ATE492053T1 - Halbleiterlaser und herstellungsverfahren - Google Patents

Halbleiterlaser und herstellungsverfahren

Info

Publication number
ATE492053T1
ATE492053T1 AT04744842T AT04744842T ATE492053T1 AT E492053 T1 ATE492053 T1 AT E492053T1 AT 04744842 T AT04744842 T AT 04744842T AT 04744842 T AT04744842 T AT 04744842T AT E492053 T1 ATE492053 T1 AT E492053T1
Authority
AT
Austria
Prior art keywords
cavity
laser
optical feedback
perturbation
defining
Prior art date
Application number
AT04744842T
Other languages
English (en)
Inventor
John Patchell
Brian Kelly
James O'gorman
Original Assignee
Eblana Photonics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eblana Photonics Ltd filed Critical Eblana Photonics Ltd
Application granted granted Critical
Publication of ATE492053T1 publication Critical patent/ATE492053T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0656—Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017—Waveguide having a void for insertion of materials to change optical properties

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
AT04744842T 2003-07-11 2004-06-24 Halbleiterlaser und herstellungsverfahren ATE492053T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IE20030516A IES20030516A2 (en) 2003-07-11 2003-07-11 Semiconductor laser and method of manufacture
PCT/IE2004/000091 WO2005006507A1 (en) 2003-07-11 2004-06-24 Semiconductor laser and method of manufacture

Publications (1)

Publication Number Publication Date
ATE492053T1 true ATE492053T1 (de) 2011-01-15

Family

ID=33042596

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04744842T ATE492053T1 (de) 2003-07-11 2004-06-24 Halbleiterlaser und herstellungsverfahren

Country Status (8)

Country Link
US (1) US7672348B2 (de)
EP (1) EP1661219B1 (de)
JP (1) JP4813356B2 (de)
CN (1) CN100373719C (de)
AT (1) ATE492053T1 (de)
DE (1) DE602004030585D1 (de)
IE (1) IES20030516A2 (de)
WO (1) WO2005006507A1 (de)

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* Cited by examiner, † Cited by third party
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EP1769568A1 (de) * 2004-07-16 2007-04-04 University College Cork-National University of Ireland, Cork Verfahren zum entwurf eines halbleiterlasers mit reflektierenden merkmalen im resonator, halbleiterlaser und herstellungsverfahren dafür
IES20050574A2 (en) * 2005-08-31 2007-02-21 Eblana Photonics Ltd Semiconductor laser and method of manufacture
JP2007073819A (ja) * 2005-09-08 2007-03-22 Mitsubishi Electric Corp 半導体レーザおよび光送受信装置
IES20050587A2 (en) * 2005-09-08 2007-02-21 Eblana Photonics Ltd Multi-stripe laser diode designs which exhibit a high degree of manafacturability
GB2432456A (en) * 2005-11-21 2007-05-23 Bookham Technology Plc High power semiconductor laser diode
JP4885767B2 (ja) * 2007-03-01 2012-02-29 日本電信電話株式会社 半導体導波路素子及び半導体レーザ及びその作製方法
JP4909159B2 (ja) * 2007-04-02 2012-04-04 日本電信電話株式会社 半導体導波路素子およびその作製方法ならびに半導体レーザ
WO2010060998A2 (en) * 2008-11-28 2010-06-03 Pbc Lasers Gmbh Method for improvement of beam quality and wavelength stabilized operation of a semiconductor diode laser with an extended waveguide
DE102009056387B9 (de) * 2009-10-30 2020-05-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden
CN102148478B (zh) * 2011-03-04 2013-09-04 中国科学院半导体研究所 980nm单模波长稳定半导体激光器的制备方法
CN103199435B (zh) * 2013-03-25 2015-06-10 中国科学院半导体研究所 超低发散角倾斜光束的单纵模人工微结构激光器
CN104767122B (zh) * 2015-04-23 2018-07-31 中国科学院上海微系统与信息技术研究所 单模可调谐太赫兹量子级联激光器的器件结构及制作方法
CN107611776B (zh) * 2017-10-13 2020-06-09 中国科学院长春光学精密机械与物理研究所 一种增益耦合分布反馈半导体激光器及其制作方法
CN116316054B (zh) * 2023-04-27 2023-08-01 深圳市星汉激光科技股份有限公司 一种具有电流非注入层的激光芯片及其制备方法

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JPS5251884A (en) * 1975-10-22 1977-04-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
US4573163A (en) * 1982-09-13 1986-02-25 At&T Bell Laboratories Longitudinal mode stabilized laser
JPS59145588A (ja) * 1983-02-09 1984-08-21 Hitachi Ltd 半導体レ−ザ装置
US4608697A (en) * 1983-04-11 1986-08-26 At&T Bell Laboratories Spectral control arrangement for coupled cavity laser
JPS60165781A (ja) * 1984-02-08 1985-08-28 Matsushita Electric Ind Co Ltd 半導体レ−ザ
JPS60263490A (ja) * 1984-06-12 1985-12-26 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS61156894A (ja) 1984-12-28 1986-07-16 Nec Corp 分布帰還型半導体レ−ザ
US4839308A (en) * 1986-07-21 1989-06-13 Gte Laboratories Incorporated Method of making an external-coupled-cavity diode laser
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JP2941364B2 (ja) * 1990-06-19 1999-08-25 株式会社東芝 半導体レーザ装置
JPH0537088A (ja) * 1991-08-01 1993-02-12 Matsushita Electric Ind Co Ltd 分布帰還型半導体レーザ装置及びその製造方法
US5285468A (en) 1992-07-17 1994-02-08 At&T Bell Laboratories Analog optical fiber communication system, and laser adapted for use in such a system
US6075799A (en) * 1996-08-28 2000-06-13 Canon Kabushiki Kaisha Polarization selective semiconductor laser, optical transmitter using the same, optical communication system using the same and fabrication method of the same
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JPH11214799A (ja) * 1998-01-26 1999-08-06 Furukawa Electric Co Ltd:The 半導体レーザモジュール
ATE268511T1 (de) * 1999-09-23 2004-06-15 Trinity College Dublin Lichtwellenleiter und herstellungsverfahren
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IES20000820A2 (en) * 2000-10-11 2002-05-29 Nat Univ Ireland A single frequency laser

Also Published As

Publication number Publication date
US20070211775A1 (en) 2007-09-13
JP2007531248A (ja) 2007-11-01
IES20030516A2 (en) 2004-10-06
EP1661219A1 (de) 2006-05-31
US7672348B2 (en) 2010-03-02
CN1823455A (zh) 2006-08-23
EP1661219B1 (de) 2010-12-15
WO2005006507A1 (en) 2005-01-20
DE602004030585D1 (de) 2011-01-27
JP4813356B2 (ja) 2011-11-09
CN100373719C (zh) 2008-03-05

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