ATE520151T1 - Bipolartransistor und herstellungsverfahren dafür - Google Patents
Bipolartransistor und herstellungsverfahren dafürInfo
- Publication number
- ATE520151T1 ATE520151T1 AT06765787T AT06765787T ATE520151T1 AT E520151 T1 ATE520151 T1 AT E520151T1 AT 06765787 T AT06765787 T AT 06765787T AT 06765787 T AT06765787 T AT 06765787T AT E520151 T1 ATE520151 T1 AT E520151T1
- Authority
- AT
- Austria
- Prior art keywords
- region
- bipolar transistor
- base
- emitter
- connection
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 125000006850 spacer group Chemical group 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05105716 | 2005-06-27 | ||
| PCT/IB2006/051975 WO2007000683A2 (en) | 2005-06-27 | 2006-06-20 | Bipolar transistor and method op manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE520151T1 true ATE520151T1 (de) | 2011-08-15 |
Family
ID=37400989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06765787T ATE520151T1 (de) | 2005-06-27 | 2006-06-20 | Bipolartransistor und herstellungsverfahren dafür |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20090200577A1 (de) |
| EP (1) | EP1900034B1 (de) |
| JP (1) | JP2008544562A (de) |
| CN (1) | CN101208802B (de) |
| AT (1) | ATE520151T1 (de) |
| TW (1) | TW200739901A (de) |
| WO (1) | WO2007000683A2 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007045552A1 (de) * | 2007-09-24 | 2009-04-02 | Autoliv Development Ab | Kraftfahrzeugsitz mit Sicherheitseinrichtung |
| EP2581930B1 (de) | 2011-10-11 | 2014-06-04 | Nxp B.V. | Verfahren zur Herstellung eines bipolaren Transistors, bipolarer Transistor und integrierte Schaltung |
| US11569357B2 (en) | 2021-05-13 | 2023-01-31 | Nxp Usa, Inc. | Semiconductor device and method of making a semiconductor device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2582519B2 (ja) * | 1992-07-13 | 1997-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | バイポーラ・トランジスタおよびその製造方法 |
| US5541124A (en) * | 1993-02-28 | 1996-07-30 | Sony Corporation | Method for making bipolar transistor having double polysilicon structure |
| US6020246A (en) * | 1998-03-13 | 2000-02-01 | National Semiconductor Corporation | Forming a self-aligned epitaxial base bipolar transistor |
| SE517833C2 (sv) * | 1999-11-26 | 2002-07-23 | Ericsson Telefon Ab L M | Metod vid tillverkning av en bipolär kiseltransistor för att bilda basområden och öppna ett emitterfönster samt bipolär kiseltransistor tillverkad enligt metoden |
| US6858532B2 (en) * | 2002-12-10 | 2005-02-22 | International Business Machines Corporation | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling |
| KR100498503B1 (ko) * | 2003-06-19 | 2005-07-01 | 삼성전자주식회사 | 바이폴라 접합 트랜지스터 및 그 제조 방법 |
| JP2005094001A (ja) * | 2003-09-17 | 2005-04-07 | Stmicroelectronics Sa | 高いダイナミックパーフォーマンスを有するバイポーラトランジスタ |
| US6979884B2 (en) * | 2003-12-04 | 2005-12-27 | International Business Machines Corporation | Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border |
| US6982442B2 (en) * | 2004-01-06 | 2006-01-03 | International Business Machines Corporation | Structure and method for making heterojunction bipolar transistor having self-aligned silicon-germanium raised extrinsic base |
| JP2006080508A (ja) * | 2004-08-27 | 2006-03-23 | Asahi Kasei Microsystems Kk | 半導体デバイス及びその製造方法 |
-
2006
- 2006-06-20 US US11/917,628 patent/US20090200577A1/en not_active Abandoned
- 2006-06-20 JP JP2008519026A patent/JP2008544562A/ja not_active Withdrawn
- 2006-06-20 EP EP06765787A patent/EP1900034B1/de active Active
- 2006-06-20 CN CN2006800230632A patent/CN101208802B/zh active Active
- 2006-06-20 WO PCT/IB2006/051975 patent/WO2007000683A2/en active Application Filing
- 2006-06-20 AT AT06765787T patent/ATE520151T1/de not_active IP Right Cessation
- 2006-06-23 TW TW095122774A patent/TW200739901A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN101208802A (zh) | 2008-06-25 |
| EP1900034A2 (de) | 2008-03-19 |
| WO2007000683A3 (en) | 2007-03-29 |
| JP2008544562A (ja) | 2008-12-04 |
| CN101208802B (zh) | 2011-09-07 |
| WO2007000683A2 (en) | 2007-01-04 |
| TW200739901A (en) | 2007-10-16 |
| US20090200577A1 (en) | 2009-08-13 |
| EP1900034B1 (de) | 2011-08-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |