ATE56103T1 - Detektoranordnung mit vorverstaerker in der brennebene. - Google Patents

Detektoranordnung mit vorverstaerker in der brennebene.

Info

Publication number
ATE56103T1
ATE56103T1 AT85900520T AT85900520T ATE56103T1 AT E56103 T1 ATE56103 T1 AT E56103T1 AT 85900520 T AT85900520 T AT 85900520T AT 85900520 T AT85900520 T AT 85900520T AT E56103 T1 ATE56103 T1 AT E56103T1
Authority
AT
Austria
Prior art keywords
focal plane
amplifier
mosfet transistors
preamplifier
implanted
Prior art date
Application number
AT85900520T
Other languages
English (en)
Inventor
Walter F Bridgewater
Robert E Decaro
Roger Larson
Llewellyn E Wall
Original Assignee
Irvine Sensors Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Irvine Sensors Corp filed Critical Irvine Sensors Corp
Application granted granted Critical
Publication of ATE56103T1 publication Critical patent/ATE56103T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/162—FETs are biased in the weak inversion region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Fire-Detection Mechanisms (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
AT85900520T 1983-12-05 1984-11-21 Detektoranordnung mit vorverstaerker in der brennebene. ATE56103T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US06/558,099 US4555623A (en) 1983-12-05 1983-12-05 Pre-amplifier in focal plane detector array
EP85900520A EP0165312B1 (de) 1983-12-05 1984-11-21 Detektoranordnung mit vorverstärker in der brennebene
PCT/US1984/001931 WO1985002713A1 (en) 1983-12-05 1984-11-21 Pre-amplifier in focal plane detector array

Publications (1)

Publication Number Publication Date
ATE56103T1 true ATE56103T1 (de) 1990-09-15

Family

ID=24228209

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85900520T ATE56103T1 (de) 1983-12-05 1984-11-21 Detektoranordnung mit vorverstaerker in der brennebene.

Country Status (6)

Country Link
US (1) US4555623A (de)
EP (1) EP0165312B1 (de)
JP (1) JPS61500636A (de)
AT (1) ATE56103T1 (de)
DE (1) DE3483102D1 (de)
WO (1) WO1985002713A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4806761A (en) * 1985-04-08 1989-02-21 Irvine Sensors Corporation Thermal imager incorporating electronics module having focal plane sensor mosaic
EP0216924A1 (de) * 1985-04-08 1987-04-08 Irvine Sensors Corporation Thermische bildlesevorrichtung mit einem sensor in einem elektronischen modul
GB8625409D0 (en) * 1986-10-23 1986-11-26 Rca Corp Switchable mode amplifier
US4779005A (en) * 1987-05-11 1988-10-18 Irvine Sensors Corporation Multiple detector viewing of pixels using parallel time delay and integration circuitry
US4868902A (en) * 1988-02-03 1989-09-19 Hughes Aircraft Company GaAs capacitive feedback transimpedance amplifier
US5289027A (en) * 1988-12-09 1994-02-22 Hughes Aircraft Company Ultrathin submicron MOSFET with intrinsic channel
US4929913A (en) * 1989-08-14 1990-05-29 Hughes Aircraft Company GaAs focal plane array readout
DE69218755T2 (de) * 1992-01-24 1997-07-10 Rockwell International Corp Ausleseverstärker für starrende Infrarotbildebenenanlage
GB2273837B (en) * 1992-12-11 1996-03-13 Marconi Gec Ltd Amplifier devices
US5412335A (en) * 1994-01-14 1995-05-02 Motorola, Inc. Area-efficient current-input filter, virtual ground circuit used in same, and method therefor
US5929434A (en) * 1997-08-13 1999-07-27 Rockwell Science Center, Llc Ultra-low noise high bandwidth interface circuit for single-photon readout of photodetectors
US6194966B1 (en) 1999-02-12 2001-02-27 Tritech Microelectronics, Ltd. Cmos class ab operational amplifier operating from a single 1.5v cell
DE19907970A1 (de) * 1999-02-24 2000-08-31 Bosch Gmbh Robert Lichtsensor
US6157259A (en) * 1999-04-15 2000-12-05 Tritech Microelectronics, Ltd. Biasing and sizing of the MOS transistor in weak inversion for low voltage applications
US6731160B1 (en) * 1999-11-11 2004-05-04 Broadcom Corporation Adjustable bandwidth high pass filter for large input signal, low supply voltage applications
US6696892B1 (en) * 1999-11-11 2004-02-24 Broadcom Corporation Large dynamic range programmable gain attenuator
US6680640B1 (en) * 1999-11-11 2004-01-20 Broadcom Corporation High linearity large bandwidth, switch insensitive, programmable gain attenuator
US6538245B1 (en) * 2000-10-26 2003-03-25 Rockwell Science Center, Llc. Amplified CMOS transducer for single photon read-out of photodetectors
US8114591B2 (en) 2001-03-09 2012-02-14 Dna Electronics Ltd. Sensing apparatus and method
GB0105831D0 (en) * 2001-03-09 2001-04-25 Toumaz Technology Ltd Method for dna sequencing utilising enzyme linked field effect transistors
GB0201260D0 (en) * 2002-01-21 2002-03-06 Europ Org For Nuclear Research A sensing and imaging device
US6819183B1 (en) * 2003-05-23 2004-11-16 Qualcomm, Incorporated Temperature and process compensation of MOSFET operating in sub-threshold mode
JP2008506945A (ja) * 2004-07-14 2008-03-06 オーボテック メディカル ソリューションズ リミティド 放射線検出器ヘッド
US7626460B2 (en) * 2007-10-30 2009-12-01 Raytheon Company Low noise, low power and high bandwidth capacitive feedback trans-impedance amplifier with differential FET input and bipolar emitter follower feedback
RU2703823C1 (ru) * 2018-12-21 2019-10-22 Акционерное общество "ЛОМО" Устройство для усиления и предварительной обработки импульсов с инфракрасного фотодиода
CN113396537B (zh) * 2019-04-30 2024-04-09 华为技术有限公司 一种放大器及放大装置
CN110138376B (zh) * 2019-05-21 2023-02-24 电子科技大学 一种应用于非制冷红外焦平面读出电路的坏行保护电路

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JPS51135240A (en) * 1975-05-19 1976-11-24 Toyo Noki Kk Lifting conveyor of beet harvester
US4092611A (en) * 1977-05-06 1978-05-30 National Semiconductor Corporation Adaptively biased differential operational amplifier for photo diode
JPS5855881B2 (ja) * 1977-08-30 1983-12-12 松下電工株式会社 人工木質単板の製法
JPS5855882B2 (ja) * 1977-10-31 1983-12-12 松下電工株式会社 人工木質単板の製法
US4201947A (en) * 1978-02-10 1980-05-06 Rca Corporation Long-tailed-pair connections of MOSFET's operated in sub-threshold region
JPS588156B2 (ja) * 1979-01-18 1983-02-14 松下電器産業株式会社 電子部品の装着方法
JPS5565441A (en) * 1978-11-09 1980-05-16 Toshiba Corp Direct mounting
JPS55118690A (en) * 1979-03-05 1980-09-11 Matsushita Electric Industrial Co Ltd Device for carrying electronic part
JPS5789535A (en) * 1980-11-20 1982-06-03 Sanyo Electric Co Ltd Device for correcting mounted posture of part
US4431971A (en) * 1981-08-17 1984-02-14 American Microsystems, Incorporated Dynamic operational amplifier
US4433282A (en) * 1981-12-08 1984-02-21 Intersil Monolithic voltage divider
JPS58161604A (ja) * 1982-03-16 1983-09-26 Bridgestone Corp ラジアルタイヤ
JPS58196099A (ja) * 1982-05-11 1983-11-15 松下電器産業株式会社 電子部品装着装置
DE3374107D1 (en) * 1982-07-09 1987-11-19 Motorola Inc Infra-red receiver front end

Also Published As

Publication number Publication date
JPS61500636A (ja) 1986-04-03
DE3483102D1 (de) 1990-10-04
EP0165312A4 (de) 1986-05-12
EP0165312A1 (de) 1985-12-27
US4555623A (en) 1985-11-26
EP0165312B1 (de) 1990-08-29
WO1985002713A1 (en) 1985-06-20

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties