JP7424854B2 - Film deposition processing parts and film deposition equipment - Google Patents

Description

The present invention relates to an alloy sprayed film and a film forming apparatus.

There is a technique of forming a film on a substrate in a vacuum container using a sputtering method, CVD, or the like. At this time, the film may also adhere to parts for film forming processing (for example, adhesion prevention plates, etc.) other than the substrate provided in the vacuum container. If such a film is peeled off as particles from the film-forming processing component, the particles may enter the film and cause a decrease in the yield of film products.

For these reasons, there is a method of forming a sprayed film with a certain surface roughness on the surface of a part for film forming processing (for example, see Patent Document 1). By forming such a sprayed film on the surface of the film forming part, unnecessary film peeling from the film forming part can be effectively suppressed.

Japanese Patent Application Publication No. 2008-291299

However, when a material with relatively high film stress is selected as the material for the film to be formed on the substrate, or when film formation is performed for a long time and the film formed on the film forming processing parts becomes relatively thick. If the thermal sprayed film overcomes the stress of the film deposited on the thermal sprayed film, there is a possibility that the thermal sprayed film will peel off from the film-forming processing component together with the film. Therefore, thermal sprayed films formed on such film-forming parts are required to have better peeling resistance.

In view of the above circumstances, an object of the present invention is to provide a thermal sprayed alloy film that is more inhibited from peeling off from parts for film forming processing, and a film forming apparatus equipped with the thermal sprayed alloy film.

In order to achieve the above object, a thermal sprayed alloy film according to one embodiment of the present invention is a thermal sprayed film provided on the surface of a film forming part exposed to a film forming process atmosphere, and comprises aluminum, scandium, and hafnium. and at least one of the first elements.

With such a sprayed alloy film, even if a coating with high stress is deposited on the sprayed alloy film, the sprayed alloy film will be difficult to peel off from the parts for film-forming treatment.

In the above-mentioned alloy sprayed film, the above-mentioned sprayed film may contain, in addition to the above-mentioned first element, a second element of at least one of zirconium, titanium, and silicon.

Since such a sprayed alloy film contains at least one of the second elements of zirconium, titanium, and silicon in addition to the first element, the sprayed alloy film is difficult to peel off from the parts for film formation. .

In the above alloy sprayed film, the first element may be included in the above sprayed film in an amount of 0.05 wt% or more and 1.5 wt% or less.

In such a sprayed alloy film, since the first element is contained in the sprayed film in an amount of 0.05 wt% or more and 1.5 wt% or less, the sprayed alloy film is difficult to peel off from the parts for film formation.

In the above alloy sprayed film, the second element includes zirconium in the sprayed film at 0.1 wt% or more and 0.5 wt% or less, or titanium in the above sprayed film at 0.1 wt% or more and 3.0 wt% or less. Good too.

In such a sprayed alloy film, since the second element is contained in the sprayed film at the above concentration, the sprayed alloy film is difficult to peel off from the parts for film formation.

In the above-mentioned thermal sprayed alloy film, the film-forming processing component may be an adhesion prevention plate surrounding the film-forming processing atmosphere or a shield member surrounding the sputtering target.

Such an alloy sprayed film is difficult to peel off from the adhesion prevention plate surrounding the film-forming treatment atmosphere or the shield member surrounding the sputtering target.

In the above alloy sprayed film, a high melting point metal film may be formed on the substrate exposed to the above film forming treatment atmosphere.

With such a sprayed alloy film, even if a high melting point metal film is formed on the part for film formation, the sprayed alloy film will be difficult to peel off from the part for film formation.

In order to achieve the above object, a film forming apparatus according to one embodiment of the present invention includes a film forming source, a film forming source, a substrate support, parts for film forming processing, and a vacuum container.
The substrate support section faces the film forming source.
The film-forming processing component is arranged in a film-forming processing atmosphere between the film-forming source and the substrate support, or surrounding the film-forming source, and containing a first element of at least one of scandium and hafnium. A thermally sprayed alloy film having the above-mentioned structure is provided facing the above-mentioned film-forming treatment atmosphere.
The vacuum container accommodates the film forming source, the substrate support, and the film forming processing components.

With such a film forming apparatus, even if a coating with high stress is deposited on the sprayed alloy film, the sprayed alloy film will be difficult to peel off from the parts for film forming processing.

In the above film forming apparatus, the alloy sprayed film may contain, in addition to the first element, a second element of at least one of zirconium, titanium, and silicon.
Film deposition equipment.

Such a film forming apparatus contains at least one of the second elements of zirconium, titanium, and silicon in addition to the first element, making it difficult for the alloy sprayed film to peel off from the parts for film forming processing. .

As described above, according to the present invention, there is provided a sprayed alloy film that is more inhibited from peeling off from parts for film forming processing, and a film forming apparatus equipped with the sprayed alloy film.

FIG. 1 is a schematic cross-sectional view showing an example of a film forming apparatus. FIG. 2 is a schematic diagram showing a partial cross section of a part for film forming treatment that has been irradiated with an alloy sprayed film.

Embodiments of the present invention will be described below with reference to the drawings. In each drawing, XYZ axis coordinates may be introduced. In addition, the same members or members having the same function may be given the same reference numerals, and the description may be omitted as appropriate after the member has been described.

An example of a film forming apparatus in which the alloy sprayed film of this embodiment is utilized will be described. FIG. 1 is a schematic cross-sectional view showing an example of a film forming apparatus.

The film forming apparatus 1 includes a vacuum vessel 10, a support base 20, a sputtering target 30, parts for film forming processing 40, 41, 42, a magnetic circuit section 50, sprayed alloy films 60, 61, 62, and an exhaust gas. It includes a mechanism 70, a gas supply mechanism 75, and a power source 80. A substrate 21 that is a target object for film formation is installed on the support stand 20 .

The vacuum container 10 is a container that can maintain a reduced pressure state. The vacuum container 10 accommodates a support stand 20, a sputtering target 30, parts for film forming processing 40, 41, 42, and the like. An exhaust mechanism 70 such as a vacuum pump or a valve is connected to the vacuum container 10 through a pipe 71 . The atmosphere inside the vacuum container 10 is maintained at a predetermined pressure by the exhaust mechanism 70. A gas supply mechanism 75 such as a flow meter and a valve is installed in the vacuum container 10 through an introduction pipe 76 . The gas supply mechanism 75 supplies discharge gas into the vacuum container 10 . The discharge gas is, for example, an inert gas (Ar, Ne, He, etc.). Further, a pressure gauge may be installed in the vacuum container 10 to measure the pressure inside the vacuum container 10.

The support stand 20 is a substrate support part of the film forming apparatus 1. The support stand 20 is installed inside the vacuum container 10. The support stand 20 faces the sputtering target 30. The support stand 20 supports the substrate 21. In the support stand 20, the mounting surface on which the substrate 21 is mounted may be a conductor or an insulator. For example, an electrostatic chuck may be installed on the mounting surface. The support stand 20 may have a built-in temperature control mechanism that maintains the substrate 21 at a predetermined temperature. The substrate 21 may be changed as appropriate depending on the device to which it is applied, and may be, for example, an insulating substrate such as a glass substrate or a quartz substrate, a semiconductor substrate such as a silicon wafer, a metal substrate, or the like.

A sputtering target 30 (hereinafter referred to as target 30) is installed in vacuum container 10 with insulating spacer 11 in between. The target 30 is arranged to face the support base 20. The target 30 includes a target material 31 that is a target body, a base material 32, and a joining member 33. The target 30 is a film forming source of the film forming apparatus 1 .

