ATE524834T1 - Leistungshalbleiterbauelemente mit isoliertem gate - Google Patents

Leistungshalbleiterbauelemente mit isoliertem gate

Info

Publication number
ATE524834T1
ATE524834T1 AT04743910T AT04743910T ATE524834T1 AT E524834 T1 ATE524834 T1 AT E524834T1 AT 04743910 T AT04743910 T AT 04743910T AT 04743910 T AT04743910 T AT 04743910T AT E524834 T1 ATE524834 T1 AT E524834T1
Authority
AT
Austria
Prior art keywords
trench
itr
insulating material
intersection
tcs
Prior art date
Application number
AT04743910T
Other languages
English (en)
Inventor
Raymond J E Hueting
Erwin A Hijzen
T Zandt Michael A In
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE524834T1 publication Critical patent/ATE524834T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
AT04743910T 2003-07-12 2004-07-07 Leistungshalbleiterbauelemente mit isoliertem gate ATE524834T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0316362.3A GB0316362D0 (en) 2003-07-12 2003-07-12 Insulated gate power semiconductor devices
PCT/IB2004/002248 WO2005006446A1 (en) 2003-07-12 2004-07-07 Insulated gate power semiconductor devices

Publications (1)

Publication Number Publication Date
ATE524834T1 true ATE524834T1 (de) 2011-09-15

Family

ID=27742072

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04743910T ATE524834T1 (de) 2003-07-12 2004-07-07 Leistungshalbleiterbauelemente mit isoliertem gate

Country Status (8)

Country Link
US (1) US7235842B2 (de)
EP (1) EP1647058B1 (de)
JP (1) JP2007531246A (de)
KR (1) KR20060035752A (de)
CN (1) CN100541817C (de)
AT (1) ATE524834T1 (de)
GB (1) GB0316362D0 (de)
WO (1) WO2005006446A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7807582B2 (en) 2006-03-06 2010-10-05 Micron Technology, Inc. Method of forming contacts for a memory device
US7859037B2 (en) * 2007-02-16 2010-12-28 Power Integrations, Inc. Checkerboarded high-voltage vertical transistor layout
US8159021B2 (en) * 2008-02-20 2012-04-17 Force-Mos Technology Corporation Trench MOSFET with double epitaxial structure
JP2011071161A (ja) * 2009-09-24 2011-04-07 Toshiba Corp 半導体素子及びその製造方法
US8492866B1 (en) 2012-01-09 2013-07-23 International Business Machines Corporation Isolated Zener diode
JP2013149836A (ja) * 2012-01-20 2013-08-01 Toyota Motor Corp 半導体装置とその製造方法
US9773874B2 (en) * 2012-08-01 2017-09-26 Mitsubishi Electric Corporation Silicon carbide semiconductor device and manufacturing method therefor
US9070584B2 (en) * 2013-05-24 2015-06-30 Nanya Technology Corp. Buried digitline (BDL) access device and memory array
JP6281897B2 (ja) * 2013-10-30 2018-02-21 ルネサスエレクトロニクス株式会社 半導体装置
JP2015138789A (ja) * 2014-01-20 2015-07-30 トヨタ自動車株式会社 半導体装置
US9716168B2 (en) * 2014-09-24 2017-07-25 Shindengen Electric Manufacturing Co., Ltd. Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device
US10833206B2 (en) 2018-12-11 2020-11-10 Micron Technology, Inc. Microelectronic devices including capacitor structures and methods of forming microelectronic devices
CN112992682A (zh) 2019-12-13 2021-06-18 华润微电子（重庆）有限公司 沟槽型场效应晶体管结构及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992390A (en) 1989-07-06 1991-02-12 General Electric Company Trench gate structure with thick bottom oxide
US5468982A (en) * 1994-06-03 1995-11-21 Siliconix Incorporated Trenched DMOS transistor with channel block at cell trench corners
JP3155894B2 (ja) * 1994-09-29 2001-04-16 株式会社東芝 半導体装置およびその製造方法
US6262453B1 (en) * 1998-04-24 2001-07-17 Magepower Semiconductor Corp. Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate
GB9917099D0 (en) * 1999-07-22 1999-09-22 Koninkl Philips Electronics Nv Cellular trench-gate field-effect transistors
JP3344381B2 (ja) * 1999-08-23 2002-11-11 日本電気株式会社 半導体装置及びその製造方法
TW479363B (en) * 2000-03-17 2002-03-11 Gen Semiconductor Inc Trench DMOS transistor having a double gate structure
WO2002015254A2 (en) 2000-08-17 2002-02-21 Koninklijke Philips Electronics N.V. Method of manufacturing a trench-gate semiconductor device and corresponding device
US6472708B1 (en) 2000-08-31 2002-10-29 General Semiconductor, Inc. Trench MOSFET with structure having low gate charge
JP4073176B2 (ja) * 2001-04-02 2008-04-09 新電元工業株式会社 半導体装置およびその製造方法
GB0122121D0 (en) * 2001-09-13 2001-10-31 Koninkl Philips Electronics Nv Edge termination in a trench-gate mosfet
US6774434B2 (en) 2001-11-16 2004-08-10 Koninklijke Philips Electronics N.V. Field effect device having a drift region and field shaping region used as capacitor dielectric
US7648877B2 (en) * 2005-06-24 2010-01-19 Fairchild Semiconductor Corporation Structure and method for forming laterally extending dielectric layer in a trench-gate FET

Also Published As

Publication number Publication date
EP1647058B1 (de) 2011-09-14
GB0316362D0 (en) 2003-08-13
US20060189063A1 (en) 2006-08-24
US7235842B2 (en) 2007-06-26
CN100541817C (zh) 2009-09-16
KR20060035752A (ko) 2006-04-26
WO2005006446A1 (en) 2005-01-20
JP2007531246A (ja) 2007-11-01
CN1823422A (zh) 2006-08-23
EP1647058A1 (de) 2006-04-19

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