ATE382957T1 - Chemisch inertes megaschallübertragungssystem - Google Patents

Chemisch inertes megaschallübertragungssystem

Info

Publication number
ATE382957T1
ATE382957T1 AT00959488T AT00959488T ATE382957T1 AT E382957 T1 ATE382957 T1 AT E382957T1 AT 00959488 T AT00959488 T AT 00959488T AT 00959488 T AT00959488 T AT 00959488T AT E382957 T1 ATE382957 T1 AT E382957T1
Authority
AT
Austria
Prior art keywords
resonator
megasound
transmission system
chemically inert
container
Prior art date
Application number
AT00959488T
Other languages
English (en)
Inventor
Mark Beck
Richard Vennerbeck
Original Assignee
Product Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/384,947 external-priority patent/US6188162B1/en
Application filed by Product Systems Inc filed Critical Product Systems Inc
Application granted granted Critical
Publication of ATE382957T1 publication Critical patent/ATE382957T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
    • B06B1/0611—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements in a pile
    • B06B1/0618—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements in a pile of piezo- and non-piezoelectric elements, e.g. 'Tonpilz'
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B3/00—Methods or apparatus specially adapted for transmitting mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B3/02—Methods or apparatus specially adapted for transmitting mechanical vibrations of infrasonic, sonic, or ultrasonic frequency involving a change of amplitude
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B17/00—Methods preventing fouling
    • B08B17/02—Preventing deposition of fouling or of dust
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
    • G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
    • G10K11/02—Mechanical acoustic impedances; Impedance matching, e.g. by horns; Acoustic resonators
    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
    • G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
    • G10K11/02—Mechanical acoustic impedances; Impedance matching, e.g. by horns; Acoustic resonators
    • G10K11/025—Mechanical acoustic impedances; Impedance matching, e.g. by horns; Acoustic resonators horns for impedance matching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
AT00959488T 1999-08-27 2000-08-25 Chemisch inertes megaschallübertragungssystem ATE382957T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/384,947 US6188162B1 (en) 1999-08-27 1999-08-27 High power megasonic transducer
US15448199P 1999-09-17 1999-09-17
US09/543,204 US6222305B1 (en) 1999-08-27 2000-04-05 Chemically inert megasonic transducer system

Publications (1)

Publication Number Publication Date
ATE382957T1 true ATE382957T1 (de) 2008-01-15

Family

ID=27387593

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00959488T ATE382957T1 (de) 1999-08-27 2000-08-25 Chemisch inertes megaschallübertragungssystem

Country Status (8)

