ATE419651T1 - Mos-feldeffekttransistor mit hilfselektrode - Google Patents
Mos-feldeffekttransistor mit hilfselektrodeInfo
- Publication number
- ATE419651T1 ATE419651T1 AT99963211T AT99963211T ATE419651T1 AT E419651 T1 ATE419651 T1 AT E419651T1 AT 99963211 T AT99963211 T AT 99963211T AT 99963211 T AT99963211 T AT 99963211T AT E419651 T1 ATE419651 T1 AT E419651T1
- Authority
- AT
- Austria
- Prior art keywords
- field effect
- effect transistor
- auxiliary electrode
- mos field
- mos
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19854915A DE19854915C2 (de) | 1998-11-27 | 1998-11-27 | MOS-Feldeffekttransistor mit Hilfselektrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE419651T1 true ATE419651T1 (de) | 2009-01-15 |
Family
ID=7889314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT99963211T ATE419651T1 (de) | 1998-11-27 | 1999-11-04 | Mos-feldeffekttransistor mit hilfselektrode |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3859969B2 (ja) |
| KR (1) | KR100401278B1 (ja) |
| AT (1) | ATE419651T1 (ja) |
| DE (1) | DE59914942D1 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6677641B2 (en) * | 2001-10-17 | 2004-01-13 | Fairchild Semiconductor Corporation | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
| US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
| WO2009110229A1 (ja) * | 2008-03-07 | 2009-09-11 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
-
1999
- 1999-11-04 DE DE59914942T patent/DE59914942D1/de not_active Expired - Lifetime
- 1999-11-04 JP JP2000585937A patent/JP3859969B2/ja not_active Expired - Fee Related
- 1999-11-04 AT AT99963211T patent/ATE419651T1/de not_active IP Right Cessation
- 1999-11-04 KR KR10-2000-7008206A patent/KR100401278B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010034433A (ko) | 2001-04-25 |
| KR100401278B1 (ko) | 2003-10-17 |
| DE59914942D1 (de) | 2009-02-12 |
| JP3859969B2 (ja) | 2006-12-20 |
| JP2002531952A (ja) | 2002-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69404500D1 (de) | Hochspannungs-MOS-Transistor mit ausgedehntem Drain | |
| DE60009214D1 (de) | Leistungs MOSFET mit vorgespanntem Gate | |
| DE69941615D1 (de) | Gate-Schaltung | |
| DE69838633D1 (de) | Konstantstrom-CMOS-Ausgangstreiberschaltung mit Dual-Gate-Transistoren | |
| DE50015742D1 (de) | Trench-mos-transistor | |
| DE60028850D1 (de) | Bipolartransistor mit isolierter Gate-Elektrode | |
| GB2359193B (en) | Transistor with notched gate | |
| IL143078A0 (en) | Field effect transistor structure with abrupt source/drain junctions | |
| NL1013625A1 (nl) | Laterale hoogspanning halfgeleiderinrichting. | |
| DE69504128D1 (de) | Modulationsdotierter Feldeffekttransistor | |
| DE69921003D1 (de) | Waschbeckenabflussanordnung | |
| DE69724578D1 (de) | SOI-MOS-Feldeffekttransistor | |
| DE59915218D1 (de) | Korotron mit Gegenelektrode | |
| DE69615423D1 (de) | Feldeffekttransistor mit kammartiger Elektrodenstruktur | |
| DE69936899D1 (de) | Isolierter Feldeffekttransistor mit elektrischer Feldplatte | |
| DE69730073D1 (de) | Doppelheteroübergang-Feldeffekttransistor | |
| DE60124048D1 (de) | Feld-effekt-transistor | |
| DE69508826D1 (de) | Konstantstromquelle mit Feldeffekttransistor | |
| FI103617B (fi) | Kanavatransistorit | |
| DE60032232D1 (de) | FET-Transistor mit Leistungsdetektor | |
| DE59813907D1 (de) | Leistungstransistorzelle | |
| FR2802339B1 (fr) | Transistor mos durcis | |
| DE69808161D1 (de) | Feldeffekttransistor | |
| DE69917909D1 (de) | Elektroden | |
| DE69629456D1 (de) | Feldeffekttransistor mit verminderter Verzögerungsänderung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| REN | Ceased due to non-payment of the annual fee |