PT1326337E - Excitador simétrico de alta tensão em cmos standard - Google Patents

Excitador simétrico de alta tensão em cmos standard Download PDF

Info

Publication number
PT1326337E
PT1326337E PT02368002T PT02368002T PT1326337E PT 1326337 E PT1326337 E PT 1326337E PT 02368002 T PT02368002 T PT 02368002T PT 02368002 T PT02368002 T PT 02368002T PT 1326337 E PT1326337 E PT 1326337E
Authority
PT
Portugal
Prior art keywords
pfet
gate
coupled
drain
source
Prior art date
Application number
PT02368002T
Other languages
English (en)
Inventor
Dirk Killat
Original Assignee
Dialog Semiconductor Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dialog Semiconductor Gmbh filed Critical Dialog Semiconductor Gmbh
Publication of PT1326337E publication Critical patent/PT1326337E/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
PT02368002T 2002-01-03 2002-01-03 Excitador simétrico de alta tensão em cmos standard PT1326337E (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02368002A EP1326337B1 (en) 2002-01-03 2002-01-03 High voltage push-pull driver on standard CMOS

Publications (1)

Publication Number Publication Date
PT1326337E true PT1326337E (pt) 2008-09-08

Family

ID=8185765

Family Applications (1)

Application Number Title Priority Date Filing Date
PT02368002T PT1326337E (pt) 2002-01-03 2002-01-03 Excitador simétrico de alta tensão em cmos standard

Country Status (6)

Country Link
US (1) US6573752B1 (pt)
EP (1) EP1326337B1 (pt)
AT (1) ATE397322T1 (pt)
DE (1) DE60226835D1 (pt)
ES (1) ES2307715T3 (pt)
PT (1) PT1326337E (pt)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050275027A1 (en) * 2003-09-09 2005-12-15 Micrel, Incorporated ESD protection for integrated circuits
DE102004019345B4 (de) * 2004-04-21 2007-02-08 Austriamicrosystems Ag Ausgangsstufenanordnung
TW200638679A (en) * 2005-04-28 2006-11-01 Sunplus Technology Co Ltd Logic gate device with low electromagnetic interference
US7485984B2 (en) * 2006-05-12 2009-02-03 Delphi Technologies, Inc. Control module
US8026745B2 (en) 2009-03-16 2011-09-27 Apple Inc. Input/output driver with controlled transistor voltages
US9331865B2 (en) * 2013-12-03 2016-05-03 Nxp B.V. Comparator circuit
US9831764B2 (en) * 2014-11-20 2017-11-28 Stmicroelectronics International N.V. Scalable protection voltage generator
DE102016111641A1 (de) 2016-06-24 2017-12-28 Infineon Technologies Ag Schalter
EP3352042B1 (en) * 2017-01-18 2021-04-07 ams AG Output circuit and method for providing an output current
TWI606693B (zh) * 2017-01-25 2017-11-21 奕力科技股份有限公司 高壓電源裝置
US10095329B1 (en) 2017-03-28 2018-10-09 Microsoft Technology Licensing, Llc Discrete high impedance implementation on push-pull outputs

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2587157B1 (fr) * 1985-09-06 1987-11-20 Thomson Csf Dispositif de commutation de tension
US4906904A (en) * 1989-06-27 1990-03-06 Digital Equipment Corporation Cathode ray tube deflection circuit with solid state switch
DE4428548B4 (de) * 1994-08-12 2007-11-22 Robert Bosch Gmbh Schaltungsanordnung mit einem Feldeffekttransistor
US6005415A (en) * 1997-07-18 1999-12-21 International Business Machines Corporation Switching circuit for large voltages
US6157223A (en) 1997-12-23 2000-12-05 Texas Instruments Incorporated Output buffer with switching PMOS drivers
US6081132A (en) 1998-03-09 2000-06-27 Intel Corporation High voltage drive output buffer for low Voltage integrated circuits
US6396326B1 (en) * 2000-06-30 2002-05-28 Intel Corporation High voltage driver having overshoot/undershoot protection circuitry

Also Published As

Publication number Publication date
EP1326337A1 (en) 2003-07-09
EP1326337B1 (en) 2008-05-28
ATE397322T1 (de) 2008-06-15
DE60226835D1 (de) 2008-07-10
ES2307715T3 (es) 2008-12-01
US6573752B1 (en) 2003-06-03

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