The target material 31 has a sputtering surface 31s that is sputtered by plasma. The target material 31 is changed as appropriate depending on the composition of the film to be formed on the substrate 21. Target material 31 is metal, semimetal, or ceramic. For example, the target material 31 is made of high melting point metal such as tungsten (W), molybdenum (Mo), titanium (Ti), tungsten silicide (WSi), titanium nitride (TiN), silicon (Si), silicon carbide (SiC), etc. It is a semiconductor material such as. The target material is not limited to these metals and metalloids, but may also be silicon nitride (SiN) or the like. The planar shape of the target material is adjusted as appropriate in accordance with the planar shape of the substrate 21.

The base material 32 is a backing plate and is provided on the back surface of the target material 31. The base material 32 has portions 321 and 322 with different diameters. The base material 32 has a convex shape in which a portion 322 protrudes from a portion 321. In other words, in the base material 32, a step is formed by the portions 321 and 322. The outer diameter of the portion 322 is, for example, approximately the same as the diameter of the target material 31. A channel through which a refrigerant flows may be provided inside the base material 32.

The joining member 33 is provided between the target material 31 and the base material 32. The joining member 33 tightly joins the target material 31 and the base material 32. The joining member 33 is, for example, a brazing material such as indium.

The magnetic circuit section 50 is arranged on the back side of the target 30 on the opposite side to the support stand 20. The magnetic circuit section 50 includes a yoke 51 arranged parallel to the target 30 and a magnet 52 provided on the yoke 51. The magnet 52 is arranged so as to face the back surface of the target 30 on the opposite side to the sputtering surface 31s.

The magnetic field emitted from the magnet 52 leaks near the sputtering surface 31s, and electrons and the like in the plasma are captured by this leaked magnetic field. As a result, high-density plasma is formed near the sputtering surface 31s, and so-called magnetron sputtering is performed. The shape and number of the magnets 52 are adjusted as appropriate from the viewpoint of stability of discharge, in-plane distribution of the deposited layer on the substrate 21, or improvement in usage efficiency of the target 30.

The film forming processing component 40 is an annular shield member. The film-forming processing component 40 is made of metal, and is, for example, an earth shield whose potential is the ground potential. When the film forming apparatus 1 is viewed from above, the film forming processing components 40 surround the outer periphery of the target 30 . The film forming processing component 40 is placed in the vacuum vessel 10 along the outer periphery of the target 30 with the sputtering surface 31s of the target 30 open. The film-forming processing component 40 is fixed to the upper part of the vacuum container 10, for example. The shape of the film-forming processing component 40 is an example, and is not limited to the illustrated shape.

The material of the film forming processing component 40 is, for example, stainless steel, aluminum, or the like. A gap of approximately 0.1 mm to several mm is provided between the film forming processing component 40 and the target 30, for example. As a result, during film formation, due to the so-called Paschen's law, discharge is less likely to occur in the gap between the film-forming processing component 40 and the target 30, and plasma gathers near the sputtering surface 31s, maintaining stable plasma discharge.

The alloy sprayed film 60 is sprayed onto the film forming processing component 40 . For example, the alloy sprayed film 60 is formed on the surface of the film-forming processing component 40 that faces the film-forming processing atmosphere 12 .

The alloy sprayed film 60 includes aluminum (Al) and a first element of at least one of scandium (Sc) and hafnium (Hf) in addition to aluminum. Furthermore, the alloy sprayed film 60 may contain at least one of the second elements of zirconium (Zr) and titanium (Ti). Alternatively, silicon (Si) may be selected as the second element.

Here, the total amount of the first element of at least one of Sc and Hf is contained in the sprayed alloy film 60 at 0.05 wt% or more and 1.5 wt% or less. In this case, the alloy sprayed film 60 is any one of an Al-Sc alloy sprayed film, an Al-Hf alloy sprayed film, and an Al-Sc-Hf alloy sprayed film.

Further, when a second element is contained, in the Al-Sc-Zr alloy sprayed film or the Al-Hf-Zr alloy sprayed film, Zr may be contained in 0.1 wt% or more and 0.5 wt% or less, or, The Al-Sc-Ti alloy sprayed film or the Al-Hf-Ti alloy sprayed film may contain 0.1 wt% or more and 3 wt% or less of Ti, or the Al-Sc-Si alloy sprayed film or the Al-Hf- The Si alloy sprayed film may contain 0.5 wt% or more and 5 wt% or less of Si.

