ATE498903T1 - Verfahren zur ablagerung einer fluordotierten siliziumdioxidschicht - Google Patents
Verfahren zur ablagerung einer fluordotierten siliziumdioxidschichtInfo
- Publication number
- ATE498903T1 ATE498903T1 AT01963039T AT01963039T ATE498903T1 AT E498903 T1 ATE498903 T1 AT E498903T1 AT 01963039 T AT01963039 T AT 01963039T AT 01963039 T AT01963039 T AT 01963039T AT E498903 T1 ATE498903 T1 AT E498903T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon
- depositing
- fluorine
- silicon dioxide
- doped silicon
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 2
- 238000000151 deposition Methods 0.000 title 1
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 238000001704 evaporation Methods 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Silicon Compounds (AREA)
- Glass Compositions (AREA)
- Laminated Bodies (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0010149A FR2812664B1 (fr) | 2000-08-01 | 2000-08-01 | Procede de depot d'une couche de silice dopee au fluor et son application en optique ophtalmique |
| PCT/FR2001/002505 WO2002011195A1 (fr) | 2000-08-01 | 2001-07-31 | Procede de depot d'une couche de silice dopee au fluor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE498903T1 true ATE498903T1 (de) | 2011-03-15 |
Family
ID=8853198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01963039T ATE498903T1 (de) | 2000-08-01 | 2001-07-31 | Verfahren zur ablagerung einer fluordotierten siliziumdioxidschicht |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6797649B2 (de) |
| EP (1) | EP1307907B1 (de) |
| JP (1) | JP5027980B2 (de) |
| AT (1) | ATE498903T1 (de) |
| AU (1) | AU2001284090A1 (de) |
| DE (1) | DE60144049D1 (de) |
| FR (1) | FR2812664B1 (de) |
| WO (1) | WO2002011195A1 (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6355580B1 (en) | 1998-09-03 | 2002-03-12 | Micron Technology, Inc. | Ion-assisted oxidation methods and the resulting structures |
| FR2843407B1 (fr) * | 2002-08-08 | 2005-04-22 | Procede d'obtention d'une couche mince, stabilisee, de silice dopee au fluor, couche mince obtenue et leur application en optique ophtalmique | |
| FR2843406A1 (fr) * | 2002-08-08 | 2004-02-13 | Essilor Int | Procede d'obtention d'une couche mince, stabilisee, de silice dopee au fluor, couche mince obtenue et leur application en optique ophtalmique |
| US20060023311A1 (en) * | 2002-08-08 | 2006-02-02 | Essilor International Compangnie Generale D'optique | Method for obtaining a thin, stabilized fluorine-doped silica layer, resulting thin layer, and use thereof in ophthalmic optics |
| US6872479B2 (en) * | 2003-04-11 | 2005-03-29 | Corning Incorporated | Coated optics to improve durability |
| FR2859487B1 (fr) * | 2003-09-04 | 2006-12-15 | Essilor Int | Procede de depot d'une couche amorphe contenant majoritairement du fluor et du carbone et dispositif convenant a sa mise en oeuvre |
| DE102007004844B4 (de) * | 2007-01-31 | 2011-05-05 | Infineon Technologies Ag | Verfahren zur Herstellung eines Bauteils und Bauteil |
| WO2013152031A1 (en) * | 2012-04-04 | 2013-10-10 | Kla-Tencor Corporation | Protective fluorine-doped silicon oxide film for optical components |
| EP3693766B1 (de) | 2019-02-05 | 2024-10-30 | Corporation de L'Ecole Polytechnique de Montreal | Mit einer schicht mit niedrigem brechungsindex auf basis von fluorierten organosiliciumverbindungen beschichteter artikel |
| US20220049345A1 (en) * | 2020-08-17 | 2022-02-17 | Kla Corporation | Fluorine-doped optical materials for optical components |
| DE102021200747A1 (de) * | 2021-01-28 | 2022-07-28 | Carl Zeiss Smt Gmbh | Verfahren zum Bilden einer Schicht, optisches Element und optisches System |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4008383A1 (de) * | 1989-03-16 | 1990-09-20 | Tosoh Corp | Achromat fuer ultraviolettstrahlen |
| JPH03202461A (ja) * | 1989-12-29 | 1991-09-04 | Nissin Electric Co Ltd | 高絶縁酸化ケイ素薄膜の形成方法 |
| JP3152829B2 (ja) * | 1994-01-18 | 2001-04-03 | 株式会社東芝 | 半導体装置の製造方法 |
| JPH08337435A (ja) * | 1995-06-14 | 1996-12-24 | Hitachi Cable Ltd | 石英系ガラス膜の製造方法 |
| US6042901A (en) * | 1996-02-20 | 2000-03-28 | Lam Research Corporation | Method for depositing fluorine doped silicon dioxide films |
| US6001728A (en) * | 1996-03-15 | 1999-12-14 | Applied Materials, Inc. | Method and apparatus for improving film stability of halogen-doped silicon oxide films |
| JPH11326185A (ja) | 1998-05-12 | 1999-11-26 | Nippon Sheet Glass Co Ltd | 液滴検出装置 |
-
2000
- 2000-08-01 FR FR0010149A patent/FR2812664B1/fr not_active Expired - Lifetime
-
2001
- 2001-07-31 DE DE60144049T patent/DE60144049D1/de not_active Expired - Lifetime
- 2001-07-31 EP EP01963039A patent/EP1307907B1/de not_active Expired - Lifetime
- 2001-07-31 US US10/343,508 patent/US6797649B2/en not_active Expired - Lifetime
- 2001-07-31 AT AT01963039T patent/ATE498903T1/de not_active IP Right Cessation
- 2001-07-31 JP JP2002516822A patent/JP5027980B2/ja not_active Expired - Fee Related
- 2001-07-31 WO PCT/FR2001/002505 patent/WO2002011195A1/fr not_active Ceased
- 2001-07-31 AU AU2001284090A patent/AU2001284090A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| FR2812664B1 (fr) | 2002-11-08 |
| US6797649B2 (en) | 2004-09-28 |
| AU2001284090A1 (en) | 2002-02-13 |
| DE60144049D1 (de) | 2011-03-31 |
| US20040092131A1 (en) | 2004-05-13 |
| FR2812664A1 (fr) | 2002-02-08 |
| EP1307907B1 (de) | 2011-02-16 |
| EP1307907A1 (de) | 2003-05-07 |
| JP5027980B2 (ja) | 2012-09-19 |
| WO2002011195A1 (fr) | 2002-02-07 |
| JP2004505179A (ja) | 2004-02-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |