AU2001249349A1 - Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam - Google Patents

Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam

Info

Publication number
AU2001249349A1
AU2001249349A1 AU2001249349A AU4934901A AU2001249349A1 AU 2001249349 A1 AU2001249349 A1 AU 2001249349A1 AU 2001249349 A AU2001249349 A AU 2001249349A AU 4934901 A AU4934901 A AU 4934901A AU 2001249349 A1 AU2001249349 A1 AU 2001249349A1
Authority
AU
Australia
Prior art keywords
silicon
phosphorus
steam
growing oxide
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001249349A
Inventor
James E. Rapp
Russell B. Rogenski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Techneglas LLC
Original Assignee
Techneglas LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Techneglas LLC filed Critical Techneglas LLC
Publication of AU2001249349A1 publication Critical patent/AU2001249349A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2001249349A 2000-03-29 2001-03-22 Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam Abandoned AU2001249349A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/538,558 US6461948B1 (en) 2000-03-29 2000-03-29 Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam
US09538558 2000-03-29
PCT/US2001/009200 WO2001073828A1 (en) 2000-03-29 2001-03-22 Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam

Publications (1)

Publication Number Publication Date
AU2001249349A1 true AU2001249349A1 (en) 2001-10-08

Family

ID=24147404

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001249349A Abandoned AU2001249349A1 (en) 2000-03-29 2001-03-22 Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam

Country Status (8)

Country Link
US (1) US6461948B1 (en)
EP (1) EP1281196A4 (en)
JP (1) JP2003529221A (en)
KR (1) KR100748282B1 (en)
CN (1) CN1248291C (en)
AU (1) AU2001249349A1 (en)
RU (1) RU2262773C2 (en)
WO (1) WO2001073828A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8691675B2 (en) * 2009-11-25 2014-04-08 International Business Machines Corporation Vapor phase deposition processes for doping silicon
CN102732967B (en) * 2012-06-01 2015-03-11 上饶光电高科技有限公司 Diffusion technology for phosphorus slurry of selective emitter crystalline silicon solar cell
RU2524140C1 (en) * 2013-01-10 2014-07-27 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) Diffusion of phosphorus from phosphorus nitride (p2n5)
RU2567405C2 (en) * 2014-01-31 2015-11-10 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) Production of power transistor source area
CN104517823B (en) * 2014-05-29 2019-01-04 上海华虹宏力半导体制造有限公司 Tungsten silicide film forming process
RU2612043C1 (en) * 2015-10-21 2017-03-02 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский политехнический университет" Method for doping semiconducting silicon with phosphorus to create p-n junctions
US20180076026A1 (en) 2016-09-14 2018-03-15 Applied Materials, Inc. Steam oxidation initiation for high aspect ratio conformal radical oxidation
CN111916347B (en) * 2020-08-13 2023-03-21 中国电子科技集团公司第四十四研究所 Phosphorus diffusion doping method for SOI (silicon on insulator) wafer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028150A (en) * 1973-05-03 1977-06-07 Ibm Corporation Method for making reliable MOSFET device
US3931056A (en) * 1974-08-26 1976-01-06 The Carborundum Company Solid diffusion sources for phosphorus doping containing silicon and zirconium pyrophosphates
JPS5626431A (en) * 1980-06-09 1981-03-14 Owens Illinois Inc Dopant source for diffusing in vapor phase phosphorus oxide
US4441247A (en) * 1981-06-29 1984-04-10 Intel Corporation Method of making MOS device by forming self-aligned polysilicon and tungsten composite gate
JPS6020510A (en) * 1983-07-13 1985-02-01 Matsushita Electronics Corp Diffusing method of impurity
JPS60211837A (en) * 1984-04-06 1985-10-24 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS61258415A (en) * 1986-05-09 1986-11-15 Hitachi Ltd Semiconductor wafer heat treatment
JPH0812849B2 (en) * 1991-05-31 1996-02-07 株式会社日立製作所 Solar cell manufacturing method

Also Published As

Publication number Publication date
CN1432192A (en) 2003-07-23
KR100748282B1 (en) 2007-08-09
EP1281196A4 (en) 2008-12-31
CN1248291C (en) 2006-03-29
KR20020093875A (en) 2002-12-16
JP2003529221A (en) 2003-09-30
WO2001073828A1 (en) 2001-10-04
US6461948B1 (en) 2002-10-08
RU2262773C2 (en) 2005-10-20
EP1281196A1 (en) 2003-02-05

Similar Documents

Publication Publication Date Title
AU2001279246A1 (en) Devices with optical gain in silicon
AU2001262348A1 (en) Lateral semiconductor device with low on-resistance and method of making the same
AU2002217545A1 (en) Semiconductor device and its manufacturing method
AU2002300573A1 (en) Photovoltaic Device and Method for Preparing the Same
AU2001247389A1 (en) Iii-v nitride substrate boule and method of making and using the same
AU2001256755A1 (en) Biosensor and method for manufacturing the same
AU2001286649A1 (en) Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
AU7825300A (en) Three dimensional device integration method and integrated device
AU2001272621A1 (en) Transparent textured substrate and methods for obtaining same
AU2002300570A1 (en) Photovoltaic Device and Method for Preparing the Same
EP1326270A4 (en) Silicon wafer and silicon epitaxial wafer and production methods therefor
EP1202350A3 (en) Semiconductor device and manufacturing method thereof
AU2002215014A1 (en) Method and device for the preparation of fuels
AU2001265967A1 (en) Cryptographic method and cryptographic device
AU1748701A (en) Method in the fabrication of a silicon bipolar transistor
AU2001249349A1 (en) Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam
IL136758A0 (en) Silicon with structured oxygen doping, its production and use
EP1174916A3 (en) Semiconductor device and semiconductor device manufacturing method
AU2001260774A1 (en) Bio-support and preparing method of the same
AU2001239776A1 (en) Silicon wafer manufacturing system and method
EP1174914A3 (en) Semiconductor device and semiconductor device manufacturing method
AU3230801A (en) Semiconductor device fabrication method and semiconductor device fabrication device
AU2001261005A1 (en) Immune mediators and related methods
AU2001265739A1 (en) Power semiconductor component and method for producing the same
AU2001242793A1 (en) Semiconductor device and fabrication method therefor