ATE555499T1 - N-kanal-esd-klemme mit verbesserter leistung - Google Patents

N-kanal-esd-klemme mit verbesserter leistung

Info

Publication number
ATE555499T1
ATE555499T1 AT07841332T AT07841332T ATE555499T1 AT E555499 T1 ATE555499 T1 AT E555499T1 AT 07841332 T AT07841332 T AT 07841332T AT 07841332 T AT07841332 T AT 07841332T AT E555499 T1 ATE555499 T1 AT E555499T1
Authority
AT
Austria
Prior art keywords
esd
nfet
gate
supply node
nfets
Prior art date
Application number
AT07841332T
Other languages
English (en)
Inventor
Eugene Worley
Vivek Mohan
Reza Jalilizeinali
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Application granted granted Critical
Publication of ATE555499T1 publication Critical patent/ATE555499T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
AT07841332T 2006-08-24 2007-08-24 N-kanal-esd-klemme mit verbesserter leistung ATE555499T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US84027506P 2006-08-24 2006-08-24
US11/738,336 US7724485B2 (en) 2006-08-24 2007-04-20 N-channel ESD clamp with improved performance
PCT/US2007/076763 WO2008024973A2 (en) 2006-08-24 2007-08-24 N-channel esd clamp with improved performance

Publications (1)

Publication Number Publication Date
ATE555499T1 true ATE555499T1 (de) 2012-05-15

Family

ID=39107719

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07841332T ATE555499T1 (de) 2006-08-24 2007-08-24 N-kanal-esd-klemme mit verbesserter leistung

Country Status (8)

Country Link
US (1) US7724485B2 (de)
EP (1) EP2057682B1 (de)
JP (1) JP5074500B2 (de)
KR (1) KR101109283B1 (de)
CN (1) CN101506976B (de)
AT (1) ATE555499T1 (de)
TW (1) TW200820414A (de)
WO (1) WO2008024973A2 (de)

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US8064175B2 (en) 2005-09-15 2011-11-22 Rambus Inc. Power supply shunt
US8130481B2 (en) * 2007-08-08 2012-03-06 Texas Instruments Incorporated Electrostatic discharge trigger circuits for self-protecting cascode stages
US20090268359A1 (en) * 2008-04-25 2009-10-29 International Business Machines Corporation Electrostatic discharge power clamp with improved electrical overstress robustness
TWI382290B (zh) * 2008-08-14 2013-01-11 Realtek Semiconductor Corp 靜電保護電路
US8760827B2 (en) * 2009-04-15 2014-06-24 International Business Machines Corporation Robust ESD protection circuit, method and design structure for tolerant and failsafe designs
TWI387093B (zh) * 2009-08-26 2013-02-21 Faraday Tech Corp 利用低壓元件實現的低漏電高壓電源靜電放電保護電路
CN102013672B (zh) * 2009-09-08 2014-04-16 智原科技股份有限公司 利用低压元件实现的低漏电高压电源静电放电保护电路
US8345394B2 (en) * 2009-10-05 2013-01-01 Analog Devices, Inc. ESD protection circuit for a switching power converter
US8422180B2 (en) * 2009-12-17 2013-04-16 Faraday Technology Corp. High-voltage-tolerant ESD clamp circuit with low leakage current fabricated by low-voltage CMOS process
US8217703B2 (en) 2010-06-30 2012-07-10 Analog Devices, Inc. Low power fast level shifter
US9013842B2 (en) 2011-01-10 2015-04-21 Infineon Technologies Ag Semiconductor ESD circuit and method
US8670219B2 (en) * 2011-06-16 2014-03-11 Monolithic Power Systems, Inc. High-voltage devices with integrated over-voltage protection and associated methods
US9013938B1 (en) 2011-12-02 2015-04-21 Cypress Semiconductor Corporation Systems and methods for discharging load capacitance circuits
US8929040B2 (en) 2013-01-31 2015-01-06 International Business Machines Corporation ESD protection device for SST transmitter
KR102078340B1 (ko) * 2013-07-17 2020-02-18 삼성디스플레이 주식회사 정전기 보호 회로 및 이를 구비한 전자 장치
US20150084702A1 (en) * 2013-09-26 2015-03-26 Triquint Semiconductor, Inc. Electrostatic discharge (esd) circuitry
WO2015065310A1 (en) * 2013-10-28 2015-05-07 Intel Corporation Mesh performance improvement using dual voltage data transfer
US9413169B2 (en) 2014-04-02 2016-08-09 Globalfoundries Inc. Electrostatic discharge protection circuit with a fail-safe mechanism
US9425185B2 (en) 2014-05-29 2016-08-23 Globalfoundries Inc. Self-healing electrostatic discharge power clamp
US9537581B2 (en) * 2014-06-30 2017-01-03 Silicon Laboratories Inc. Isolator including bi-directional regulator
US10630075B2 (en) 2015-10-30 2020-04-21 Intel IP Corporation Multi-level output circuit having centralized ESD protection
GB2547730B (en) * 2016-02-26 2018-08-01 Cirrus Logic Int Semiconductor Ltd Clamping audio signal paths
US10340687B2 (en) 2016-03-07 2019-07-02 Texas Instruments Incorporated ESD protection circuit and method with high immunity to hot plug insertion and other transient events
US10170460B2 (en) 2017-02-28 2019-01-01 International Business Machines Corporation Voltage balanced stacked clamp
CN116314177A (zh) 2017-03-29 2023-06-23 意法半导体国际有限公司 使用遂穿场效应晶体管和碰撞电离mosfet器件的静电放电保护电路
TW201929182A (zh) 2017-12-27 2019-07-16 晨星半導體股份有限公司 靜電放電保護裝置
US11063429B2 (en) 2018-04-12 2021-07-13 Stmicroelectronics International N.V. Low leakage MOSFET supply clamp for electrostatic discharge (ESD) protection
US10944257B2 (en) 2018-04-13 2021-03-09 Stmicroelectronics International N.V. Integrated silicon controlled rectifier (SCR) and a low leakage SCR supply clamp for electrostatic discharge (ESP) protection
US11088540B2 (en) * 2018-10-30 2021-08-10 Semiconductor Components Industries, Llc Switch circuit with high voltage protection that reduces leakage currents
US11004843B2 (en) * 2019-01-18 2021-05-11 Nxp Usa, Inc. Switch control circuit for a power switch with electrostatic discharge (ESD) protection
US10642303B1 (en) * 2019-03-14 2020-05-05 Nxp Usa, Inc. Fast-enable current source
JP7110162B2 (ja) 2019-09-13 2022-08-01 株式会社東芝 保護回路
US10854604B1 (en) * 2019-09-20 2020-12-01 Qualcomm Incorporated Offset gate contact
TWI878454B (zh) * 2020-02-14 2025-04-01 美商賽納波狄克公司 用於cmos電路的靜電放電(esd)保護
CN113270858A (zh) * 2020-02-14 2021-08-17 辛纳普蒂克斯公司 用于cmos电路的静电放电（esd）保护
DE102020132568A1 (de) * 2020-03-31 2021-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Esd-schutzschaltung zum und zugehöriges betriebsverfahren
TWI769108B (zh) * 2021-11-04 2022-06-21 瑞昱半導體股份有限公司 靜電放電保護電路

