AU2001236507A1 - Transistor gate insulator layer incorporating superfine ceramic particles - Google Patents
Transistor gate insulator layer incorporating superfine ceramic particlesInfo
- Publication number
- AU2001236507A1 AU2001236507A1 AU2001236507A AU3650701A AU2001236507A1 AU 2001236507 A1 AU2001236507 A1 AU 2001236507A1 AU 2001236507 A AU2001236507 A AU 2001236507A AU 3650701 A AU3650701 A AU 3650701A AU 2001236507 A1 AU2001236507 A1 AU 2001236507A1
- Authority
- AU
- Australia
- Prior art keywords
- insulator layer
- ceramic particles
- gate insulator
- transistor gate
- layer incorporating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000919 ceramic Substances 0.000 title 1
- 239000012212 insulator Substances 0.000 title 1
- 239000002245 particle Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09619302 | 2000-07-19 | ||
US09/619,302 US6586791B1 (en) | 2000-07-19 | 2000-07-19 | Transistor insulator layer incorporating superfine ceramic particles |
PCT/US2001/002151 WO2002009190A1 (en) | 2000-07-19 | 2001-01-22 | Transistor gate insulator layer incorporating superfine ceramic particles |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001236507A1 true AU2001236507A1 (en) | 2002-02-05 |
Family
ID=24481326
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001236507A Abandoned AU2001236507A1 (en) | 2000-07-19 | 2001-01-22 | Transistor gate insulator layer incorporating superfine ceramic particles |
Country Status (6)
Country | Link |
---|---|
US (1) | US6586791B1 (en) |
EP (1) | EP1303882A1 (en) |
JP (1) | JP2004505452A (en) |
KR (1) | KR100732434B1 (en) |
AU (1) | AU2001236507A1 (en) |
WO (1) | WO2002009190A1 (en) |
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EP1149933A1 (en) * | 2000-04-28 | 2001-10-31 | STMicroelectronics S.r.l. | Deposition method of dielectric films having a low dielectric constant |
DE10126859A1 (en) * | 2001-06-01 | 2002-12-12 | Siemens Ag | Production of conducting structures used in organic FETs, illuminated diodes, organic diodes and integrated circuits comprises directly or indirectly forming conducting pathways |
EP1291932A3 (en) * | 2001-09-05 | 2006-10-18 | Konica Corporation | Organic thin-film semiconductor element and manufacturing method for the same |
US6891190B2 (en) * | 2002-05-23 | 2005-05-10 | Motorola, Inc. | Organic semiconductor device and method |
JPWO2004013914A1 (en) * | 2002-08-06 | 2006-09-28 | 株式会社ブリヂストン | Multilayer heterostructure film, method for producing the same, and optical element using the same |
DE10393887D2 (en) * | 2002-10-02 | 2005-08-25 | Kurz Leonhard Fa | Foil with organic semiconductors |
EP1434281A3 (en) * | 2002-12-26 | 2007-10-24 | Konica Minolta Holdings, Inc. | Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit |
US7279777B2 (en) * | 2003-05-08 | 2007-10-09 | 3M Innovative Properties Company | Organic polymers, laminates, and capacitors |
US7098525B2 (en) * | 2003-05-08 | 2006-08-29 | 3M Innovative Properties Company | Organic polymers, electronic devices, and methods |
US20040232408A1 (en) * | 2003-05-21 | 2004-11-25 | Heeger Alan J. | Bilayer high dielectric constant gate insulator |
KR100995451B1 (en) * | 2003-07-03 | 2010-11-18 | 삼성전자주식회사 | Organic Thin Film Transistor comprising Gate Insulator having Multi-layered Structure |
JP4194436B2 (en) * | 2003-07-14 | 2008-12-10 | キヤノン株式会社 | Field effect organic transistor |
JP2005079121A (en) * | 2003-08-29 | 2005-03-24 | Sumitomo Chemical Co Ltd | Polymer field effect transistor |
KR101001471B1 (en) * | 2003-10-10 | 2010-12-14 | 삼성전자주식회사 | Organic TFT having Enhanced Charge Carrier Mobility using Surface Relief Structure |
KR101012950B1 (en) * | 2003-10-15 | 2011-02-08 | 삼성전자주식회사 | Composition for Preparing Organic Insulator and the Organic Insulator |
KR20050058062A (en) * | 2003-12-11 | 2005-06-16 | 삼성전자주식회사 | Composition for preparing organic insulating film and the organic insulating film prepared by using the same |
JP4731840B2 (en) * | 2004-06-14 | 2011-07-27 | キヤノン株式会社 | Field effect transistor and manufacturing method thereof |
