ATE74230T1 - Monolithischer optokoppler. - Google Patents

Monolithischer optokoppler.

Info

Publication number
ATE74230T1
ATE74230T1 AT88119766T AT88119766T ATE74230T1 AT E74230 T1 ATE74230 T1 AT E74230T1 AT 88119766 T AT88119766 T AT 88119766T AT 88119766 T AT88119766 T AT 88119766T AT E74230 T1 ATE74230 T1 AT E74230T1
Authority
AT
Austria
Prior art keywords
components
screening member
opto
monolithic
monolithic optocoupler
Prior art date
Application number
AT88119766T
Other languages
English (en)
Inventor
Sture Goeransson
Tomas Hidman
Original Assignee
Asea Brown Boveri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri filed Critical Asea Brown Boveri
Application granted granted Critical
Publication of ATE74230T1 publication Critical patent/ATE74230T1/de

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
    • H04B10/801—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water using optical interconnects, e.g. light coupled isolators, circuit board interconnections
    • H04B10/802—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water using optical interconnects, e.g. light coupled isolators, circuit board interconnections for isolation, e.g. using optocouplers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4246—Bidirectionally operating package structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/18—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Networks Using Active Elements (AREA)
AT88119766T 1987-12-02 1988-11-26 Monolithischer optokoppler. ATE74230T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE8704822A SE461491B (sv) 1987-12-02 1987-12-02 Monolitisk optokopplare
EP88119766A EP0318883B1 (de) 1987-12-02 1988-11-26 Monolithischer Optokoppler

Publications (1)

Publication Number Publication Date
ATE74230T1 true ATE74230T1 (de) 1992-04-15

Family

ID=20370479

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88119766T ATE74230T1 (de) 1987-12-02 1988-11-26 Monolithischer optokoppler.

Country Status (6)

Country Link
US (1) US4933561A (de)
EP (1) EP0318883B1 (de)
JP (1) JPH01196183A (de)
AT (1) ATE74230T1 (de)
DE (1) DE3869566D1 (de)
SE (1) SE461491B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5357122A (en) * 1991-09-05 1994-10-18 Sony Corporation Three-dimensional optical-electronic integrated circuit device with raised sections
SE469204B (sv) * 1991-10-01 1993-05-24 Asea Brown Boveri Monolitisk optokopplare
US5237434A (en) * 1991-11-05 1993-08-17 Mcnc Microelectronic module having optical and electrical interconnects
JP2513976B2 (ja) * 1991-12-13 1996-07-10 エイ・ティ・アンド・ティ・コーポレーション 複数の球状部品の被覆方法
US5285078A (en) * 1992-01-24 1994-02-08 Nippon Steel Corporation Light emitting element with employment of porous silicon and optical device utilizing light emitting element
US5321294A (en) * 1992-08-31 1994-06-14 Matsushita Electric Industrial Co., Ltd. Shift register having optically bistable elements coupled by an optical waveguide layer
JPH0715030A (ja) * 1993-06-07 1995-01-17 Motorola Inc 線形集積光結合素子およびその製造方法
US5438210A (en) * 1993-10-22 1995-08-01 Worley; Eugene R. Optical isolation connections using integrated circuit techniques
ES2102937B1 (es) * 1994-03-07 1998-04-01 Telefonica Nacional Espana Co Circuito transmisor-receptor.
JP3505488B2 (ja) * 1999-10-12 2004-03-08 古河電気工業株式会社 光モジュール
EP1335507B1 (de) * 2002-01-31 2005-09-14 STMicroelectronics S.r.l. Verfahren und Einrichtung zur hervorragenden galvanischen Isolierung zwischen zwei Niederspannungsschaltungen in einer intergrierten Opto-Isolator-Einrichtung
JP4553026B2 (ja) * 2008-03-27 2010-09-29 富士ゼロックス株式会社 光伝送装置
US20190157508A1 (en) * 2016-05-17 2019-05-23 The University Of Hong Kong Light-emitting diodes (leds) with monolithically-integrated photodetectors for in situ real-time intensity monitoring

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436548A (en) * 1964-06-29 1969-04-01 Texas Instruments Inc Combination p-n junction light emitter and photocell having electrostatic shielding
DE1614865A1 (de) * 1967-09-27 1970-12-23 Telefunken Patent Optoelektronische Halbleiteranordnung
US3748480A (en) * 1970-11-02 1973-07-24 Motorola Inc Monolithic coupling device including light emitter and light sensor
US3818451A (en) * 1972-03-15 1974-06-18 Motorola Inc Light-emitting and light-receiving logic array
US3881113A (en) * 1973-12-26 1975-04-29 Ibm Integrated optically coupled light emitter and sensor
JPS5250184A (en) * 1975-10-20 1977-04-21 Matsushita Electric Ind Co Ltd Photo coupler
US4021834A (en) * 1975-12-31 1977-05-03 The United States Of America As Represented By The Secretary Of The Army Radiation-resistant integrated optical signal communicating device
US4112308A (en) * 1976-03-29 1978-09-05 Burr-Brown Research Corporation Optical coupling system
US4104533A (en) * 1977-02-28 1978-08-01 The United States Of America As Represented By The Secretary Of The Navy Wideband optical isolator
US4212020A (en) * 1978-07-21 1980-07-08 California Institute Of Technology Solid state electro-optical devices on a semi-insulating substrate
US4274104A (en) * 1979-05-21 1981-06-16 International Business Machines Corporation Electrooptical integrated circuit communication
JPS56131973A (en) * 1980-03-19 1981-10-15 Matsushita Electronics Corp Luminiscent device
JPS5967671A (ja) * 1982-10-12 1984-04-17 Nec Corp 発光受光素子
JPS59180514A (ja) * 1983-03-31 1984-10-13 Toshiba Corp 光受信モジユ−ル
FR2562328B1 (fr) * 1984-03-30 1987-11-27 Menigaux Louis Procede de fabrication d'un dispositif optique integre monolithique comprenant un laser a semi-conducteur et dispositif obtenu par ce procede
JPS61159776A (ja) * 1985-01-04 1986-07-19 Oki Electric Ind Co Ltd 光制御非直線素子
JPS6223181A (ja) * 1985-07-23 1987-01-31 Matsushita Electric Ind Co Ltd 光集積化素子

Also Published As

Publication number Publication date
SE461491B (sv) 1990-02-19
JPH01196183A (ja) 1989-08-07
EP0318883A1 (de) 1989-06-07
US4933561A (en) 1990-06-12
SE8704822D0 (sv) 1987-12-02
DE3869566D1 (de) 1992-04-30
EP0318883B1 (de) 1992-03-25
SE8704822L (sv) 1989-06-03

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee