ATE467701T1 - Verfahren zur herstellung von quantenpunkten aus indiumnitrid und erzeugnis enthaltend diese quantenpunkten - Google Patents

Verfahren zur herstellung von quantenpunkten aus indiumnitrid und erzeugnis enthaltend diese quantenpunkten

Info

Publication number
ATE467701T1
ATE467701T1 AT03758390T AT03758390T ATE467701T1 AT E467701 T1 ATE467701 T1 AT E467701T1 AT 03758390 T AT03758390 T AT 03758390T AT 03758390 T AT03758390 T AT 03758390T AT E467701 T1 ATE467701 T1 AT E467701T1
Authority
AT
Austria
Prior art keywords
quantum dots
indium nitride
product containing
crystalline buffer
producing
Prior art date
Application number
AT03758390T
Other languages
English (en)
Inventor
Olivier Briot
Bernard Gil
Sandra Ruffenach
Original Assignee
Centre Nat Rech Scient
Univ Montpellier Ii
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient, Univ Montpellier Ii filed Critical Centre Nat Rech Scient
Application granted granted Critical
Publication of ATE467701T1 publication Critical patent/ATE467701T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT03758390T 2003-08-08 2003-10-22 Verfahren zur herstellung von quantenpunkten aus indiumnitrid und erzeugnis enthaltend diese quantenpunkten ATE467701T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49345203P 2003-08-08 2003-08-08
PCT/IB2003/004655 WO2005014897A1 (en) 2003-08-08 2003-10-22 Method to manufacture indium nitride quantum dots

Publications (1)

Publication Number Publication Date
ATE467701T1 true ATE467701T1 (de) 2010-05-15

Family

ID=34135248

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03758390T ATE467701T1 (de) 2003-08-08 2003-10-22 Verfahren zur herstellung von quantenpunkten aus indiumnitrid und erzeugnis enthaltend diese quantenpunkten

Country Status (6)

Country Link
US (1) US6966948B2 (de)
EP (1) EP1658394B1 (de)
AT (1) ATE467701T1 (de)
AU (1) AU2003274409A1 (de)
DE (1) DE60332559D1 (de)
WO (1) WO2005014897A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008535215A (ja) * 2005-03-24 2008-08-28 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ Ｉｉｉ族窒化物白色発光ダイオード
US20070034858A1 (en) * 2005-08-11 2007-02-15 Hock Ng Light-emitting diodes with quantum dots
FR2932608B1 (fr) * 2008-06-13 2011-04-22 Centre Nat Rech Scient Procede de croissance de nitrure d'elements du groupe iii.
US20120204957A1 (en) * 2011-02-10 2012-08-16 David Nicholls METHOD FOR GROWING AlInGaN LAYER

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4138930B2 (ja) * 1998-03-17 2008-08-27 富士通株式会社 量子半導体装置および量子半導体発光装置
US6558995B1 (en) * 1998-07-31 2003-05-06 Emory University Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots
JP3415068B2 (ja) * 1999-04-30 2003-06-09 理化学研究所 位置制御された液滴エピタキシーによる窒化物半導体の量子ドットの形成方法、量子コンピュータにおける量子ビット素子構造および量子相関ゲート素子構造
JP3536056B2 (ja) * 1999-04-30 2004-06-07 独立行政法人理化学研究所 液滴エピタキシーによる窒化物半導体の量子ドットの形成方法
US6645885B2 (en) * 2001-09-27 2003-11-11 The National University Of Singapore Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
KR100568701B1 (ko) * 2002-06-19 2006-04-07 니폰덴신뎅와 가부시키가이샤 반도체 발광 소자

Also Published As

Publication number Publication date
EP1658394A1 (de) 2006-05-24
US6966948B2 (en) 2005-11-22
EP1658394B1 (de) 2010-05-12
WO2005014897A1 (en) 2005-02-17
AU2003274409A1 (en) 2005-02-25
DE60332559D1 (de) 2010-06-24
US20050028726A1 (en) 2005-02-10

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