Here, if the weight percent of the first element is less than 0.05 wt%, recrystallization tends to occur in the sprayed alloy film, and the sprayed alloy film tends to become soft due to thermal history. As a result, the alloy sprayed film will succumb to the stress of the film deposited thereon, and there is a possibility that it will peel off together with the film from the film-forming processing component. On the other hand, if the weight % of the first element is greater than 1.5 wt %, the hardness of the material increases, making it difficult to process the material used for thermal spraying, which is not preferable.

Here, as a second element, if Ti is less than 0.1 wt%, the recrystallization suppressing effect will be small, and if it is more than 3 wt%, the influence of intermetallic compounds will become large, which is undesirable because the strength of the sprayed film will decrease. . Alternatively, if Zr is less than 0.1 wt%, the effect of suppressing recrystallization will be reduced, and if it is more than 0.5 wt%, the hardness of the thermal sprayed material will increase, making it unsuitable for processing the thermal sprayed material.

The film-forming processing component 41 is an anti-adhesion plate that surrounds the film-forming processing atmosphere 12 . The film-forming processing component 41 is provided, for example, along the inner wall of the vacuum container 10 from the top to the bottom of the vacuum container 10 . Further, the film-forming processing component 41 is placed from the middle of the vacuum container 10 toward the support stand 20 . The shape of the film-forming processing component 41 is an example, and is not limited to the illustrated shape. The film forming processing component 41 is made of metal, and its potential is, for example, a ground potential. The material of the film forming processing component 41 is, for example, stainless steel, aluminum, or the like.

The alloy sprayed film 61 is sprayed onto the film forming processing component 41 . For example, the alloy sprayed film 61 is formed on the surface of the film-forming processing component 41 which faces the film-forming processing atmosphere 12 . The components of the sprayed alloy film 61 are the same as those of the sprayed alloy film 60.

The film forming processing component 42 is a shutter that opens the target 30 toward the substrate 21 and shields the sputtering surface 31s. The film forming processing component 42 is provided, for example, substantially parallel to the sputtering surface 31s. The shape of the film-forming processing component 42 is an example, and is not limited to the illustrated shape. The film forming processing component 42 is made of metal, and its potential is, for example, a ground potential. The material of the film forming processing component 42 is, for example, stainless steel, aluminum, or the like.

The alloy sprayed film 62 is sprayed on the main surface of the film-forming processing component 42 facing the substrate 21 and the main surface facing the target 30 . The components of the sprayed alloy film 62 are the same as those of the sprayed alloy film 60.

A power source 80 is connected to the target 30 via a line 81. A power supply 80 supplies power to the target 30. The power source 80 may be a DC power source, a VHF power source, or an RF power source. When the power source 80 is a high frequency power source such as a VHF power source or an RF power source, a matching circuit may be provided on the line 81 between the power source 80 and the target 30.

When a discharge gas is introduced into the vacuum container 10 and power is applied to the target 30, a discharge occurs between the target 30 and the vacuum container 10 or the film forming processing component 41 due to capacitive coupling. As a result, plasma is formed near the sputtering surface 31s. Then, sputtering particles scatter toward the film-forming processing atmosphere 12 from the sputtering surface 31s exposed to the plasma.

As a result, a film made of the target material 31 is formed on the substrate 21. At the same time, since the parts 40, 41, and 42 for film forming processing are also exposed to the film forming processing atmosphere 12, films are deposited on the alloy sprayed films 60, 61, and 62 as well.

FIG. 2 is a schematic diagram showing a partial cross section of a part for film forming treatment that has been irradiated with an alloy sprayed film. Here, the film-forming processing component 4 indicates any of the film-forming processing components 40, 41, and 42, and the alloy sprayed film 6 indicates any of the alloy sprayed films 60, 61, and 62. During film formation, the surface 6s of the alloy sprayed film 6 is exposed to the film formation processing atmosphere 12.

