ATE354877T1 - Optisch gepumpte hochleistungshalbleiterlaser mit externem resonator - Google Patents

Optisch gepumpte hochleistungshalbleiterlaser mit externem resonator

Info

Publication number
ATE354877T1
ATE354877T1 AT99971158T AT99971158T ATE354877T1 AT E354877 T1 ATE354877 T1 AT E354877T1 AT 99971158 T AT99971158 T AT 99971158T AT 99971158 T AT99971158 T AT 99971158T AT E354877 T1 ATE354877 T1 AT E354877T1
Authority
AT
Austria
Prior art keywords
ops
lasers
optically
harmonic
frequency
Prior art date
Application number
AT99971158T
Other languages
English (en)
Inventor
Andrea Caprara
Juan L Chilla
Luis A Spinelli
Original Assignee
Coherent Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/179,022 external-priority patent/US5991318A/en
Priority claimed from US09/263,325 external-priority patent/US6285702B1/en
Application filed by Coherent Inc filed Critical Coherent Inc
Application granted granted Critical
Publication of ATE354877T1 publication Critical patent/ATE354877T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/082—Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094049—Guiding of the pump light
    • H01S3/094053—Fibre coupled pump, e.g. delivering pump light using a fibre or a fibre bundle
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/09408—Pump redundancy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/1083—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering using parametric generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/139—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H01S5/02484—Sapphire or diamond heat spreaders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
AT99971158T 1998-10-26 1999-10-18 Optisch gepumpte hochleistungshalbleiterlaser mit externem resonator ATE354877T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/179,022 US5991318A (en) 1998-10-26 1998-10-26 Intracavity frequency-converted optically-pumped semiconductor laser
US09/263,325 US6285702B1 (en) 1999-03-05 1999-03-05 High-power external-cavity optically-pumped semiconductor laser

Publications (1)

Publication Number Publication Date
ATE354877T1 true ATE354877T1 (de) 2007-03-15

Family

ID=26874925

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99971158T ATE354877T1 (de) 1998-10-26 1999-10-18 Optisch gepumpte hochleistungshalbleiterlaser mit externem resonator

Country Status (6)

Country Link
EP (2) EP1125349B1 (de)
JP (1) JP4837830B2 (de)
AT (1) ATE354877T1 (de)
DE (1) DE69935237T2 (de)
ES (1) ES2283149T3 (de)
WO (1) WO2000025398A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6370168B1 (en) * 1999-10-20 2002-04-09 Coherent, Inc. Intracavity frequency-converted optically-pumped semiconductor laser
DE10147888A1 (de) * 2001-09-28 2003-04-24 Osram Opto Semiconductors Gmbh Optisch gepumpter vertikal emittierender Halbleiterlaser
DE10260183A1 (de) 2002-12-20 2004-07-15 Osram Opto Semiconductors Gmbh Vertikal emittierender, optisch gepumpter Halbleiterlaser mit externem Resonator
JP2007110039A (ja) * 2005-10-17 2007-04-26 Mitsubishi Electric Corp 固体レーザ励起モジュール
JP6136284B2 (ja) 2012-03-13 2017-05-31 株式会社リコー 半導体積層体及び面発光レーザ素子
RU2623663C2 (ru) * 2012-04-26 2017-06-28 Конинклейке Филипс Н.В. Поверхностно-излучающий лазерный прибор с вертикальным внешним резонатором с оптической накачкой
DE102012208912B4 (de) 2012-05-25 2013-12-12 Crylas Crystal Laser Systems Gmbh Laseranordnung zur Erzeugung einerzweifach frequenzkonvertierten Laserstrahlung
JP2015196163A (ja) * 2014-03-31 2015-11-09 三菱重工業株式会社 加工装置及び加工方法
CN105898996B (zh) * 2016-06-08 2018-05-18 景德镇市宏亿电子科技有限公司 一种基于激光凹槽加工工艺的印刷电路板制作设备
EP3939132A4 (de) * 2019-03-11 2022-11-30 Pavilion Integration Corporation Stabiler uv-laser
CN115498492B (zh) * 2022-10-11 2024-12-20 河北工业大学 一种单频金刚石单晶紫外激光器
CN117353138B (zh) * 2023-10-17 2024-06-04 江阴创可激光技术有限公司 一种高功率激光透镜的散热结构
CN118980860B (zh) * 2024-08-23 2025-05-13 同济大学 一种基于感生荧光效应的425nm波长基准构建方法及装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2522338C3 (de) * 1974-05-20 1979-11-29 Hitachi, Ltd., Tokio Vorrichtung zur Erzeugung von kohärentem licht
US5257274A (en) * 1991-05-10 1993-10-26 Alliedsignal Inc. High power laser employing fiber optic delivery means
JPH05218556A (ja) * 1992-02-04 1993-08-27 Fuji Photo Film Co Ltd 固体レーザー
DE4228862A1 (de) * 1992-08-29 1994-03-03 Zeiss Carl Fa Laseranordnung zur Erzeugung von UV-Strahlung
DE4315580A1 (de) * 1993-05-11 1994-11-17 Fraunhofer Ges Forschung Anordnung aus Laserdioden und einem Kühlsystem sowie Verfahren zu deren Herstellung
JP3329066B2 (ja) * 1993-05-18 2002-09-30 松下電器産業株式会社 レーザ装置
US5436920A (en) * 1993-05-18 1995-07-25 Matsushita Electric Industrial Co., Ltd. Laser device
US5461637A (en) * 1994-03-16 1995-10-24 Micracor, Inc. High brightness, vertical cavity semiconductor lasers
FR2751796B1 (fr) * 1996-07-26 1998-08-28 Commissariat Energie Atomique Microlaser soilde, a pompage optique par laser semi-conducteur a cavite verticale
US6243407B1 (en) 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices

Also Published As

Publication number Publication date
EP1125349B1 (de) 2007-02-21
DE69935237T2 (de) 2007-11-08
DE69935237D1 (de) 2007-04-05
ES2283149T3 (es) 2007-10-16
JP4837830B2 (ja) 2011-12-14
EP1125349A1 (de) 2001-08-22
JP2002540590A (ja) 2002-11-26
WO2000025398A1 (en) 2000-05-04
EP1760848A3 (de) 2009-04-15
EP1760848A2 (de) 2007-03-07

Similar Documents

Publication Publication Date Title
US6097742A (en) High-power external-cavity optically-pumped semiconductor lasers
US7180928B2 (en) High-power external-cavity optically-pumped semiconductor lasers
ATE354877T1 (de) Optisch gepumpte hochleistungshalbleiterlaser mit externem resonator
EP3118947B1 (de) Verfahren zur reduzierung des intensitätsrauschens eines wellenlängen-stabilisierten trapez-diodenlasersystems
Kojima et al. Stabilization of a high-power diode-side-pumped intracavity-frequency-doubled cw Nd: YAG laser by compensating for thermal lensing of a KTP crystal and Nd: YAG rods
US20100027571A1 (en) Stabilized near-infrared laser
US6574255B1 (en) High-power external-cavity optically-pumped semiconductor lasers
US6298076B1 (en) High-power external-cavity optically-pumped semiconductor lasers
WO2006087650A3 (en) All-solid-state uv laser system
Hilbich et al. New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser
Werner et al. Direct modulation capabilities of micro-integrated laser sources in the yellow–green spectral range
Plaessmann et al. Reducing pulse durations in diode pumped Q-switched solid-state lasers
Capmany et al. CW end-pumped Nd3+: LaBGeO5 mini laser for self-frequency-doubling
Blume et al. Miniaturized Master-Oscillator Power-Amplifier emitting at 626 nm
Goldberg et al. High power semiconductor amplifiers
Waarts et al. Second Harmonic Generation of a High Power Coherent Laser Diode
Brick et al. High power semiconductor disk lasers
Kozlovsky et al. Resonator-enhanced frequency doubling in an extended-cavity diode laser
Lutgen et al. 0.7 W green frequency doubled semiconductor disk laser
Woll et al. Generation of 0.8 W of blue light by frequency doubling the output of a tapered InGaAs diode amplifier in critically phase-matched LBO
Freitag et al. Miniature Nd: YAG Ring Lasers with High Single-Frequency Output Power at 946nm
Bu et al. Diode-pumped Nd: YAG/LBO CW yellow laser at 588.9 nm
Young et al. Lasers for a trapped Hg/sup+/optical frequency standard
Garcia et al. CW mode-locked deep UV pulses at an average power of 800 mW
Suris Influence of spontaneous fluctuations on the emission spectrum of semiconductor laser.

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties