AU2001247628A1 - Method of fabricating flux concentrating layer for use with magnetoresistive random access memories - Google Patents

Method of fabricating flux concentrating layer for use with magnetoresistive random access memories

Info

Publication number
AU2001247628A1
AU2001247628A1 AU2001247628A AU4762801A AU2001247628A1 AU 2001247628 A1 AU2001247628 A1 AU 2001247628A1 AU 2001247628 A AU2001247628 A AU 2001247628A AU 4762801 A AU4762801 A AU 4762801A AU 2001247628 A1 AU2001247628 A1 AU 2001247628A1
Authority
AU
Australia
Prior art keywords
fabricating
random access
access memories
magnetoresistive random
flux concentrating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001247628A
Inventor
Eugene Youjun Chen
Mark Durlam
Gloria Kerszykowski
Kelly Wayne Kyler
Jon Michael Slaughter
Saied N. Tehrani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001247628A1 publication Critical patent/AU2001247628A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
AU2001247628A 2000-03-21 2001-03-21 Method of fabricating flux concentrating layer for use with magnetoresistive random access memories Abandoned AU2001247628A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/528,971 US6211090B1 (en) 2000-03-21 2000-03-21 Method of fabricating flux concentrating layer for use with magnetoresistive random access memories
US09/528,971 2000-03-21
PCT/US2001/008981 WO2001071777A2 (en) 2000-03-21 2001-03-21 Method of fabricating flux concentrating layer for use with magnetoresistive random access memories

Publications (1)

Publication Number Publication Date
AU2001247628A1 true AU2001247628A1 (en) 2001-10-03

Family

ID=24107980

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001247628A Abandoned AU2001247628A1 (en) 2000-03-21 2001-03-21 Method of fabricating flux concentrating layer for use with magnetoresistive random access memories

Country Status (7)

Country Link
US (1) US6211090B1 (en)
EP (1) EP1284010A2 (en)
JP (1) JP2003528458A (en)
KR (1) KR100801455B1 (en)
AU (1) AU2001247628A1 (en)
TW (1) TW492156B (en)
WO (1) WO2001071777A2 (en)

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Also Published As

Publication number Publication date
WO2001071777A2 (en) 2001-09-27
JP2003528458A (en) 2003-09-24
US6211090B1 (en) 2001-04-03
KR100801455B1 (en) 2008-02-11
WO2001071777A3 (en) 2002-11-07
KR20030014372A (en) 2003-02-17
EP1284010A2 (en) 2003-02-19
TW492156B (en) 2002-06-21

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