JP5108210B2 (en) * | 2004-06-21 | 2012-12-26 | 三星電子株式会社 | Organic insulating film composition, organic insulating film pattern forming method using the same, organic thin film transistor, and display element including the same |
DE102004031719A1 (en) * | 2004-06-30 | 2006-01-19 | Infineon Technologies Ag | Production process for an electrically functional layer structure for semiconductor technology forms and applies mask by gravure process and structures a material layer |
JP2006041135A (en) * | 2004-07-26 | 2006-02-09 | Sumitomo Bakelite Co Ltd | Electronic device and manufacturing method thereof |
KR101001441B1 (en) | 2004-08-17 | 2010-12-14 | 삼성전자주식회사 | Organic-Inorganic Metal Hybrid Material and Organic Insulator Composition Comprising the Same |
US7290315B2 (en) * | 2004-10-21 | 2007-11-06 | Intel Corporation | Method for making a passive device structure |
KR101130404B1 (en) * | 2005-02-16 | 2012-03-27 | 삼성전자주식회사 | Organic Insulator Composition Comprising High Dielectric Constant Insulator Dispersed in Hyperbranched Polymer and Organic Thin Film Transistor Using the Same |
US7511296B2 (en) | 2005-03-25 | 2009-03-31 | Canon Kabushiki Kaisha | Organic semiconductor device, field-effect transistor, and their manufacturing methods |
US7629269B2 (en) * | 2005-03-31 | 2009-12-08 | Intel Corporation | High-k thin film grain size control |
US20060220177A1 (en) * | 2005-03-31 | 2006-10-05 | Palanduz Cengiz A | Reduced porosity high-k thin film mixed grains for thin film capacitor applications |
US7375412B1 (en) * | 2005-03-31 | 2008-05-20 | Intel Corporation | iTFC with optimized C(T) |
US7453144B2 (en) * | 2005-06-29 | 2008-11-18 | Intel Corporation | Thin film capacitors and methods of making the same |
US20070040165A1 (en) * | 2005-08-16 | 2007-02-22 | Klaus Dimmler | Method of fabricating organic FETs |
JP2007103584A (en) * | 2005-10-03 | 2007-04-19 | Ricoh Co Ltd | Transistor element, display device and manufacturing methods thereof |
JP4860980B2 (en) * | 2005-10-20 | 2012-01-25 | ローム株式会社 | Motor drive circuit and disk device using the same |
GB0601008D0 (en) * | 2006-01-18 | 2006-03-01 | Qinetiq Ltd | Method of fabricating a semicondutor device |
TWI304620B (en) * | 2006-01-20 | 2008-12-21 | Ind Tech Res Inst | Dielectric layer, composition and method for forming the same |
TW200737520A (en) * | 2006-03-17 | 2007-10-01 | Univ Nat Chiao Tung | Gate dielectric structure and an organic thin film transistor based thereon |
KR101160489B1 (en) * | 2006-04-07 | 2012-06-26 | 엘지디스플레이 주식회사 | TFT array substrate and method for fabricating of the same |
US7407415B2 (en) * | 2006-06-07 | 2008-08-05 | International Business Machines Corporation | Crosstalk reduction in dual inline memory module (DIMM) connectors |
KR101255320B1 (en) * | 2006-06-30 | 2013-04-15 | 엘지디스플레이 주식회사 | Method For Fabricating Thin Film Transistor Array Substrate |
KR101255315B1 (en) * | 2006-06-30 | 2013-04-15 | 엘지디스플레이 주식회사 | Method For Fabricating Thin Film Transistor Array Substrate |
US8012564B2 (en) | 2006-07-24 | 2011-09-06 | Alcatel Lucent | Nanoparticle dispersions with low aggregation levels |
US20080075863A1 (en) * | 2006-08-16 | 2008-03-27 | Lexmark International, Inc. | Tunable dielectric compositions and methods |
US20100163623A1 (en) * | 2006-09-28 | 2010-07-01 | Ramos Mays | Colloidal suspensions |
KR101258294B1 (en) * | 2006-11-13 | 2013-04-25 | 삼성전자주식회사 | Composition for Preparing Organic Insulator with Crosslinking Property and the Organic Insulator Prepared by using the same |
TWI323034B (en) * | 2006-12-25 | 2010-04-01 | Ind Tech Res Inst | Electronic devices with hybrid high-k dielectric and fabrication methods thereof |
JP5200377B2 (en) * | 2006-12-28 | 2013-06-05 | 大日本印刷株式会社 | Organic semiconductor device |
US7994495B2 (en) * | 2008-01-16 | 2011-08-09 | Xerox Corporation | Organic thin film transistors |
KR101371998B1 (en) * | 2008-01-25 | 2014-03-07 | 삼성전자주식회사 | Composition for Preparing Insulator and Organic Insulator using the same |
US20090227719A1 (en) * | 2008-03-07 | 2009-09-10 | Industrial Technology Research Institute | Curable High Dielectric Constant Ink Composition and High Dielectric Film |
