ATE333206T1 - Methode zum stoppen von ionen und verunreinigungen in plasma-strahlungquellen im extremem-ultaviolett oder weichen röntgenbereich durch verwendung von krypton - Google Patents

Methode zum stoppen von ionen und verunreinigungen in plasma-strahlungquellen im extremem-ultaviolett oder weichen röntgenbereich durch verwendung von krypton

Info

Publication number
ATE333206T1
ATE333206T1 AT01830644T AT01830644T ATE333206T1 AT E333206 T1 ATE333206 T1 AT E333206T1 AT 01830644 T AT01830644 T AT 01830644T AT 01830644 T AT01830644 T AT 01830644T AT E333206 T1 ATE333206 T1 AT E333206T1
Authority
AT
Austria
Prior art keywords
krypton
ultaviolet
impurities
extreme
soft
Prior art date
Application number
AT01830644T
Other languages
English (en)
Inventor
Francesco Flora
Chengen Zheng
Luca Mezi
Original Assignee
Enea Ente Nuove Tec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enea Ente Nuove Tec filed Critical Enea Ente Nuove Tec
Application granted granted Critical
Publication of ATE333206T1 publication Critical patent/ATE333206T1/de

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical Or Physical Treatment Of Fibers (AREA)
  • Coloring (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AT01830644T 2000-12-01 2001-10-11 Methode zum stoppen von ionen und verunreinigungen in plasma-strahlungquellen im extremem-ultaviolett oder weichen röntgenbereich durch verwendung von krypton ATE333206T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2000RM000636A IT1316249B1 (it) 2000-12-01 2000-12-01 Procedimento di abbattimento del flusso di ioni e di piccoli detritiin sorgenti di raggi-x molli da plasma, tramite l'uso di kripton.

Publications (1)

Publication Number Publication Date
ATE333206T1 true ATE333206T1 (de) 2006-08-15

Family

ID=11455032

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01830644T ATE333206T1 (de) 2000-12-01 2001-10-11 Methode zum stoppen von ionen und verunreinigungen in plasma-strahlungquellen im extremem-ultaviolett oder weichen röntgenbereich durch verwendung von krypton

Country Status (4)

Country Link
EP (1) EP1211918B1 (de)
AT (1) ATE333206T1 (de)
DE (1) DE60121412T2 (de)
IT (1) IT1316249B1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3782736B2 (ja) * 2002-01-29 2006-06-07 キヤノン株式会社 露光装置及びその制御方法
EP1349008A1 (de) 2002-03-28 2003-10-01 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
EP1349010B1 (de) * 2002-03-28 2014-12-10 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
JP4105616B2 (ja) 2002-08-15 2008-06-25 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフ投影装置およびこの装置用の反射鏡アセンブリ
EP1389747B1 (de) * 2002-08-15 2008-10-15 ASML Netherlands B.V. Lithographischer Projektionsapparat und Reflektoranordnung für die Verwendung in diesem Apparat
JP2004228456A (ja) * 2003-01-27 2004-08-12 Canon Inc 露光装置
US7217940B2 (en) 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
EP1491963A3 (de) * 2003-06-27 2005-08-17 ASML Netherlands B.V. Lasererzeugtes Plasma-Strahlungssystem mit Kontaminationsschutz
SG118268A1 (en) 2003-06-27 2006-01-27 Asml Netherlands Bv Laser produced plasma radiation system with foil trap
US7167232B2 (en) 2003-12-30 2007-01-23 Asml Netherlands B.V. Lithographic apparatus and radiation source comprising a debris-mitigation system and method for mitigating debris particles in a lithographic apparatus
WO2005096099A2 (en) 2004-03-31 2005-10-13 Philips Intellectual Property & Standards Gmbh Removal of particles generated by a radiation source
US7109503B1 (en) * 2005-02-25 2006-09-19 Cymer, Inc. Systems for protecting internal components of an EUV light source from plasma-generated debris
US8018574B2 (en) 2005-06-30 2011-09-13 Asml Netherlands B.V. Lithographic apparatus, radiation system and device manufacturing method
US7368733B2 (en) * 2006-03-30 2008-05-06 Asml Netherlands B.V. Contamination barrier and lithographic apparatus comprising same
US7839482B2 (en) * 2007-05-21 2010-11-23 Asml Netherlands B.V. Assembly comprising a radiation source, a reflector and a contaminant barrier
US7719661B2 (en) * 2007-11-27 2010-05-18 Nikon Corporation Illumination optical apparatus, exposure apparatus, and method for producing device
JP5702164B2 (ja) * 2010-03-18 2015-04-15 ギガフォトン株式会社 極端紫外光源装置、極端紫外光源装置の制御方法及びターゲット供給装置
WO2012177900A1 (en) 2011-06-22 2012-12-27 Research Triangle Institute, International Bipolar microelectronic device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4408338A (en) * 1981-12-31 1983-10-04 International Business Machines Corporation Pulsed electromagnetic radiation source having a barrier for discharged debris
US4692934A (en) * 1984-11-08 1987-09-08 Hampshire Instruments X-ray lithography system
NL1008352C2 (nl) * 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
AU1241401A (en) * 1999-10-27 2001-05-08 Jmar Research, Inc. Method and radiation generating system using microtargets

