ATE397322T1 - Standard-cmos-hochspannungs-gegentakttreiber - Google Patents

Standard-cmos-hochspannungs-gegentakttreiber

Info

Publication number
ATE397322T1
ATE397322T1 AT02368002T AT02368002T ATE397322T1 AT E397322 T1 ATE397322 T1 AT E397322T1 AT 02368002 T AT02368002 T AT 02368002T AT 02368002 T AT02368002 T AT 02368002T AT E397322 T1 ATE397322 T1 AT E397322T1
Authority
AT
Austria
Prior art keywords
pfet
gate
coupled
drain
source
Prior art date
Application number
AT02368002T
Other languages
English (en)
Inventor
Dirk Killat
Original Assignee
Dialog Semiconductor Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dialog Semiconductor Gmbh filed Critical Dialog Semiconductor Gmbh
Application granted granted Critical
Publication of ATE397322T1 publication Critical patent/ATE397322T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
AT02368002T 2002-01-03 2002-01-03 Standard-cmos-hochspannungs-gegentakttreiber ATE397322T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02368002A EP1326337B1 (de) 2002-01-03 2002-01-03 Standard-CMOS-Hochspannungs-Gegentakttreiber

Publications (1)

Publication Number Publication Date
ATE397322T1 true ATE397322T1 (de) 2008-06-15

Family

ID=8185765

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02368002T ATE397322T1 (de) 2002-01-03 2002-01-03 Standard-cmos-hochspannungs-gegentakttreiber

Country Status (6)

Country Link
US (1) US6573752B1 (de)
EP (1) EP1326337B1 (de)
AT (1) ATE397322T1 (de)
DE (1) DE60226835D1 (de)
ES (1) ES2307715T3 (de)
PT (1) PT1326337E (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050275027A1 (en) * 2003-09-09 2005-12-15 Micrel, Incorporated ESD protection for integrated circuits
DE102004019345B4 (de) 2004-04-21 2007-02-08 Austriamicrosystems Ag Ausgangsstufenanordnung
TW200638679A (en) * 2005-04-28 2006-11-01 Sunplus Technology Co Ltd Logic gate device with low electromagnetic interference
US7485984B2 (en) * 2006-05-12 2009-02-03 Delphi Technologies, Inc. Control module
US8026745B2 (en) 2009-03-16 2011-09-27 Apple Inc. Input/output driver with controlled transistor voltages
US9331865B2 (en) * 2013-12-03 2016-05-03 Nxp B.V. Comparator circuit
US9831764B2 (en) * 2014-11-20 2017-11-28 Stmicroelectronics International N.V. Scalable protection voltage generator
DE102016111641A1 (de) * 2016-06-24 2017-12-28 Infineon Technologies Ag Schalter
EP3352042B1 (de) * 2017-01-18 2021-04-07 ams AG Ausgangsschaltung und verfahren zur bereitstellung eines ausgangsstroms
TWI606693B (zh) * 2017-01-25 2017-11-21 奕力科技股份有限公司 高壓電源裝置
US10095329B1 (en) 2017-03-28 2018-10-09 Microsoft Technology Licensing, Llc Discrete high impedance implementation on push-pull outputs
EP3855295A1 (de) 2020-01-24 2021-07-28 Microsoft Technology Licensing, LLC Treiberschaltung und verfahren zur ansteuerung einer kapazitiven last
US12132473B2 (en) 2023-03-13 2024-10-29 Nxp Usa, Inc. Switch with cascode arrangement
US12126338B1 (en) * 2023-04-04 2024-10-22 Nxp Usa, Inc. Switch with cascode arrangement

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2587157B1 (fr) * 1985-09-06 1987-11-20 Thomson Csf Dispositif de commutation de tension
US4906904A (en) * 1989-06-27 1990-03-06 Digital Equipment Corporation Cathode ray tube deflection circuit with solid state switch
DE4428548B4 (de) * 1994-08-12 2007-11-22 Robert Bosch Gmbh Schaltungsanordnung mit einem Feldeffekttransistor
US6005415A (en) * 1997-07-18 1999-12-21 International Business Machines Corporation Switching circuit for large voltages
US6157223A (en) 1997-12-23 2000-12-05 Texas Instruments Incorporated Output buffer with switching PMOS drivers
US6081132A (en) 1998-03-09 2000-06-27 Intel Corporation High voltage drive output buffer for low Voltage integrated circuits
US6396326B1 (en) * 2000-06-30 2002-05-28 Intel Corporation High voltage driver having overshoot/undershoot protection circuitry

Also Published As

Publication number Publication date
EP1326337B1 (de) 2008-05-28
PT1326337E (pt) 2008-09-08
EP1326337A1 (de) 2003-07-09
ES2307715T3 (es) 2008-12-01
DE60226835D1 (de) 2008-07-10
US6573752B1 (en) 2003-06-03

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