Country Link
US (2) US6222305B1 (de)
EP (1) EP1210738B1 (de)
KR (1) KR100681071B1 (de)
CN (1) CN1371531A (de)
AT (1) ATE382957T1 (de)
AU (1) AU7080400A (de)
DE (1) DE60037665T2 (de)
WO (1) WO2001017037A1 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222305B1 (en) 1999-08-27 2001-04-24 Product Systems Incorporated Chemically inert megasonic transducer system
US6904921B2 (en) * 2001-04-23 2005-06-14 Product Systems Incorporated Indium or tin bonded megasonic transducer systems
US6291180B1 (en) * 1999-09-29 2001-09-18 American Registry Of Pathology Ultrasound-mediated high-speed biological reaction and tissue processing
JP3660557B2 (ja) * 2000-04-13 2005-06-15 スター精密株式会社 電気音響変換器と電気音響変換器の取付構造
US6549860B1 (en) 2000-10-13 2003-04-15 Product Systems Incorporated Method and apparatus for tuning a megasonic transducer
US7518284B2 (en) * 2000-11-02 2009-04-14 Danfoss A/S Dielectric composite and a method of manufacturing a dielectric composite
US7548015B2 (en) 2000-11-02 2009-06-16 Danfoss A/S Multilayer composite and a method of making such
DE10054247C2 (de) * 2000-11-02 2002-10-24 Danfoss As Betätigungselement und Verfahren zu seiner Herstellung
US8181338B2 (en) * 2000-11-02 2012-05-22 Danfoss A/S Method of making a multilayer composite
US7105985B2 (en) * 2001-04-23 2006-09-12 Product Systems Incorporated Megasonic transducer with focused energy resonator
US20030015494A1 (en) * 2001-07-20 2003-01-23 Seagate Technology Llc Single layer resist lift-off process and apparatus for submicron structures
DE60239821D1 (de) * 2001-11-02 2011-06-01 Product Systems Inc Radialleistungs-megasonic-wandler
ES2299614T3 (es) * 2001-12-21 2008-06-01 Danfoss A/S Estructura de dispositivo dielectrico de accionamiento o deteccion y metodo para fabricar el mismo.
US6954021B2 (en) * 2002-07-12 2005-10-11 Applied Materials, Inc. Matching circuit for megasonic transducer device
AU2003263159A1 (en) 2002-09-20 2004-04-08 Danfoss A/S An elastomer actuator and a method of making an actuator
US7198055B2 (en) * 2002-09-30 2007-04-03 Lam Research Corporation Meniscus, vacuum, IPA vapor, drying manifold
US7810513B1 (en) * 2002-09-30 2010-10-12 Lam Research Corporation Substrate preparation using megasonic coupling fluid meniscus and methods, apparatus, and systems for implementing the same
US6955727B2 (en) * 2002-11-01 2005-10-18 Akrion, Llc Substrate process tank with acoustical source transmission and method of processing substrates
US20040227202A1 (en) * 2002-12-02 2004-11-18 Pesavento Philip V. Isotopically enriched piezoelectric devices and method for making the same
WO2004053782A1 (en) 2002-12-12 2004-06-24 Danfoss A/S Tactile sensor element and sensor array
US7868221B2 (en) * 2003-02-24 2011-01-11 Danfoss A/S Electro active elastic compression bandage
US7495371B2 (en) * 2003-09-08 2009-02-24 The Crest Group, Inc. Cleaning tank with sleeved ultrasonic transducer
US7362580B2 (en) * 2004-06-18 2008-04-22 Intel Corporation Electronic assembly having an indium wetting layer on a thermally conductive body
US20070228876A1 (en) * 2006-03-31 2007-10-04 Chien-Min Sung Diamond Frequency Control Devices and Associated Methods
DE102006026674A1 (de) * 2006-06-02 2007-12-06 Valeo Schalter Und Sensoren Gmbh Ultraschallsensor
US7732999B2 (en) 2006-11-03 2010-06-08 Danfoss A/S Direct acting capacitive transducer
US7880371B2 (en) * 2006-11-03 2011-02-01 Danfoss A/S Dielectric composite and a method of manufacturing a dielectric composite
US8327861B2 (en) * 2006-12-19 2012-12-11 Lam Research Corporation Megasonic precision cleaning of semiconductor process equipment components and parts
WO2009132650A2 (en) * 2008-04-30 2009-11-05 Danfoss A/S A power actuated valve
EP2294317B1 (de) * 2008-04-30 2013-04-17 Danfoss Polypower A/S Durch einen polymerwandler angetriebene pumpe
US8551251B2 (en) * 2011-04-28 2013-10-08 Lam Research Ag Ultrasonic treatment method and apparatus
US9166141B2 (en) 2011-09-09 2015-10-20 Dvx, Llc Process of manufacturing a piezopolymer transducer with matching layer
US8564177B2 (en) * 2011-09-09 2013-10-22 Dvx, Llc Piezopolymer transducer with matching layer
JP5303741B1 (ja) * 2011-12-28 2013-10-02 コニカミノルタ株式会社 情報記録媒体用ガラス基板の製造方法
US8891222B2 (en) 2012-02-14 2014-11-18 Danfoss A/S Capacitive transducer and a method for manufacturing a transducer
US8692442B2 (en) 2012-02-14 2014-04-08 Danfoss Polypower A/S Polymer transducer and a connector for a transducer
US20160114193A1 (en) * 2014-10-23 2016-04-28 Oleg Prus Multilayer ultrasound transducers for high-power transmission
DE102015113561A1 (de) * 2015-08-17 2017-02-23 Endress + Hauser Flowtec Ag Ultraschallwandler zum Einsatz in Ultraschall- Durchflussmessgeräten zur Messung der Durchflussgeschwindigkeit oder dem Volumendurchfluss von Medien in einer Rohrleitung sowie ein Verfahren zur Herstellung eines solchen Ultraschallwandlers
CN115022784B (zh) * 2022-06-07 2023-06-06 浙江大学 一种集成法兰接头和嵌套式前后盖板的低频压电换能器

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3042550A (en) 1958-05-23 1962-07-03 Corning Glass Works Solid delay line improvements
US3329408A (en) 1965-03-29 1967-07-04 Branson Instr Transducer mounting arrangement
US3590467A (en) 1968-11-15 1971-07-06 Corning Glass Works Method for bonding a crystal to a solid delay medium
US3747173A (en) 1969-10-15 1973-07-24 Tektronix Inc Method of sealing ceramic to nonmetalic using indium alloy seal
US3702448A (en) 1971-02-16 1972-11-07 Ampex Impedance matched ultrasonic delay line wherein electrodes consist of bismuth and indium
US3736533A (en) * 1971-12-15 1973-05-29 Rca Corp Apparatus for efficiently converting acoustic energy into electrical energy
US3798746A (en) 1972-10-10 1974-03-26 Rca Corp Process of making acousto-optic devices
US3765750A (en) 1972-11-01 1973-10-16 Honeywell Inc Acousto-optic device
US4118649A (en) 1977-05-25 1978-10-03 Rca Corporation Transducer assembly for megasonic cleaning
US4299449A (en) * 1978-07-12 1981-11-10 Nippon Electric Co., Ltd. Acoustooptic modulator
US4297607A (en) 1980-04-25 1981-10-27 Panametrics, Inc. Sealed, matched piezoelectric transducer
GB2132601B (en) 1982-12-23 1986-08-20 Ferranti Plc Joining articles of materials of different expansion coefficients
US4538466A (en) 1984-02-06 1985-09-03 Kerber George L Capacitance pressure transducer and method of fabrication therefor
US5119840A (en) 1986-04-07 1992-06-09 Kaijo Kenki Co., Ltd. Ultrasonic oscillating device and ultrasonic washing apparatus using the same
US4782701A (en) 1987-03-30 1988-11-08 Proctor Jr Thomas M Transducer for measuring transient tangential motion
US4998549A (en) 1987-04-29 1991-03-12 Verteq, Inc. Megasonic cleaning apparatus
US4804007A (en) 1987-04-29 1989-02-14 Verteq, Inc. Cleaning apparatus
US5037481B1 (en) 1987-04-29 1993-05-11 Verteq, Inc. Megasonic cleaning method
US4869278A (en) 1987-04-29 1989-09-26 Bran Mario E Megasonic cleaning apparatus
JPH01143223A (ja) 1987-11-28 1989-06-05 Toshiba Corp 半導体基板の表面処理方法
US4848643A (en) * 1988-09-19 1989-07-18 Honeywell Inc. Process of bonding plates
JP3039971B2 (ja) 1989-09-19 2000-05-08 株式会社日立製作所 接合型圧電装置及び製造方法並びに接合型圧電素子
JP2892742B2 (ja) * 1990-02-08 1999-05-17 東芝コンポーネンツ株式会社 メサ型半導体素子の洗浄方法
US5090432A (en) * 1990-10-16 1992-02-25 Verteq, Inc. Single wafer megasonic semiconductor wafer processing system
US5088510A (en) 1991-02-04 1992-02-18 Bannon John H Ultrasonic parts cleaning container
US5247954A (en) 1991-11-12 1993-09-28 Submicron Systems, Inc. Megasonic cleaning system
US5355048A (en) 1993-07-21 1994-10-11 Fsi International, Inc. Megasonic transducer for cleaning substrate surfaces
US5465897A (en) 1994-03-29 1995-11-14 The Regents Of The University Of California, Office Of Technology Transfer Bonded ultrasonic transducer and method for making
JP3232227B2 (ja) 1994-12-28 2001-11-26 川崎製鉄株式会社 不定形耐火物用改質マグネシア微粉末およびマグネシア含有不定形耐火物
JP3465427B2 (ja) 1995-07-28 2003-11-10 ソニー株式会社 圧電アクチュエーター及びその製造方法
US5732706A (en) 1996-03-22 1998-03-31 Lockheed Martin Ir Imaging Systems, Inc. Ultrasonic array with attenuating electrical interconnects
US6039059A (en) 1996-09-30 2000-03-21 Verteq, Inc. Wafer cleaning system
US6222305B1 (en) 1999-08-27 2001-04-24 Product Systems Incorporated Chemically inert megasonic transducer system
US6188162B1 (en) 1999-08-27 2001-02-13 Product Systems Incorporated High power megasonic transducer

Also Published As

Publication number Publication date
DE60037665T2 (de) 2009-01-08
US6222305B1 (en) 2001-04-24
EP1210738A4 (de) 2005-06-08
US20020050768A1 (en) 2002-05-02
KR20020025232A (ko) 2002-04-03
EP1210738B1 (de) 2008-01-02
WO2001017037A1 (en) 2001-03-08
AU7080400A (en) 2001-03-26
EP1210738A1 (de) 2002-06-05
CN1371531A (zh) 2002-09-25
KR100681071B1 (ko) 2007-02-08
DE60037665D1 (de) 2008-02-14
US6722379B2 (en) 2004-04-20

Similar Documents

Publication Publication Date Title
DE60037665D1 (de) Chemisch inertes megaschallübertragungssystem
TW200518197A (en) Substrate for nitride semiconductor growth
DE60231008D1 (de) Verfahren zur abscheidung von siliciumoxid und siliciumoxidnitrid mittels einzelwafer-niederdruck-cvd
TW200628643A (en) Low micropipe 100 mm silicon carbide wafer
TW200509220A (en) A substrate for stressed systems and a method of crystal growth on said substrate
GB2383588A (en) Single crystal diamond prepared by CVD
GB2416623B (en) Substrate of gallium nitride single crystal and process for producing the same
SG148897A1 (en) Methods of forming trench isolation regions
SG112879A1 (en) Gan single crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
MY118541A (en) A composition for cleaning and etching electronic display and substrate
MY135877A (en) Tungsten doped crucible and method for preparing same
DE60314648D1 (de) Einkristalliner diamant
EP1326290A3 (de) Verfahren zur Herstellung von Halbleitervorrichtungen
EP1313217A4 (de) Oberflächenwellenbauelement und verfahren zu seiner herstellung
WO2003084684A8 (en) In-situ local heating using megasonic transducer resonator
ATE515790T1 (de) Verbesserter puffer zum wachstum von gan auf saphir
AU2003299500A8 (en) Hafnium nitride buffer layers for growth of gan on silicon
FR2785473B1 (fr) Filtre faibles pertes a ondes acoustiques de surface sur substrat de quartz de coupe optimisee
DE69001030D1 (de) Substrat fuer erdlose kultur.
AU2003272580A1 (en) Fabrication of film bulk acoustic resonators on silicon less than110greater than wafers using crystal-orientation-dependent anisotropic etching
SG114463A1 (en) Multiple-step plasma etching process for silicon nitride
MXPA05010190A (es) Componentes ceramicos de carburo de silicio que tienen capa de oxido.
IT1257386B (it) Supporto rivestito con diamante.
AU2003222909A1 (en) Method for production of a layer of silicon carbide or a nitride of a group iii element on a suitable substrate
WO2008058270A3 (en) A susceptor and method of forming a led device using such susceptor

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification

Ref document number: 1210738

Country of ref document: EP