. | Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials |
FR2756572B1 (en) * | 1996-12-04 | 1999-01-08 | Pechiney Aluminium | ALUMINUM ALLOYS WITH HIGH RECRYSTALLIZATION TEMPERATURE USED IN CATHODE SPRAYING TARGETS |
US6451179B1 (en) * | 1997-01-30 | 2002-09-17 | Applied Materials, Inc. | Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma |
US6569270B2 (en) * | 1997-07-11 | 2003-05-27 | Honeywell International Inc. | Process for producing a metal article |
JPH1187068A (en) * | 1997-07-15 | 1999-03-30 | Tdk Corp | Organic el element and manufacture thereof |
US20020014406A1 (en) * | 1998-05-21 | 2002-02-07 | Hiroshi Takashima | Aluminum target material for sputtering and method for producing same |
JP2000176606A (en) | 1998-12-17 | 2000-06-27 | Sumitomo Chem Co Ltd | Production of high purity aluminum and alloy continuously cast material and cast material thereof and aluminum alloy single crystal target using it |
US6423161B1 (en) * | 1999-10-15 | 2002-07-23 | Honeywell International Inc. | High purity aluminum materials |
WO2001033643A1 (en) * | 1999-10-29 | 2001-05-10 | Ohio University | BAND GAP ENGINEERING OF AMORPHOUS Al-Ga-N ALLOYS |
US6878250B1 (en) * | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
US6399215B1 (en) * | 2000-03-28 | 2002-06-04 | The Regents Of The University Of California | Ultrafine-grained titanium for medical implants |
US6946039B1 (en) * | 2000-11-02 | 2005-09-20 | Honeywell International Inc. | Physical vapor deposition targets, and methods of fabricating metallic materials |
US6605199B2 (en) * | 2001-11-14 | 2003-08-12 | Praxair S.T. Technology, Inc. | Textured-metastable aluminum alloy sputter targets and method of manufacture |
US20040022662A1 (en) * | 2002-07-31 | 2004-02-05 | General Electric Company | Method for protecting articles, and related compositions |
-
2001
- 2001-02-13 US US09/783,377 patent/US20010047838A1/en not_active Abandoned
- 2001-03-27 CN CN01810327A patent/CN1432070A/en active Pending
- 2001-03-27 AU AU2001252981A patent/AU2001252981A1/en not_active Abandoned
- 2001-03-27 KR KR1020027012901A patent/KR20020092406A/en not_active Application Discontinuation
- 2001-03-27 EP EP01926448A patent/EP1268873A2/en not_active Withdrawn
- 2001-03-27 JP JP2001570866A patent/JP2003533589A/en not_active Withdrawn
- 2001-03-27 WO PCT/US2001/009813 patent/WO2001073156A2/en not_active Application Discontinuation
- 2001-05-29 TW TW090107393A patent/TW507014B/en not_active IP Right Cessation
-
2002
- 2002-07-11 US US10/194,023 patent/US20020174917A1/en not_active Abandoned
- 2002-07-11 US US10/194,022 patent/US7017382B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20020174916A1 (en) | 2002-11-28 |
JP2003533589A (en) | 2003-11-11 |
US7017382B2 (en) | 2006-03-28 |
WO2001073156A2 (en) | 2001-10-04 |
WO2001073156B1 (en) | 2002-03-28 |
US20010047838A1 (en) | 2001-12-06 |
TW507014B (en) | 2002-10-21 |
WO2001073156A3 (en) | 2002-02-21 |
US20020174917A1 (en) | 2002-11-28 |
KR20020092406A (en) | 2002-12-11 |
EP1268873A2 (en) | 2003-01-02 |
CN1432070A (en) | 2003-07-23 |
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