The sprayed surface 4s of the film forming part 4 is blasted with insulating particles before the alloy sprayed film 6 is sprayed. For example, the sprayed surface 4s has an arithmetic mean roughness Ra of 3 μm or more. For example, if the arithmetic mean roughness Ra of the sprayed surface 4s is smaller than 3 μm, the adhesion between the film forming processing component 4 and the alloy sprayed film 6 will deteriorate, which is not preferable.

The alloy sprayed film 6 is formed on the sprayed surface 4s by any one of arc spraying, flame spraying, plasma spraying, cold spraying, and the like. Immediately after spraying, the alloy sprayed film 6 is, for example, an amorphous film. The thickness of the alloy sprayed film 6 is, for example, 100 μm or more and 400 μm or less. The surface 6s of the sprayed alloy film 6 has an arithmetic mean roughness Ra of 8 μm or more and 40 μm or less.

The film forming processing components 4 (shield member, adhesion prevention plate, shutter, etc.) generally do not have a water cooling mechanism. Therefore, when the film-forming processing component 4 is exposed to the film-forming processing atmosphere 12, its temperature may reach 350° C. or higher. In this embodiment, the temperature at which the film-forming process component 4 is heated to, for example, 350° C. or higher due to the thermal history of the film-forming process component 4 being exposed to the film-forming process atmosphere 12 is referred to as a "process temperature."

Under these conditions, the sprayed film formed on the film forming part 4 is a sprayed film made of pure Al (containing 99.00 wt% or more of Al) or a sprayed film made of Al-Cu alloy ( (hereinafter referred to as an Al sprayed film), recrystallization tends to occur in the sprayed film. As a result, the Al sprayed film becomes soft due to the thermal history, and eventually the Al sprayed film is peeled off from the film forming part 4 along with the coating.

Furthermore, when the film deposited on the Al sprayed film is a film with high stress, the adhesion of the Al sprayed film to the film forming processing component 4 is overcome by the stress, and the film is deposited along with the Al sprayed film. It may peel off from part 4.

In this way, when an Al sprayed film is selected as the sprayed film for the film forming part 4, the Al sprayed film is peeled off together with the coating due to thermal history, causing particle generation.

On the other hand, the sprayed alloy film 6 of this embodiment includes aluminum (Al) and at least one of the first elements of scandium (Sc) and hafnium (Hf). Furthermore, the alloy sprayed film 6 may contain at least one of the second elements of zirconium (Zr), titanium (Ti), and silicon (Si).

With such a sprayed alloy film 6, even if the sprayed alloy film 6 undergoes thermal history and reaches the process temperature, recrystallization is unlikely to occur in the sprayed alloy film 6. As a result, even if the thermal sprayed alloy film 6 receives a thermal history and reaches the process temperature, it maintains the desired hardness and becomes difficult to peel off from the film-forming processing component 4.

For example, when using an alloy sprayed film 6 made of Al-0.2wt%Sc, at a process temperature in the range of 260°C to 370°C, the Vickers hardness increases from 20HV to a range of 30HV to 70HV with the thermal history. There is an example. Alternatively, when using an alloy sprayed film 6 containing a mixture of Al and 0.1 wt% to 0.7% Sc, the recrystallization start temperature is about 350°C, but the recrystallization completion temperature is about 570°C. There are examples of temperatures reaching ℃. That is, by adding Sc to Al, recrystallization of the sprayed alloy film 6 is suppressed at about the process temperature, and the sprayed alloy film 6 maintains the desired hardness.