Also Published As

Publication number Publication date
IT1316249B1 (it) 2003-04-03
ITRM20000636A0 (it) 2000-12-01
ITRM20000636A1 (it) 2002-06-01
DE60121412T2 (de) 2007-02-22
EP1211918A1 (de) 2002-06-05
EP1211918B1 (de) 2006-07-12
DE60121412D1 (de) 2006-08-24

Similar Documents

Publication Publication Date Title
ATE333206T1 (de) Methode zum stoppen von ionen und verunreinigungen in plasma-strahlungquellen im extremem-ultaviolett oder weichen röntgenbereich durch verwendung von krypton
CN101788770B (zh) 组装薄胶膜于光掩模上的方法、设备及其组装体
EP1746460A3 (de) Photomaskenrohling, Photomaske und deren Herstellungsverfahren
TW200707562A (en) Contaminant removal apparatus and method therefor
TW200534048A (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby
CN111913346A (zh) 一种光掩模组件及光刻系统
WO2004084592A3 (en) Device for and method of generating extreme ultraviolet and/or soft x-ray radiation by means of a plasma
Escher KrF laser induced color centers in commercial fused silicas
ATE445579T1 (de) Synthetisches quarzglas für optisches element, projektionsbelichtungsvorrichtung und projektionsbelichtungsverfahren
JP2005519738A (ja) 光学表面の汚染除去を行う方法及び装置
CA2062141A1 (en) Method and device for measuring the concentration of particles present in a gas
TW200510921A (en) Method and device for the manufacture of a filter for retaining a substance originating from a radiation source
EP0985643A3 (de) Verfahren zur Herstellung synthetischen Kieselglases zur Anwendung für ArF-Excimer-Laserlithographie
TW200707539A (en) Method of distancing a bubble and bubble displacement apparatus
EP1548804A4 (de) Optisches beleuchtungssystem, belichtungssystem und belichtungsverfahren
JP4772172B2 (ja) 合成石英ガラスの評価方法
TWI293779B (en) Method and system for cleaning semiconductor device
JP2006032991A (ja) 露光装置の光学素子クリーニング方法
JP3712706B2 (ja) 露光装置及び露光装置の洗浄方法
JPH04365050A (ja) 投影露光装置及び半導体デバイス製造方法
JP2007142244A (ja) 光学系
SU1271295A1 (ru) Способ экспонировани рентгенорезистов
Seward et al. Radiation-induced density and absorption changes in fused silica
JP2004095652A (ja) 光学装置
KR100711908B1 (ko) 레티클 및 그 제조 방법, 그리고 노광 장비 및 그 구동방법

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties