ATE477517T1 - Hochempfindliche resistzusammensetzungen für elektronenlithographie - Google Patents

Hochempfindliche resistzusammensetzungen für elektronenlithographie

Info

Publication number
ATE477517T1
ATE477517T1 AT02786917T AT02786917T ATE477517T1 AT E477517 T1 ATE477517 T1 AT E477517T1 AT 02786917 T AT02786917 T AT 02786917T AT 02786917 T AT02786917 T AT 02786917T AT E477517 T1 ATE477517 T1 AT E477517T1
Authority
AT
Austria
Prior art keywords
resist compositions
group
radiation sensitive
acid
highly sensitive
Prior art date
Application number
AT02786917T
Other languages
English (en)
Inventor
Wu-Song Huang
Wenjie Li
Wayne Moreau
David Medeiros
Karen Petrillo
Rotbert N Lang
Marie Angelopoulos
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE477517T1 publication Critical patent/ATE477517T1/de

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AT02786917T 2002-12-05 2002-12-05 Hochempfindliche resistzusammensetzungen für elektronenlithographie ATE477517T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/039048 WO2004053594A2 (en) 2002-12-05 2002-12-05 High sensitivity resist compositions for electron-based lithography

Publications (1)

Publication Number Publication Date
ATE477517T1 true ATE477517T1 (de) 2010-08-15

Family

ID=32505165

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02786917T ATE477517T1 (de) 2002-12-05 2002-12-05 Hochempfindliche resistzusammensetzungen für elektronenlithographie

Country Status (7)

Country Link
EP (1) EP1586005B1 (de)
JP (1) JP2006512600A (de)
CN (1) CN100578357C (de)
AT (1) ATE477517T1 (de)
AU (1) AU2002351269A1 (de)
DE (1) DE60237318D1 (de)
WO (1) WO2004053594A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008029673A1 (fr) * 2006-09-08 2008-03-13 Jsr Corporation Composition sensible au rayonnement et procédé de fabrication d'un composé de faible masse moléculaire destiné à être utilisé dans ladite composition
US8343706B2 (en) * 2010-01-25 2013-01-01 International Business Machines Corporation Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same
US10021773B2 (en) * 2015-11-16 2018-07-10 Kla-Tencor Corporation Laser produced plasma light source having a target material coated on a cylindrically-symmetric element

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3721740A1 (de) * 1987-07-01 1989-01-12 Basf Ag Sulfoniumsalze mit saeurelabilen gruppierungen
DE4214363C2 (de) * 1991-04-30 1998-01-29 Toshiba Kawasaki Kk Strahlungsempfindliches Gemisch zur Ausbildung von Mustern
JP2662141B2 (ja) * 1991-05-20 1997-10-08 エイ・ティ・アンド・ティ・コーポレーション デバイスの製造方法
TW477913B (en) * 1995-11-02 2002-03-01 Shinetsu Chemical Co Sulfonium salts and chemically amplified positive resist compositions
KR19990036901A (ko) * 1997-10-08 1999-05-25 카나가와 치히로 폴리스티렌계 고분자 화합물, 화학증폭 포지티브형 레지스트 재료 및 패턴 형성 방법
US6037097A (en) 1998-01-27 2000-03-14 International Business Machines Corporation E-beam application to mask making using new improved KRS resist system
TWI277830B (en) * 1999-01-28 2007-04-01 Sumitomo Chemical Co Resist composition
SG76651A1 (en) * 1999-03-31 2000-11-21 Sumitomo Chemical Co Chemical amplification type positive resist
US6365321B1 (en) * 1999-04-13 2002-04-02 International Business Machines Corporation Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations
JP3972568B2 (ja) * 2000-05-09 2007-09-05 住友化学株式会社 化学増幅型ポジ型レジスト組成物及びスルホニウム塩
TWI286664B (en) * 2000-06-23 2007-09-11 Sumitomo Chemical Co Chemical amplification type positive resist composition and sulfonium salt

Also Published As

Publication number Publication date
EP1586005B1 (de) 2010-08-11
WO2004053594A2 (en) 2004-06-24
CN100578357C (zh) 2010-01-06
DE60237318D1 (de) 2010-09-23
WO2004053594A3 (en) 2005-11-24
EP1586005A2 (de) 2005-10-19
JP2006512600A (ja) 2006-04-13
EP1586005A4 (de) 2009-05-13
AU2002351269A1 (en) 2004-06-30
CN1836191A (zh) 2006-09-20

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties