ITRM20000636A0 - Procedimento di abbattimento del flusso di ioni e di piccoli detriti in sorgenti di raggi-x molli da plasma, tramite l'uso di kripton. - Google Patents

Procedimento di abbattimento del flusso di ioni e di piccoli detriti in sorgenti di raggi-x molli da plasma, tramite l'uso di kripton.

Info

Publication number
ITRM20000636A0
ITRM20000636A0 IT2000RM000636A ITRM20000636A ITRM20000636A0 IT RM20000636 A0 ITRM20000636 A0 IT RM20000636A0 IT 2000RM000636 A IT2000RM000636 A IT 2000RM000636A IT RM20000636 A ITRM20000636 A IT RM20000636A IT RM20000636 A0 ITRM20000636 A0 IT RM20000636A0
Authority
IT
Italy
Prior art keywords
kripton
amounting
ions
procedure
flow
Prior art date
Application number
IT2000RM000636A
Other languages
English (en)
Inventor
Luca Mezi
Francesco Flora
Chengen Zheng
Original Assignee
Enea Ente Nuove Tec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enea Ente Nuove Tec filed Critical Enea Ente Nuove Tec
Priority to IT2000RM000636A priority Critical patent/IT1316249B1/it
Publication of ITRM20000636A0 publication Critical patent/ITRM20000636A0/it
Priority to EP01830644A priority patent/EP1211918B1/en
Priority to AT01830644T priority patent/ATE333206T1/de
Priority to DE60121412T priority patent/DE60121412T2/de
Publication of ITRM20000636A1 publication Critical patent/ITRM20000636A1/it
Application granted granted Critical
Publication of IT1316249B1 publication Critical patent/IT1316249B1/it

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Or Physical Treatment Of Fibers (AREA)
  • Coloring (AREA)
IT2000RM000636A 2000-12-01 2000-12-01 Procedimento di abbattimento del flusso di ioni e di piccoli detritiin sorgenti di raggi-x molli da plasma, tramite l'uso di kripton. IT1316249B1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT2000RM000636A IT1316249B1 (it) 2000-12-01 2000-12-01 Procedimento di abbattimento del flusso di ioni e di piccoli detritiin sorgenti di raggi-x molli da plasma, tramite l'uso di kripton.
EP01830644A EP1211918B1 (en) 2000-12-01 2001-10-11 Method of stopping ions and small debris in extreme-ultraviolet and soft x-rays plasma sources by using krypton
AT01830644T ATE333206T1 (de) 2000-12-01 2001-10-11 Methode zum stoppen von ionen und verunreinigungen in plasma-strahlungquellen im extremem-ultaviolett oder weichen röntgenbereich durch verwendung von krypton
DE60121412T DE60121412T2 (de) 2000-12-01 2001-10-11 Methode zum Stoppen von Ionen und Verunreinigungen in Plasma-Strahlungquellen im extremem-ultaviolett oder weichen Röntgenbereich durch Verwendung von Krypton

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2000RM000636A IT1316249B1 (it) 2000-12-01 2000-12-01 Procedimento di abbattimento del flusso di ioni e di piccoli detritiin sorgenti di raggi-x molli da plasma, tramite l'uso di kripton.

Publications (3)

Publication Number Publication Date
ITRM20000636A0 true ITRM20000636A0 (it) 2000-12-01
ITRM20000636A1 ITRM20000636A1 (it) 2002-06-01
IT1316249B1 IT1316249B1 (it) 2003-04-03

Family

ID=11455032

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2000RM000636A IT1316249B1 (it) 2000-12-01 2000-12-01 Procedimento di abbattimento del flusso di ioni e di piccoli detritiin sorgenti di raggi-x molli da plasma, tramite l'uso di kripton.

Country Status (4)

Country Link
EP (1) EP1211918B1 (it)
AT (1) ATE333206T1 (it)
DE (1) DE60121412T2 (it)
IT (1) IT1316249B1 (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3782736B2 (ja) * 2002-01-29 2006-06-07 キヤノン株式会社 露光装置及びその制御方法
EP1349010B1 (en) * 2002-03-28 2014-12-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1349008A1 (en) * 2002-03-28 2003-10-01 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100589236B1 (ko) 2002-08-15 2006-06-14 에이에스엠엘 네델란즈 비.브이. 리소그래피 투영장치 및 상기 장치에 사용하는 반사기조립체
EP1389747B1 (en) * 2002-08-15 2008-10-15 ASML Netherlands B.V. Lithographic projection apparatus and reflector asembly for use in said apparatus
JP2004228456A (ja) * 2003-01-27 2004-08-12 Canon Inc 露光装置
US7217940B2 (en) 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
SG118268A1 (en) 2003-06-27 2006-01-27 Asml Netherlands Bv Laser produced plasma radiation system with foil trap
EP1491963A3 (en) * 2003-06-27 2005-08-17 ASML Netherlands B.V. Laser produced plasma radiation system with contamination barrier
US7167232B2 (en) 2003-12-30 2007-01-23 Asml Netherlands B.V. Lithographic apparatus and radiation source comprising a debris-mitigation system and method for mitigating debris particles in a lithographic apparatus
US8173975B2 (en) 2004-03-31 2012-05-08 Koninklijke Philips Electronics N.V. Method and device for removing particles generated by means of a radiation source during generation of short-wave radiation
US7109503B1 (en) * 2005-02-25 2006-09-19 Cymer, Inc. Systems for protecting internal components of an EUV light source from plasma-generated debris
US8018574B2 (en) 2005-06-30 2011-09-13 Asml Netherlands B.V. Lithographic apparatus, radiation system and device manufacturing method
US7368733B2 (en) * 2006-03-30 2008-05-06 Asml Netherlands B.V. Contamination barrier and lithographic apparatus comprising same
US7839482B2 (en) * 2007-05-21 2010-11-23 Asml Netherlands B.V. Assembly comprising a radiation source, a reflector and a contaminant barrier
US7719661B2 (en) 2007-11-27 2010-05-18 Nikon Corporation Illumination optical apparatus, exposure apparatus, and method for producing device
JP5702164B2 (ja) * 2010-03-18 2015-04-15 ギガフォトン株式会社 極端紫外光源装置、極端紫外光源装置の制御方法及びターゲット供給装置
WO2012177900A1 (en) 2011-06-22 2012-12-27 Research Triangle Institute, International Bipolar microelectronic device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4408338A (en) * 1981-12-31 1983-10-04 International Business Machines Corporation Pulsed electromagnetic radiation source having a barrier for discharged debris
US4692934A (en) * 1984-11-08 1987-09-08 Hampshire Instruments X-ray lithography system
NL1008352C2 (nl) * 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
EP1232516A4 (en) * 1999-10-27 2003-03-12 Jmar Res Inc METHOD AND SYSTEM FOR GENERATING RADIATION USING MICROCIBLES

Also Published As

Publication number Publication date
EP1211918B1 (en) 2006-07-12
DE60121412T2 (de) 2007-02-22
ATE333206T1 (de) 2006-08-15
IT1316249B1 (it) 2003-04-03
ITRM20000636A1 (it) 2002-06-01
DE60121412D1 (de) 2006-08-24
EP1211918A1 (en) 2002-06-05

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