AU2000267388A1 - Method for manufacturing hetero junction bipolar transistor - Google Patents
Method for manufacturing hetero junction bipolar transistorInfo
- Publication number
- AU2000267388A1 AU2000267388A1 AU2000267388A AU6738800A AU2000267388A1 AU 2000267388 A1 AU2000267388 A1 AU 2000267388A1 AU 2000267388 A AU2000267388 A AU 2000267388A AU 6738800 A AU6738800 A AU 6738800A AU 2000267388 A1 AU2000267388 A1 AU 2000267388A1
- Authority
- AU
- Australia
- Prior art keywords
- bipolar transistor
- hetero junction
- junction bipolar
- manufacturing
- manufacturing hetero
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 125000005842 heteroatom Chemical group 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
- H01L29/66318—Heterojunction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
- H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR0042488 | 2000-07-24 | ||
| KR1020000042488A KR20020009125A (en) | 2000-07-24 | 2000-07-24 | Method for Manufacturing Hetero Junction Bipolar Transistor |
| PCT/KR2000/000974 WO2002009189A1 (en) | 2000-07-24 | 2000-08-29 | Method for manufacturing hetero junction bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2000267388A1 true AU2000267388A1 (en) | 2002-02-05 |
Family
ID=19679612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2000267388A Abandoned AU2000267388A1 (en) | 2000-07-24 | 2000-08-29 | Method for manufacturing hetero junction bipolar transistor |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6458668B1 (en) |
| KR (1) | KR20020009125A (en) |
| AU (1) | AU2000267388A1 (en) |
| WO (1) | WO2002009189A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10225525A1 (en) * | 2002-06-10 | 2003-12-18 | United Monolithic Semiconduct | Making hetero-bipolar transistor, etches mesa structure to first stopping layer, adds passivation layer, structures with second mask and etches to base layer |
| US20040099879A1 (en) * | 2002-11-27 | 2004-05-27 | Win Semiconductors Corp. | Heterojunction bipolar transistor power transistor |
| US7598148B1 (en) * | 2004-10-15 | 2009-10-06 | Fields Charles H | Non-self-aligned heterojunction bipolar transistor and a method for preparing a non-self-aligned heterojunction bipolar transistor |
| US7396731B1 (en) | 2004-10-15 | 2008-07-08 | Hrl Laboratories, Llc | Method for preparing a non-self-aligned heterojunction bipolar transistor with a small emitter-to-base spacing |
| US7875523B1 (en) | 2004-10-15 | 2011-01-25 | Hrl Laboratories, Llc | HBT with emitter electrode having planar side walls |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5252841A (en) * | 1991-05-09 | 1993-10-12 | Hughes Aircraft Company | Heterojunction bipolar transistor structure having low base-collector capacitance, and method of fabricating the same |
| EP0562272A3 (en) * | 1992-03-23 | 1994-05-25 | Texas Instruments Inc | Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same |
| JPH0645345A (en) * | 1992-07-23 | 1994-02-18 | Matsushita Electric Ind Co Ltd | Emitter electrode lead-out wiring and its manufacture |
| FR2736468B1 (en) * | 1995-07-07 | 1997-08-14 | Thomson Csf | BIPOLAR TRANSISTOR WITH OPTIMIZED STRUCTURE |
| JPH0992659A (en) * | 1995-09-27 | 1997-04-04 | Hitachi Ltd | Hetero junction bipolar transistor |
| JPH09181085A (en) * | 1995-12-21 | 1997-07-11 | Mitsubishi Electric Corp | Hetero-junction bipolar transistor and manufacture thereof |
| KR100220250B1 (en) * | 1996-10-19 | 1999-09-15 | 김영환 | Method of manufacturing an optoelectronic integrated circuit |
| JPH10178021A (en) * | 1996-12-18 | 1998-06-30 | Fujitsu Ltd | Heterobipolar transistor and manufacture thereof |
| US5859447A (en) * | 1997-05-09 | 1999-01-12 | Yang; Edward S. | Heterojunction bipolar transistor having heterostructure ballasting emitter |
| FR2764118B1 (en) * | 1997-05-30 | 2000-08-04 | Thomson Csf | STABILIZED BIPOLAR TRANSISTOR WITH ELECTRICAL INSULATING ELEMENTS |
| JPH10335345A (en) * | 1997-06-04 | 1998-12-18 | Mitsubishi Electric Corp | Heterojunction bipolar transistor and its manufacturing method |
| JPH11121463A (en) * | 1997-10-14 | 1999-04-30 | Fujitsu Ltd | Semiconductor device |
| JP3594482B2 (en) * | 1998-04-02 | 2004-12-02 | 三菱電機株式会社 | Heterojunction bipolar transistor |
| JP2000260784A (en) * | 1999-03-12 | 2000-09-22 | Sharp Corp | Heterojunction bipolar transistor, semiconductor device using the same, and manufacture of the heterojunction bipolar transistor |
-
2000
- 2000-07-24 KR KR1020000042488A patent/KR20020009125A/en active IP Right Grant
- 2000-08-29 WO PCT/KR2000/000974 patent/WO2002009189A1/en active Application Filing
- 2000-08-29 AU AU2000267388A patent/AU2000267388A1/en not_active Abandoned
- 2000-09-01 US US09/653,034 patent/US6458668B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002009189A1 (en) | 2002-01-31 |
| KR20020009125A (en) | 2002-02-01 |
| US6458668B1 (en) | 2002-10-01 |
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