Table 1 is a table showing the shield life of the sprayed film when a WSi film and a SiN film are deposited on the Al sprayed film as a comparative example and the alloy sprayed film 6 of the present embodiment, respectively. Here, the shield life (kW/h) is the power (kW) input to the target 30 until the deposited thermal spray film peels off from the film forming processing part 4 when film forming is continued at the process temperature. It is the value multiplied by the film forming time (h). That is, the shield life is an index indicating the peeling resistance of the sprayed film against the stress of the film. The larger the shield life, the higher the peeling resistance of the sprayed film against the stress of the film. Note that a SUS304 plate was used as the substrate.

As shown in Table 1, when the coating is a WSi film, the shield life is 500 kW·h for the Al sprayed film, but increases to 600 kW·h for the alloy sprayed film 6. When the coating is a SiN film, the shield life is 250 kW·h for the Al sprayed film, but increases to 400 kW·h for the alloy sprayed film 6.

It was found that when the alloy sprayed film 6 was formed on the film-forming processing part 6 in this way, the peeling resistance of the film was significantly increased compared to when the Al sprayed film was formed on the film-forming processing part 4. . For example, an AlSc film formed by sputtering rather than thermal spraying is not preferable because it does not have an appropriate surface roughness and does not have a thickness sufficient to withstand the stress of the film deposited thereon.

Although the embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to the above-described embodiments and can be modified in various ways. Each embodiment is not necessarily an independent form, and can be combined to the extent technically possible.

1... Film forming apparatus 4, 40, 41, 42... Parts for film forming processing 4s... Sprayed surface 6, 60, 61, 62... Alloy sprayed film 6s... Surface 10... Vacuum vessel 11... Insulating spacer 12... Film forming processing atmosphere 20... Support stand 21... Substrate 30... Sputtering target (target)
31...Target material 31s...Sputtering surface 32...Base material 33...Joining member 50...Magnetic circuit part 51...Yoke 52...Magnet 70...Exhaust mechanism 71...Piping 75...Gas supply mechanism 76...Introduction pipe 80...Power supply 81...Line 321 , 322...part

Claims (8)

A shield member,
an alloy sprayed film provided on the surface of the shield member exposed to a film forming treatment atmosphere ;
Equipped with
The alloy sprayed film has aluminum and a first element of at least one of scandium and hafnium,
The first element is contained in the sprayed alloy film at 0.05 wt% or more and 1.5 wt% or less.
Parts for film forming processing . The film forming processing component according to claim 1,
In addition to the first element, the alloy sprayed film further includes a second element of at least one of zirconium and titanium.
Parts for film forming processing . The film forming processing component according to claim 1 or 2,
The arithmetic mean roughness Ra of the surface of the alloy sprayed film is 8 μm or more and 40 μm or less.
Parts for film forming processing. The film forming processing component according to claim 2 ,
As the second element, the alloy sprayed film contains 0.1 wt% or more and 0.5 wt% or less of zirconium, or 0.1 wt% or more and 3.0 wt% or less of titanium.
Parts for film forming processing . The film forming processing component according to any one of claims 1 to 4,
The shield member is an adhesion prevention plate that surrounds the film formation processing atmosphere, or a shield member that surrounds the sputtering target.
Parts for film forming processing . The film forming processing component according to any one of claims 1 to 5,
The alloy sprayed film provided on the surface of the shield member includes film forming materials such as tungsten (W), molybdenum (Mo), titanium (Ti), tungsten silicide (WSi), titanium nitride (TiN), silicon, A film made of silicon carbide or silicon nitride is formed.
Parts for film forming processing . A film formation source;
a substrate support part facing the film forming source;
A thermal sprayed alloy film containing aluminum and a first element of at least one of scandium and hafnium is formed in a film forming process atmosphere between the film forming source and the substrate support, or surrounding the film forming source. Film forming processing parts installed facing the processing atmosphere,
a vacuum container that accommodates the film-forming source, the substrate support, and the film-forming process components;
The first element is contained in the sprayed alloy film at 0.05 wt% or more and 1.5 wt% or less.
Film deposition equipment. The film forming apparatus according to claim 7,
The alloy sprayed film further includes, in addition to the first element, a second element of at least one of zirconium, titanium, and silicon.

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