CN101587940B (en) * | 2008-05-20 | 2010-12-22 | 国家纳米科学中心 | Method for directly preparing pentacene thin film transistor on SiO2 dielectric layer |
JP2010034343A (en) * | 2008-07-30 | 2010-02-12 | Sumitomo Chemical Co Ltd | Method for manufacturing semiconductor device and semiconductor device |
CN102804439B (en) | 2009-05-25 | 2015-05-27 | 巴斯夫欧洲公司 | Crosslinkable dielectrics and methods of preparation and use thereof |
WO2012155116A1 (en) | 2011-05-12 | 2012-11-15 | Sabic Innovative Plastics Ip B.V. | Amorphous polycarbonate films for capacitors, methods of manufacture, and articles manufactured therefrom |
US8980053B2 (en) | 2012-03-30 | 2015-03-17 | Sabic Innovative Plastics Ip B.V. | Transformer paper and other non-conductive transformer components |
US9991076B2 (en) | 2013-01-28 | 2018-06-05 | Massachusetts Institute Of Technology | Electromechanical device |
US9659711B2 (en) | 2013-05-31 | 2017-05-23 | Sabic Global Technologies B.V. | Capacitor films, methods of manufacture, and articles manufactured therefrom |
US10077345B2 (en) | 2013-05-31 | 2018-09-18 | Sabic Global Technologies B.V. | Capacitor films, methods of manufacture, and articles manufactured therefrom |
EP3039061B1 (en) | 2013-08-28 | 2018-07-25 | SABIC Global Technologies B.V. | Polycarbonate films for capacitors, methods of manufacture, and articles manufactured therefrom |
CN109427911B (en) * | 2017-08-31 | 2021-12-14 | 昆山国显光电有限公司 | Flexible thin film transistor and preparation method thereof |
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US3660328A (en) | 1970-07-27 | 1972-05-02 | Pfizer | Dielectric films |
US4537865A (en) | 1984-07-11 | 1985-08-27 | Murata Manufacturing Co., Ltd. | Process for preparing a particulate ceramic material |
US4684678A (en) | 1985-05-30 | 1987-08-04 | Minnesota Mining And Manufacturing Company | Epoxy resin curing agent, process, and composition |
JPH01197993A (en) | 1988-02-02 | 1989-08-09 | Sharp Corp | Thin film electroluminescent element |
US5108598A (en) | 1990-02-14 | 1992-04-28 | Ultra Flow, Inc. | Horizontal motion quick-disconnect filter system with recirculating bypass |
US5572052A (en) | 1992-07-24 | 1996-11-05 | Mitsubishi Denki Kabushiki Kaisha | Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer |
US6344662B1 (en) * | 1997-03-25 | 2002-02-05 | International Business Machines Corporation | Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages |
US5981970A (en) * | 1997-03-25 | 1999-11-09 | International Business Machines Corporation | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
US5946551A (en) * | 1997-03-25 | 1999-08-31 | Dimitrakopoulos; Christos Dimitrios | Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric |
US6265749B1 (en) * | 1997-10-14 | 2001-07-24 | Advanced Micro Devices, Inc. | Metal silicide transistor gate spaced from a semiconductor substrate by a ceramic gate dielectric having a high dielectric constant |
US5888870A (en) * | 1997-10-22 | 1999-03-30 | Advanced Micro Devices, Inc. | Memory cell fabrication employing an interpoly gate dielectric arranged upon a polished floating gate |
US6436774B1 (en) * | 2001-01-26 | 2002-08-20 | Chartered Semiconductor Manufacturing Ltd. | Method for forming variable-K gate dielectric |
-
2000
- 2000-07-19 US US09/619,302 patent/US6586791B1/en not_active Expired - Fee Related
-
2001
- 2001-01-22 KR KR1020037000802A patent/KR100732434B1/en not_active IP Right Cessation
- 2001-01-22 EP EP01908662A patent/EP1303882A1/en not_active Withdrawn
- 2001-01-22 JP JP2002514796A patent/JP2004505452A/en not_active Withdrawn
- 2001-01-22 AU AU2001236507A patent/AU2001236507A1/en not_active Abandoned
- 2001-01-22 WO PCT/US2001/002151 patent/WO2002009190A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US6586791B1 (en) | 2003-07-01 |
EP1303882A1 (en) | 2003-04-23 |
JP2004505452A (en) | 2004-02-19 |
KR20030024793A (en) | 2003-03-26 |
KR100732434B1 (en) | 2007-06-27 |
WO2002009190A1 (en) | 2002-01-31 |
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