DE602006006570D1 - Optoelektronische einrichtungen mit gefaltetem resonator - Google Patents

Optoelektronische einrichtungen mit gefaltetem resonator

Info

Publication number
DE602006006570D1
DE602006006570D1 DE602006006570T DE602006006570T DE602006006570D1 DE 602006006570 D1 DE602006006570 D1 DE 602006006570D1 DE 602006006570 T DE602006006570 T DE 602006006570T DE 602006006570 T DE602006006570 T DE 602006006570T DE 602006006570 D1 DE602006006570 D1 DE 602006006570D1
Authority
DE
Germany
Prior art keywords
waveguide
facet
optoelectronic equipment
folded resonator
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006006570T
Other languages
English (en)
Inventor
Ian Francis Lealman
Graeme Douglas Maxwell
David William Smith
Michael James Robertson
Alistair James Poustie
Xin Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Centre for Integrated Photonics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre for Integrated Photonics Ltd filed Critical Centre for Integrated Photonics Ltd
Publication of DE602006006570D1 publication Critical patent/DE602006006570D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/101—Curved waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Led Device Packages (AREA)
  • Secondary Cells (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
DE602006006570T 2005-06-17 2006-06-19 Optoelektronische einrichtungen mit gefaltetem resonator Active DE602006006570D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0512386.4A GB0512386D0 (en) 2005-06-17 2005-06-17 Folded cavity optoelectronic devices
PCT/GB2006/002253 WO2006134394A1 (en) 2005-06-17 2006-06-19 Folded cavity optoelectronic devices

Publications (1)

Publication Number Publication Date
DE602006006570D1 true DE602006006570D1 (de) 2009-06-10

Family

ID=34855732

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006006570T Active DE602006006570D1 (de) 2005-06-17 2006-06-19 Optoelektronische einrichtungen mit gefaltetem resonator

Country Status (6)

Country Link
US (1) US7627216B2 (de)
EP (1) EP1891722B1 (de)
AT (1) ATE430393T1 (de)
DE (1) DE602006006570D1 (de)
GB (1) GB0512386D0 (de)
WO (1) WO2006134394A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5257611B2 (ja) 2009-03-16 2013-08-07 セイコーエプソン株式会社 発光装置
JP5679117B2 (ja) 2011-03-09 2015-03-04 セイコーエプソン株式会社 発光装置、照射装置、およびプロジェクター
JP5686025B2 (ja) * 2011-04-06 2015-03-18 セイコーエプソン株式会社 発光装置およびプロジェクター
US10348055B2 (en) 2016-12-30 2019-07-09 Futurewei Technologies, Inc. Folded waveguide structure semiconductor laser

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3943373C2 (de) * 1989-12-30 1993-11-18 Deutsche Forsch Luft Raumfahrt Gefalteter Wellenleiterlaser
US5088105A (en) * 1991-03-26 1992-02-11 Spectra Diode Laboratories, Inc. Optical amplifier with folded light path and laser-amplifier combination
CA2193095C (en) 1994-06-29 2002-04-30 John Vincent Collins Packaged optical device
JP2919329B2 (ja) * 1995-12-30 1999-07-12 日本電気株式会社 光送受信モジュール
JPH11237517A (ja) * 1998-02-23 1999-08-31 Fujitsu Ltd 光導波路素子
JPH11352341A (ja) * 1998-06-04 1999-12-24 Nec Corp 導波路型波長多重光送受信モジュール
JP3680738B2 (ja) * 2001-01-24 2005-08-10 日本電気株式会社 波長多重光通信モジュール
IES20000820A2 (en) * 2000-10-11 2002-05-29 Nat Univ Ireland A single frequency laser
US6778718B2 (en) 2001-11-09 2004-08-17 Corning Incorporated Alignment of active optical components with waveguides
US6718076B2 (en) * 2002-03-22 2004-04-06 Unaxis Usa, Inc. Acousto-optic tunable filter with segmented acousto-optic interaction region
KR20040104813A (ko) * 2003-06-04 2004-12-13 삼성전자주식회사 양방향 광송수신기 모듈

Also Published As

Publication number Publication date
US7627216B2 (en) 2009-12-01
EP1891722A1 (de) 2008-02-27
EP1891722B1 (de) 2009-04-29
GB0512386D0 (en) 2005-07-27
WO2006134394A1 (en) 2006-12-21
US20090129737A1 (en) 2009-05-21
ATE430393T1 (de) 2009-05-15

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