ATE403235T1 - Bipolartransistor - Google Patents

Bipolartransistor

Info

Publication number
ATE403235T1
ATE403235T1 AT01931913T AT01931913T ATE403235T1 AT E403235 T1 ATE403235 T1 AT E403235T1 AT 01931913 T AT01931913 T AT 01931913T AT 01931913 T AT01931913 T AT 01931913T AT E403235 T1 ATE403235 T1 AT E403235T1
Authority
AT
Austria
Prior art keywords
base
bipolar transistor
transistor
minority
voltage
Prior art date
Application number
AT01931913T
Other languages
English (en)
Inventor
Timothy J Phillips
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Application granted granted Critical
Publication of ATE403235T1 publication Critical patent/ATE403235T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
AT01931913T 2000-05-30 2001-05-24 Bipolartransistor ATE403235T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0012925.4A GB0012925D0 (en) 2000-05-30 2000-05-30 Bipolar transistor

Publications (1)

Publication Number Publication Date
ATE403235T1 true ATE403235T1 (de) 2008-08-15

Family

ID=9892496

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01931913T ATE403235T1 (de) 2000-05-30 2001-05-24 Bipolartransistor

Country Status (11)

Country Link
US (1) US6674104B2 (de)
EP (1) EP1285465B1 (de)
JP (1) JP2003535475A (de)
KR (1) KR100752538B1 (de)
CN (1) CN1225798C (de)
AT (1) ATE403235T1 (de)
AU (1) AU2001258602A1 (de)
CA (1) CA2407364C (de)
DE (1) DE60135112D1 (de)
GB (1) GB0012925D0 (de)
WO (1) WO2001093337A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0200067D0 (en) 2002-01-03 2002-02-20 Qinetiq Ltd Wide bandgap transistors
DE10318422B4 (de) * 2003-04-23 2006-08-10 Infineon Technologies Ag Hochfrequenz-Bipolartransistor mit Silizidregion und Verfahren zur Herstellung desselben
GB0326993D0 (en) 2003-11-20 2003-12-24 Qinetiq Ltd Strained semiconductor devices
DE102004037252A1 (de) * 2004-07-31 2006-03-23 Atmel Germany Gmbh Verfahren zur Integration von drei Bipolartransistoren in einem Halbleiterkörper, Mehrschichtbauelement und Halbleiteranordnung
CN101995235B (zh) * 2010-10-21 2012-07-18 天津大学 一种基于微波二极管的动态应变测量装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4395722A (en) 1980-10-21 1983-07-26 The United States Of America As Represented By The Secretary Of The Army Heterojunction transistor
JP2800299B2 (ja) * 1989-08-31 1998-09-21 横河電機株式会社 ヘテロ構造半導体装置
JP3061406B2 (ja) * 1990-09-28 2000-07-10 株式会社東芝 半導体装置
GB9100351D0 (en) 1991-01-08 1991-02-20 Secr Defence Semiconductor heterostructure device
GB9524414D0 (en) 1995-11-29 1996-01-31 Secr Defence Low resistance contact semiconductor device

Also Published As

Publication number Publication date
CA2407364C (en) 2010-02-02
DE60135112D1 (de) 2008-09-11
KR20030028477A (ko) 2003-04-08
AU2001258602A1 (en) 2001-12-11
WO2001093337A1 (en) 2001-12-06
GB0012925D0 (en) 2000-07-19
US20030183845A1 (en) 2003-10-02
CA2407364A1 (en) 2001-12-06
EP1285465B1 (de) 2008-07-30
US6674104B2 (en) 2004-01-06
CN1432196A (zh) 2003-07-23
EP1285465A1 (de) 2003-02-26
JP2003535475A (ja) 2003-11-25
KR100752538B1 (ko) 2007-08-29
CN1225798C (zh) 2005-11-02

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties