ATE519233T1 - Verfahren zur herstellung eines halbleiters - Google Patents
Verfahren zur herstellung eines halbleitersInfo
- Publication number
- ATE519233T1 ATE519233T1 AT07731096T AT07731096T ATE519233T1 AT E519233 T1 ATE519233 T1 AT E519233T1 AT 07731096 T AT07731096 T AT 07731096T AT 07731096 T AT07731096 T AT 07731096T AT E519233 T1 ATE519233 T1 AT E519233T1
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor
- well
- concerns
- producing
- doping
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Bipolar Transistors (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0602063A FR2898433B1 (fr) | 2006-03-08 | 2006-03-08 | Procede de preparation d'un semi-conducteur. |
PCT/FR2007/000397 WO2007104848A1 (fr) | 2006-03-08 | 2007-03-06 | Procede de preparation d'un semi-conducteur |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE519233T1 true ATE519233T1 (de) | 2011-08-15 |
Family
ID=36982659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT07731096T ATE519233T1 (de) | 2006-03-08 | 2007-03-06 | Verfahren zur herstellung eines halbleiters |
Country Status (6)
Country | Link |
---|---|
US (1) | US8367529B2 (de) |
EP (1) | EP1992020B1 (de) |
JP (1) | JP5629884B2 (de) |
AT (1) | ATE519233T1 (de) |
FR (1) | FR2898433B1 (de) |
WO (1) | WO2007104848A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020067215A1 (ja) * | 2018-09-28 | 2020-04-02 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子およびその製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6476420B2 (en) * | 1997-11-18 | 2002-11-05 | Technologies And Devices International, Inc. | P-N homojunction-based structures utilizing HVPE growth III-V compound layers |
US6559467B2 (en) * | 1997-11-18 | 2003-05-06 | Technologies And Devices International, Inc. | P-n heterojunction-based structures utilizing HVPE grown III-V compound layers |
JP4186306B2 (ja) * | 1998-05-06 | 2008-11-26 | 松下電器産業株式会社 | 半導体装置 |
US6713789B1 (en) * | 1999-03-31 | 2004-03-30 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device and method of producing the same |
GB2351390A (en) * | 1999-06-16 | 2000-12-27 | Sharp Kk | A semiconductor material comprising two dopants |
JP2001320089A (ja) * | 2000-05-11 | 2001-11-16 | Furukawa Electric Co Ltd:The | GaN系発光素子およびその作成方法 |
US6583449B2 (en) * | 2001-05-07 | 2003-06-24 | Xerox Corporation | Semiconductor device and method of forming a semiconductor device |
JP4230715B2 (ja) * | 2001-05-07 | 2009-02-25 | ゼロックス コーポレイション | 光放射半導体素子 |
US7338675B2 (en) * | 2002-05-10 | 2008-03-04 | Tsi Health Sciences, Inc. | Fenugreek seed bio-active compositions and methods for extracting same |
US7786550B2 (en) * | 2003-03-06 | 2010-08-31 | Panasonic Corporation | P-type semiconductor and semiconductor hetero material and manufacturing methods thereof |
KR100611491B1 (ko) * | 2004-08-26 | 2006-08-10 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
-
2006
- 2006-03-08 FR FR0602063A patent/FR2898433B1/fr not_active Expired - Fee Related
-
2007
- 2007-03-06 AT AT07731096T patent/ATE519233T1/de not_active IP Right Cessation
- 2007-03-06 WO PCT/FR2007/000397 patent/WO2007104848A1/fr active Application Filing
- 2007-03-06 JP JP2008557796A patent/JP5629884B2/ja active Active
- 2007-03-06 EP EP07731096A patent/EP1992020B1/de active Active
- 2007-03-06 US US12/281,332 patent/US8367529B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20110089445A1 (en) | 2011-04-21 |
FR2898433A1 (fr) | 2007-09-14 |
EP1992020B1 (de) | 2011-08-03 |
WO2007104848A1 (fr) | 2007-09-20 |
US8367529B2 (en) | 2013-02-05 |
FR2898433B1 (fr) | 2008-06-06 |
JP2009529230A (ja) | 2009-08-13 |
JP5629884B2 (ja) | 2014-11-26 |
EP1992020A1 (de) | 2008-11-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |