ATE411620T1 - Polychromatische leds und diesbezügliche halbleiterbauelemente - Google Patents

Polychromatische leds und diesbezügliche halbleiterbauelemente

Info

Publication number
ATE411620T1
ATE411620T1 AT05791694T AT05791694T ATE411620T1 AT E411620 T1 ATE411620 T1 AT E411620T1 AT 05791694 T AT05791694 T AT 05791694T AT 05791694 T AT05791694 T AT 05791694T AT E411620 T1 ATE411620 T1 AT E411620T1
Authority
AT
Austria
Prior art keywords
semiconductor device
junction
semiconductor components
potential well
related semiconductor
Prior art date
Application number
AT05791694T
Other languages
German (de)
English (en)
Inventor
Thomas Miller
Michael Haase
Xiaoguang Sun
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Application granted granted Critical
Publication of ATE411620T1 publication Critical patent/ATE411620T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
AT05791694T 2004-12-09 2005-08-22 Polychromatische leds und diesbezügliche halbleiterbauelemente ATE411620T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/009,241 US7745814B2 (en) 2004-12-09 2004-12-09 Polychromatic LED's and related semiconductor devices

Publications (1)

Publication Number Publication Date
ATE411620T1 true ATE411620T1 (de) 2008-10-15

Family

ID=36046862

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05791694T ATE411620T1 (de) 2004-12-09 2005-08-22 Polychromatische leds und diesbezügliche halbleiterbauelemente

Country Status (8)

Country Link
US (2) US7745814B2 (https=)
EP (1) EP1825526B1 (https=)
JP (2) JP2008523612A (https=)
KR (1) KR101180248B1 (https=)
CN (1) CN100557830C (https=)
AT (1) ATE411620T1 (https=)
DE (1) DE602005010475D1 (https=)
WO (1) WO2006062560A1 (https=)

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EP2033234A4 (en) * 2006-06-12 2013-11-06 3M Innovative Properties Co LED ARRANGEMENT WITH RE-ESTIMATING SEMICONDUCTOR CONSTRUCTION AND CONVERGING OPTICAL ELEMENT
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US8941566B2 (en) * 2007-03-08 2015-01-27 3M Innovative Properties Company Array of luminescent elements
US8469575B2 (en) 2007-05-20 2013-06-25 3M Innovative Properties Company Backlight and display system using same
US9028108B2 (en) * 2007-05-20 2015-05-12 3M Innovative Properties Company Collimating light injectors for edge-lit backlights
CN101681597A (zh) * 2007-05-20 2010-03-24 3M创新有限公司 有效利用有色led光源的白光背光源等
EP2160644B1 (en) 2007-05-20 2019-05-01 3M Innovative Properties Company Semi-specular components in hollow cavity light recycling backlights
CN101681057B (zh) 2007-05-20 2012-07-04 3M创新有限公司 光循环型薄壁中空腔体背光源
EP2232590A4 (en) * 2007-12-10 2013-12-25 3M Innovative Properties Co SEMICONDUCTOR LIGHT ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF
JP5702151B2 (ja) * 2008-02-07 2015-04-15 スリーエム イノベイティブ プロパティズ カンパニー 構造化フィルムを有する中空のバックライト
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US8757858B2 (en) * 2008-06-04 2014-06-24 3M Innovative Properties Company Hollow backlight with tilted light source
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CN102668044A (zh) * 2009-11-18 2012-09-12 3M创新有限公司 用于ii-vi族半导体的新型湿蚀刻剂及方法
US9431584B2 (en) 2010-06-03 2016-08-30 3M Innovative Properties Company Light converting and emitting device with suppressed dark-line defects
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Also Published As

Publication number Publication date
US20100224889A1 (en) 2010-09-09
JP2008523612A (ja) 2008-07-03
CN100557830C (zh) 2009-11-04
KR20070089218A (ko) 2007-08-30
US8148741B2 (en) 2012-04-03
WO2006062560A1 (en) 2006-06-15
CN101076898A (zh) 2007-11-21
EP1825526B1 (en) 2008-10-15
US20060124918A1 (en) 2006-06-15
JP2011187977A (ja) 2011-09-22
KR101180248B1 (ko) 2012-09-05
DE602005010475D1 (de) 2008-11-27
US7745814B2 (en) 2010-06-29
EP1825526A1 (en) 2007-08-29

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