ATE524834T1 - Leistungshalbleiterbauelemente mit isoliertem gate - Google Patents
Leistungshalbleiterbauelemente mit isoliertem gateInfo
- Publication number
- ATE524834T1 ATE524834T1 AT04743910T AT04743910T ATE524834T1 AT E524834 T1 ATE524834 T1 AT E524834T1 AT 04743910 T AT04743910 T AT 04743910T AT 04743910 T AT04743910 T AT 04743910T AT E524834 T1 ATE524834 T1 AT E524834T1
- Authority
- AT
- Austria
- Prior art keywords
- trench
- itr
- insulating material
- intersection
- tcs
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 101100126625 Caenorhabditis elegans itr-1 gene Proteins 0.000 abstract 5
- 239000011810 insulating material Substances 0.000 abstract 5
- 210000000746 body region Anatomy 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0316362.3A GB0316362D0 (en) | 2003-07-12 | 2003-07-12 | Insulated gate power semiconductor devices |
PCT/IB2004/002248 WO2005006446A1 (en) | 2003-07-12 | 2004-07-07 | Insulated gate power semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE524834T1 true ATE524834T1 (de) | 2011-09-15 |
Family
ID=27742072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04743910T ATE524834T1 (de) | 2003-07-12 | 2004-07-07 | Leistungshalbleiterbauelemente mit isoliertem gate |
Country Status (8)
Country | Link |
---|---|
US (1) | US7235842B2 (de) |
EP (1) | EP1647058B1 (de) |
JP (1) | JP2007531246A (de) |
KR (1) | KR20060035752A (de) |
CN (1) | CN100541817C (de) |
AT (1) | ATE524834T1 (de) |
GB (1) | GB0316362D0 (de) |
WO (1) | WO2005006446A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7807582B2 (en) | 2006-03-06 | 2010-10-05 | Micron Technology, Inc. | Method of forming contacts for a memory device |
US7859037B2 (en) * | 2007-02-16 | 2010-12-28 | Power Integrations, Inc. | Checkerboarded high-voltage vertical transistor layout |
US8159021B2 (en) * | 2008-02-20 | 2012-04-17 | Force-Mos Technology Corporation | Trench MOSFET with double epitaxial structure |
JP2011071161A (ja) * | 2009-09-24 | 2011-04-07 | Toshiba Corp | 半導体素子及びその製造方法 |
US8492866B1 (en) | 2012-01-09 | 2013-07-23 | International Business Machines Corporation | Isolated Zener diode |
JP2013149836A (ja) * | 2012-01-20 | 2013-08-01 | Toyota Motor Corp | 半導体装置とその製造方法 |
US9773874B2 (en) * | 2012-08-01 | 2017-09-26 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device and manufacturing method therefor |
US9070584B2 (en) * | 2013-05-24 | 2015-06-30 | Nanya Technology Corp. | Buried digitline (BDL) access device and memory array |
JP6281897B2 (ja) * | 2013-10-30 | 2018-02-21 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2015138789A (ja) * | 2014-01-20 | 2015-07-30 | トヨタ自動車株式会社 | 半導体装置 |
US9716168B2 (en) * | 2014-09-24 | 2017-07-25 | Shindengen Electric Manufacturing Co., Ltd. | Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device |
US10833206B2 (en) | 2018-12-11 | 2020-11-10 | Micron Technology, Inc. | Microelectronic devices including capacitor structures and methods of forming microelectronic devices |
CN112992682A (zh) | 2019-12-13 | 2021-06-18 | 华润微电子(重庆)有限公司 | 沟槽型场效应晶体管结构及其制备方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4992390A (en) | 1989-07-06 | 1991-02-12 | General Electric Company | Trench gate structure with thick bottom oxide |
US5468982A (en) * | 1994-06-03 | 1995-11-21 | Siliconix Incorporated | Trenched DMOS transistor with channel block at cell trench corners |
JP3155894B2 (ja) * | 1994-09-29 | 2001-04-16 | 株式会社東芝 | 半導体装置およびその製造方法 |
US6262453B1 (en) * | 1998-04-24 | 2001-07-17 | Magepower Semiconductor Corp. | Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate |
GB9917099D0 (en) * | 1999-07-22 | 1999-09-22 | Koninkl Philips Electronics Nv | Cellular trench-gate field-effect transistors |
JP3344381B2 (ja) * | 1999-08-23 | 2002-11-11 | 日本電気株式会社 | 半導体装置及びその製造方法 |
TW479363B (en) * | 2000-03-17 | 2002-03-11 | Gen Semiconductor Inc | Trench DMOS transistor having a double gate structure |
WO2002015254A2 (en) | 2000-08-17 | 2002-02-21 | Koninklijke Philips Electronics N.V. | Method of manufacturing a trench-gate semiconductor device and corresponding device |
US6472708B1 (en) | 2000-08-31 | 2002-10-29 | General Semiconductor, Inc. | Trench MOSFET with structure having low gate charge |
JP4073176B2 (ja) * | 2001-04-02 | 2008-04-09 | 新電元工業株式会社 | 半導体装置およびその製造方法 |
GB0122121D0 (en) * | 2001-09-13 | 2001-10-31 | Koninkl Philips Electronics Nv | Edge termination in a trench-gate mosfet |
US6774434B2 (en) | 2001-11-16 | 2004-08-10 | Koninklijke Philips Electronics N.V. | Field effect device having a drift region and field shaping region used as capacitor dielectric |
US7648877B2 (en) * | 2005-06-24 | 2010-01-19 | Fairchild Semiconductor Corporation | Structure and method for forming laterally extending dielectric layer in a trench-gate FET |
-
2003
- 2003-07-12 US US10/564,214 patent/US7235842B2/en not_active Expired - Fee Related
- 2003-07-12 GB GBGB0316362.3A patent/GB0316362D0/en not_active Ceased
-
2004
- 2004-07-07 WO PCT/IB2004/002248 patent/WO2005006446A1/en active Application Filing
- 2004-07-07 KR KR1020067000769A patent/KR20060035752A/ko not_active Application Discontinuation
- 2004-07-07 AT AT04743910T patent/ATE524834T1/de not_active IP Right Cessation
- 2004-07-07 CN CNB2004800200746A patent/CN100541817C/zh not_active Expired - Fee Related
- 2004-07-07 JP JP2006520030A patent/JP2007531246A/ja not_active Withdrawn
- 2004-07-07 EP EP04743910A patent/EP1647058B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1647058B1 (de) | 2011-09-14 |
GB0316362D0 (en) | 2003-08-13 |
US20060189063A1 (en) | 2006-08-24 |
US7235842B2 (en) | 2007-06-26 |
CN100541817C (zh) | 2009-09-16 |
KR20060035752A (ko) | 2006-04-26 |
WO2005006446A1 (en) | 2005-01-20 |
JP2007531246A (ja) | 2007-11-01 |
CN1823422A (zh) | 2006-08-23 |
EP1647058A1 (de) | 2006-04-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |