AU2001276046A1 - High density giant magnetoresistive memory cell - Google Patents

High density giant magnetoresistive memory cell

Info

Publication number
AU2001276046A1
AU2001276046A1 AU2001276046A AU7604601A AU2001276046A1 AU 2001276046 A1 AU2001276046 A1 AU 2001276046A1 AU 2001276046 A AU2001276046 A AU 2001276046A AU 7604601 A AU7604601 A AU 7604601A AU 2001276046 A1 AU2001276046 A1 AU 2001276046A1
Authority
AU
Australia
Prior art keywords
memory cell
high density
giant magnetoresistive
magnetoresistive memory
density giant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001276046A
Inventor
Richard Spitzer
E. James Torok
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Integrated Magnetoelectronics Corp
Original Assignee
Integrated Magnetoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Integrated Magnetoelectronics Corp filed Critical Integrated Magnetoelectronics Corp
Publication of AU2001276046A1 publication Critical patent/AU2001276046A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
AU2001276046A 2000-07-11 2001-06-27 High density giant magnetoresistive memory cell Abandoned AU2001276046A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US21733900P 2000-07-11 2000-07-11
US60/217,339 2000-07-11
US09/883,672 2001-06-18
US09/883,672 US6594175B2 (en) 2000-07-11 2001-06-18 High density giant magnetoresistive memory cell
PCT/US2001/041177 WO2002005318A2 (en) 2000-07-11 2001-06-27 High density giant magnetoresistive memory cell

Publications (1)

Publication Number Publication Date
AU2001276046A1 true AU2001276046A1 (en) 2002-01-21

Family

ID=26911850

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001276046A Abandoned AU2001276046A1 (en) 2000-07-11 2001-06-27 High density giant magnetoresistive memory cell

Country Status (5)

Country Link
US (1) US6594175B2 (en)
EP (1) EP1386322A2 (en)
JP (1) JP2004508698A (en)
AU (1) AU2001276046A1 (en)
WO (1) WO2002005318A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW544677B (en) * 2000-12-26 2003-08-01 Matsushita Electric Ind Co Ltd Magneto-resistance memory device
KR100462791B1 (en) * 2001-11-30 2004-12-20 한국과학기술연구원 A wordline with a magnetic field keeper for magnetic memory devices and sensors and method of manufacture therefor
US6885576B2 (en) * 2002-08-13 2005-04-26 Micron Technology, Inc. Closed flux magnetic memory
US6925000B2 (en) 2003-12-12 2005-08-02 Maglabs, Inc. Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture
CN1305525C (en) * 2004-03-27 2007-03-21 中国人民解放军第三军医大学 0157 bacterium gene engineering multivalence subunit vaccine of human and sensitive animals and its preparing method
US20050269612A1 (en) * 2004-05-11 2005-12-08 Integrated Magnetoelectronics Solid-state component based on current-induced magnetization reversal
US7061037B2 (en) * 2004-07-06 2006-06-13 Maglabs, Inc. Magnetic random access memory with multiple memory layers and improved memory cell selectivity
US7075818B2 (en) * 2004-08-23 2006-07-11 Maglabs, Inc. Magnetic random access memory with stacked memory layers having access lines for writing and reading
US7911830B2 (en) * 2007-05-17 2011-03-22 Integrated Magnetoelectronics Scalable nonvolatile memory
EP2539896B1 (en) * 2010-02-22 2016-10-19 Integrated Magnetoelectronics Corporation A high gmr structure with low drive fields
US9741923B2 (en) 2015-09-25 2017-08-22 Integrated Magnetoelectronics Corporation SpinRAM
JP6258452B1 (en) * 2016-12-02 2018-01-10 株式会社東芝 Magnetic memory
US10762940B2 (en) 2016-12-09 2020-09-01 Integrated Magnetoelectronics Corporation Narrow etched gaps or features in multi-period thin-film structures

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
US3972786A (en) 1974-06-28 1976-08-03 Ampex Corporation Mechanically enhanced magnetic memory
US4751677A (en) 1986-09-16 1988-06-14 Honeywell Inc. Differential arrangement magnetic memory cell
US5173873A (en) 1990-06-28 1992-12-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High speed magneto-resistive random access memory
US5420819A (en) * 1992-09-24 1995-05-30 Nonvolatile Electronics, Incorporated Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage
US5422621A (en) 1993-10-29 1995-06-06 International Business Machines Corporation Oriented granular giant magnetoresistance sensor
FR2712420B1 (en) 1993-11-08 1995-12-15 Commissariat Energie Atomique Magnetic read head with multilayer magnetoresistive element and concentrator and method of making the same.
US5650889A (en) 1994-02-07 1997-07-22 Hitachi, Ltd. Magnetic recording medium containing heavy rare gas atoms, and a magnetic transducing system using the medium
US5587943A (en) * 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation
US5654566A (en) 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation
US5652445A (en) 1995-04-21 1997-07-29 Johnson; Mark B. Hybrid hall effect device and method of operation
US5585986A (en) 1995-05-15 1996-12-17 International Business Machines Corporation Digital magnetoresistive sensor based on the giant magnetoresistance effect
US5741435A (en) * 1995-08-08 1998-04-21 Nano Systems, Inc. Magnetic memory having shape anisotropic magnetic elements
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5650958A (en) 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US5852574A (en) 1997-12-24 1998-12-22 Motorola, Inc. High density magnetoresistive random access memory device and operating method thereof
JPH11306750A (en) 1998-04-20 1999-11-05 Univ Kyoto Magnetic-type semiconductor integrated storage
US5969978A (en) 1998-09-30 1999-10-19 The United States Of America As Represented By The Secretary Of The Navy Read/write memory architecture employing closed ring elements
US6134138A (en) 1999-07-30 2000-10-17 Honeywell Inc. Method and apparatus for reading a magnetoresistive memory
US6483740B2 (en) * 2000-07-11 2002-11-19 Integrated Magnetoelectronics Corporation All metal giant magnetoresistive memory

Also Published As

Publication number Publication date
US20020009840A1 (en) 2002-01-24
US6594175B2 (en) 2003-07-15
EP1386322A2 (en) 2004-02-04
JP2004508698A (en) 2004-03-18
WO2002005318A2 (en) 2002-01-17
WO2002005318A3 (en) 2003-09-04

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