ATE451741T1 - Verfahren zum herstellen eines vertikalresonator- oberflächenemissionslasers mit photonischem kristall oder photonischem bandabstand - Google Patents

Verfahren zum herstellen eines vertikalresonator- oberflächenemissionslasers mit photonischem kristall oder photonischem bandabstand

Info

Publication number
ATE451741T1
ATE451741T1 AT07785758T AT07785758T ATE451741T1 AT E451741 T1 ATE451741 T1 AT E451741T1 AT 07785758 T AT07785758 T AT 07785758T AT 07785758 T AT07785758 T AT 07785758T AT E451741 T1 ATE451741 T1 AT E451741T1
Authority
AT
Austria
Prior art keywords
photonic
nano
micro
making
emission laser
Prior art date
Application number
AT07785758T
Other languages
English (en)
Inventor
Dan Birkedal
Svend Bischoff
Michael Juhl
Magnus Hald Madsen
Francis Pascal Romstad
Original Assignee
Alight Photonics Aps
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alight Photonics Aps filed Critical Alight Photonics Aps
Application granted granted Critical
Publication of ATE451741T1 publication Critical patent/ATE451741T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lasers (AREA)
  • Optical Integrated Circuits (AREA)
AT07785758T 2006-05-29 2007-05-29 Verfahren zum herstellen eines vertikalresonator- oberflächenemissionslasers mit photonischem kristall oder photonischem bandabstand ATE451741T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DKPA200600728 2006-05-29
PCT/DK2007/050061 WO2007137588A2 (en) 2006-05-29 2007-05-29 A method for fabricating a photonic crystal or photonic bandgap vertical-cavity surface-emitting laser

Publications (1)

Publication Number Publication Date
ATE451741T1 true ATE451741T1 (de) 2009-12-15

Family

ID=37891606

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07785758T ATE451741T1 (de) 2006-05-29 2007-05-29 Verfahren zum herstellen eines vertikalresonator- oberflächenemissionslasers mit photonischem kristall oder photonischem bandabstand

Country Status (8)

Country Link
US (1) US7883914B2 (de)
EP (1) EP2033281B1 (de)
JP (1) JP5308331B2 (de)
CN (1) CN101467313B (de)
AT (1) ATE451741T1 (de)
DE (1) DE602007003726D1 (de)
DK (1) DK2033281T3 (de)
WO (1) WO2007137588A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009170508A (ja) * 2008-01-11 2009-07-30 Furukawa Electric Co Ltd:The 面発光半導体レーザ及びその製造方法
JP5006242B2 (ja) * 2008-03-31 2012-08-22 古河電気工業株式会社 面発光半導体レーザ素子
US9014231B2 (en) 2012-02-02 2015-04-21 The Board Of Trustees Of The Leland Stanford Junior University Vertical cavity surface emitting laser nanoscope for near-field applications
CN109861078B (zh) * 2019-04-02 2021-01-05 中国科学院长春光学精密机械与物理研究所 一种面发射激光器及一种面发射激光器阵列
US11616344B2 (en) 2020-05-04 2023-03-28 International Business Machines Corporation Fabrication of semiconductor structures

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6256330B1 (en) * 1996-12-02 2001-07-03 Lacomb Ronald Bruce Gain and index tailored single mode semiconductor laser
JP3783411B2 (ja) * 1997-08-15 2006-06-07 富士ゼロックス株式会社 表面発光型半導体レーザ
US6507595B1 (en) * 1999-11-22 2003-01-14 Avalon Photonics Vertical-cavity surface-emitting laser comprised of single laser elements arranged on a common substrate
US6570905B1 (en) * 2000-11-02 2003-05-27 U-L-M Photonics Gmbh Vertical cavity surface emitting laser with reduced parasitic capacitance
US6727520B2 (en) * 2000-12-29 2004-04-27 Honeywell International Inc. Spatially modulated reflector for an optoelectronic device
CN1263208C (zh) * 2001-03-09 2006-07-05 阿莱特技术公司 用横向带隙构造模式控制的垂直空腔表面发射激光器及其制造方法
US6534331B2 (en) * 2001-07-24 2003-03-18 Luxnet Corporation Method for making a vertical-cavity surface emitting laser with improved current confinement
JP4113576B2 (ja) * 2002-05-28 2008-07-09 株式会社リコー 面発光半導体レーザおよび光伝送モジュールおよび光交換装置および光伝送システム
US7085301B2 (en) * 2002-07-12 2006-08-01 The Board Of Trustees Of The University Of Illinois Photonic crystal single transverse mode defect structure for vertical cavity surface emitting laser
US20050265415A1 (en) * 2004-05-28 2005-12-01 Lambkin John D Laser diode and method of manufacture
JP4602701B2 (ja) * 2004-06-08 2010-12-22 株式会社リコー 面発光レーザ及び光伝送システム
JP2006344667A (ja) * 2005-06-07 2006-12-21 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法、光モジュール、並びに、光伝達装置
DK1820244T3 (da) 2004-11-29 2013-09-02 Alight Photonics Aps Enkelt-bølgetype fotoniske-krystal vcsel's
JP4027392B2 (ja) * 2005-04-28 2007-12-26 キヤノン株式会社 垂直共振器型面発光レーザ装置
JP2007142375A (ja) * 2005-10-20 2007-06-07 Furukawa Electric Co Ltd:The 面発光レーザ素子及びその製造方法
JP4548345B2 (ja) * 2006-01-12 2010-09-22 セイコーエプソン株式会社 面発光型半導体レーザ
JP2007234824A (ja) * 2006-02-28 2007-09-13 Canon Inc 垂直共振器型面発光レーザ

Also Published As

Publication number Publication date
JP2009539236A (ja) 2009-11-12
US20090203158A1 (en) 2009-08-13
CN101467313B (zh) 2010-10-13
EP2033281B1 (de) 2009-12-09
WO2007137588A3 (en) 2008-01-24
JP5308331B2 (ja) 2013-10-09
US7883914B2 (en) 2011-02-08
WO2007137588A2 (en) 2007-12-06
DE602007003726D1 (de) 2010-01-21
EP2033281A2 (de) 2009-03-11
DK2033281T3 (da) 2010-03-29
CN101467313A (zh) 2009-06-24

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