ATE419651T1 - MOS FIELD EFFECT TRANSISTOR WITH AUXILIARY ELECTRODE - Google Patents

MOS FIELD EFFECT TRANSISTOR WITH AUXILIARY ELECTRODE

Info

Publication number
ATE419651T1
ATE419651T1 AT99963211T AT99963211T ATE419651T1 AT E419651 T1 ATE419651 T1 AT E419651T1 AT 99963211 T AT99963211 T AT 99963211T AT 99963211 T AT99963211 T AT 99963211T AT E419651 T1 ATE419651 T1 AT E419651T1
Authority
AT
Austria
Prior art keywords
field effect
effect transistor
auxiliary electrode
mos field
mos
Prior art date
Application number
AT99963211T
Other languages
German (de)
Inventor
Jenoe Tihanyi
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19854915A external-priority patent/DE19854915C2/en
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Application granted granted Critical
Publication of ATE419651T1 publication Critical patent/ATE419651T1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AT99963211T 1998-11-27 1999-11-04 MOS FIELD EFFECT TRANSISTOR WITH AUXILIARY ELECTRODE ATE419651T1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19854915A DE19854915C2 (en) 1998-11-27 1998-11-27 MOS field effect transistor with auxiliary electrode

Publications (1)

Publication Number Publication Date
ATE419651T1 true ATE419651T1 (en) 2009-01-15

Family

ID=7889314

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99963211T ATE419651T1 (en) 1998-11-27 1999-11-04 MOS FIELD EFFECT TRANSISTOR WITH AUXILIARY ELECTRODE

Country Status (4)

Country Link
JP (1) JP3859969B2 (en)
KR (1) KR100401278B1 (en)
AT (1) ATE419651T1 (en)
DE (1) DE59914942D1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6677641B2 (en) * 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
JP5182359B2 (en) * 2008-03-07 2013-04-17 三菱電機株式会社 Silicon carbide semiconductor device

Also Published As

Publication number Publication date
DE59914942D1 (en) 2009-02-12
KR20010034433A (en) 2001-04-25
JP2002531952A (en) 2002-09-24
KR100401278B1 (en) 2003-10-17
JP3859969B2 (en) 2006-12-20

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Legal Events

Date Code Title Description
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