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JPH0897362A (ja) * 1994-09-28 1996-04-12 Nittetsu Semiconductor Kk 半導体集積回路の電源保護回路
US5631793A (en) 1995-09-05 1997-05-20 Winbond Electronics Corporation Capacitor-couple electrostatic discharge protection circuit
US6075686A (en) * 1997-07-09 2000-06-13 Industrial Technology Research Institute ESD protection circuit for mixed mode integrated circuits with separated power pins
TW431042B (en) * 1999-05-18 2001-04-21 Sunplus Technology Co Ltd Electrostatic discharge protection apparatus of polydiode
US6249410B1 (en) 1999-08-23 2001-06-19 Taiwan Semiconductor Manufacturing Company ESD protection circuit without overstress gate-driven effect
US6552886B1 (en) * 2000-06-29 2003-04-22 Pericom Semiconductor Corp. Active Vcc-to-Vss ESD clamp with hystersis for low supply chips
US6624992B1 (en) 2000-10-06 2003-09-23 Qualcomm, Incorporated Electro-static discharge protection circuit
US7005708B2 (en) * 2001-06-14 2006-02-28 Sarnoff Corporation Minimum-dimension, fully-silicided MOS driver and ESD protection design for optimized inter-finger coupling
US6943578B1 (en) * 2004-03-31 2005-09-13 International Business Machines Corporation Method and application of PICA (picosecond imaging circuit analysis) for high current pulsed phenomena
US7256975B2 (en) 2004-06-14 2007-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuit and method
DE102004062205B4 (de) * 2004-12-23 2007-04-05 Infineon Technologies Ag Schaltungsanordnung zum Schutz einer Schaltung vor elektrostatischen Entladungen
US8064175B2 (en) * 2005-09-15 2011-11-22 Rambus Inc. Power supply shunt
US7405915B2 (en) * 2006-03-03 2008-07-29 Hynix Semiconductor Inc. Protection circuit against electrostatic discharge in semiconductor device

Also Published As

Publication number Publication date
WO2008024973A3 (en) 2008-07-03
CN101506976A (zh) 2009-08-12
CN101506976B (zh) 2012-08-08
JP2010502130A (ja) 2010-01-21
KR101109283B1 (ko) 2012-01-31
WO2008024973A2 (en) 2008-02-28
EP2057682A2 (de) 2009-05-13
EP2057682B1 (de) 2012-04-25
KR20090051234A (ko) 2009-05-21
TW200820414A (en) 2008-05-01
US20080049365A1 (en) 2008-02-28
US7724485B2 (en) 2010-05-25
JP5074500B2 (ja) 2012-11-14

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