ATE305667T1 - Magnetsche logische schaltung mit magnetischen quantenpunkten - Google Patents

Magnetsche logische schaltung mit magnetischen quantenpunkten

Info

Publication number
ATE305667T1
ATE305667T1 AT00968076T AT00968076T ATE305667T1 AT E305667 T1 ATE305667 T1 AT E305667T1 AT 00968076 T AT00968076 T AT 00968076T AT 00968076 T AT00968076 T AT 00968076T AT E305667 T1 ATE305667 T1 AT E305667T1
Authority
AT
Austria
Prior art keywords
magnetic
logical circuit
quantum points
points
dots
Prior art date
Application number
AT00968076T
Other languages
English (en)
Inventor
Russell Cowburn
Original Assignee
Univ Cambridge Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Cambridge Tech filed Critical Univ Cambridge Tech
Application granted granted Critical
Publication of ATE305667T1 publication Critical patent/ATE305667T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/16—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices
    • H03K19/168—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices using thin-film devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/195—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using superconductive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/94—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Soft Magnetic Materials (AREA)
  • Semiconductor Memories (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Magnetic Heads (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Editing Of Facsimile Originals (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT00968076T 1999-10-25 2000-10-11 Magnetsche logische schaltung mit magnetischen quantenpunkten ATE305667T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9925213.2A GB9925213D0 (en) 1999-10-25 1999-10-25 Magnetic logic elements
PCT/GB2000/003915 WO2001031789A2 (en) 1999-10-25 2000-10-11 Magnetic logic device having magnetic quantum dots

Publications (1)

Publication Number Publication Date
ATE305667T1 true ATE305667T1 (de) 2005-10-15

Family

ID=10863330

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00968076T ATE305667T1 (de) 1999-10-25 2000-10-11 Magnetsche logische schaltung mit magnetischen quantenpunkten

Country Status (15)

Country Link
US (1) US6774391B1 (de)
EP (1) EP1238460B1 (de)
JP (1) JP2003513438A (de)
KR (1) KR100737992B1 (de)
CN (1) CN1295876C (de)
AT (1) ATE305667T1 (de)
AU (1) AU7803600A (de)
CA (1) CA2386426A1 (de)
DE (1) DE60022900T2 (de)
ES (1) ES2261245T3 (de)
GB (1) GB9925213D0 (de)
HK (1) HK1046787B (de)
RU (1) RU2231214C2 (de)
WO (1) WO2001031789A2 (de)
ZA (1) ZA200203232B (de)

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US20060262593A1 (en) * 2004-07-27 2006-11-23 Stephane Aouba Magnetic memory composition and method of manufacture
US7212026B2 (en) * 2004-10-29 2007-05-01 Intel Corporation Spin-orbital quantum cellular automata logic devices and systems
US7533068B2 (en) 2004-12-23 2009-05-12 D-Wave Systems, Inc. Analog processor comprising quantum devices
US7619437B2 (en) * 2004-12-30 2009-11-17 D-Wave Systems, Inc. Coupling methods and architectures for information processing
US7528456B1 (en) * 2005-03-01 2009-05-05 The Regents Of The University Of California Nano-scale computational architectures with spin wave bus
US7898282B2 (en) 2005-04-26 2011-03-01 D-Wave Systems Inc. Systems, devices, and methods for controllably coupling qubits
JP2009506588A (ja) * 2005-06-07 2009-02-12 ザ ルーテル ユニバーシティ アソシエイション、インコーポレイテッド 量子ドットセルオートマトン方法及び素子
RU2008107998A (ru) 2005-08-03 2009-09-10 Инджениа Текнолоджи Лимитед (Gb) Доступ к памяти
US7265004B2 (en) * 2005-11-14 2007-09-04 Freescale Semiconductor, Inc. Electronic devices including a semiconductor layer and a process for forming the same
US7701756B2 (en) 2005-12-21 2010-04-20 Governing Council Of The University Of Toronto Magnetic memory composition and method of manufacture
US7535070B2 (en) * 2006-01-30 2009-05-19 The Regents Of The University Of California Spin-wave architectures
US7629220B2 (en) * 2006-06-30 2009-12-08 Freescale Semiconductor, Inc. Method for forming a semiconductor device and structure thereof
JP5313912B2 (ja) 2006-12-05 2013-10-09 ディー−ウェイブ システムズ，インコーポレイテッド 量子プロセッサ要素の局所的プログラミングのためのシステム、方法、および装置
WO2008083498A1 (en) 2007-01-12 2008-07-17 D-Wave Systems, Inc. Systems, devices and methods for interconnected processor topology
US8234103B2 (en) 2007-04-05 2012-07-31 D-Wave Systems Inc. Physical realizations of a universal adiabatic quantum computer
WO2008134875A1 (en) 2007-05-02 2008-11-13 D-Wave Systems, Inc. Systems, devices, and methods for controllably coupling qubits
US7880529B2 (en) 2007-09-25 2011-02-01 D-Wave Systems Inc. Systems, devices, and methods for controllably coupling qubits
US8102185B2 (en) 2008-01-28 2012-01-24 D-Wave Systems Inc. Systems, devices, and methods for controllably coupling qubits
US8659852B2 (en) 2008-04-21 2014-02-25 Seagate Technology Llc Write-once magentic junction memory array
US7855911B2 (en) * 2008-05-23 2010-12-21 Seagate Technology Llc Reconfigurable magnetic logic device using spin torque
US7852663B2 (en) * 2008-05-23 2010-12-14 Seagate Technology Llc Nonvolatile programmable logic gates and adders
US8134441B1 (en) * 2008-06-02 2012-03-13 The Regents Of The University Of California Nanomagnetic signal propagation and logic gates
US7881098B2 (en) 2008-08-26 2011-02-01 Seagate Technology Llc Memory with separate read and write paths
US7985994B2 (en) 2008-09-29 2011-07-26 Seagate Technology Llc Flux-closed STRAM with electronically reflective insulative spacer
US8169810B2 (en) 2008-10-08 2012-05-01 Seagate Technology Llc Magnetic memory with asymmetric energy barrier
US8089132B2 (en) 2008-10-09 2012-01-03 Seagate Technology Llc Magnetic memory with phonon glass electron crystal material
US8039913B2 (en) 2008-10-09 2011-10-18 Seagate Technology Llc Magnetic stack with laminated layer
US8045366B2 (en) 2008-11-05 2011-10-25 Seagate Technology Llc STRAM with composite free magnetic element
US8043732B2 (en) 2008-11-11 2011-10-25 Seagate Technology Llc Memory cell with radial barrier
US7826181B2 (en) 2008-11-12 2010-11-02 Seagate Technology Llc Magnetic memory with porous non-conductive current confinement layer
US8289756B2 (en) 2008-11-25 2012-10-16 Seagate Technology Llc Non volatile memory including stabilizing structures
US7826259B2 (en) 2009-01-29 2010-11-02 Seagate Technology Llc Staggered STRAM cell
US7880496B1 (en) 2009-02-09 2011-02-01 University Of South Florida Conservative logic gate for design of quantum dot cellular automata circuits
US7999338B2 (en) 2009-07-13 2011-08-16 Seagate Technology Llc Magnetic stack having reference layers with orthogonal magnetization orientation directions
US8138874B1 (en) 2009-07-20 2012-03-20 The Regents Of The University Of California Nanomagnetic register
US9196280B2 (en) * 2009-11-12 2015-11-24 Marquette University Low-field magnetic domain wall injection pad and high-density storage wire
US8331135B2 (en) * 2009-12-22 2012-12-11 Globalfoundries Inc. Signal control elements in ferromagnetic logic
US8766754B2 (en) 2012-07-18 2014-07-01 The Regents Of The University Of California Concave nanomagnets with widely tunable anisotropy
WO2015038118A1 (en) * 2013-09-11 2015-03-19 Intel Corporation Clocked all-spin logic circuit
US9093165B2 (en) 2013-09-30 2015-07-28 International Business Machines Corporation Distributed current clock for nano-magnetic element array
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WO2017039793A1 (en) 2015-08-28 2017-03-09 University Of South Florida Magnetic coprocessor and method of use
US10198402B1 (en) 2015-08-28 2019-02-05 University Of South Florida Magnetic coprocessor and method of use
WO2017074925A1 (en) * 2015-10-26 2017-05-04 President And Fellows Of Harvard College Architecture for achieving stable wave propagation through a soft material
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US11105866B2 (en) 2018-06-05 2021-08-31 D-Wave Systems Inc. Dynamical isolation of a cryogenic processor
US11839164B2 (en) 2019-08-19 2023-12-05 D-Wave Systems Inc. Systems and methods for addressing devices in a superconducting circuit
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Also Published As

Publication number Publication date
AU7803600A (en) 2001-05-08
JP2003513438A (ja) 2003-04-08
HK1046787A1 (en) 2003-01-24
US6774391B1 (en) 2004-08-10
ZA200203232B (en) 2003-08-26
HK1046787B (zh) 2006-01-06
GB9925213D0 (en) 1999-12-22
CN1295876C (zh) 2007-01-17
DE60022900T2 (de) 2006-06-14
RU2002113658A (ru) 2004-02-10
KR100737992B1 (ko) 2007-07-13
CN1390388A (zh) 2003-01-08
CA2386426A1 (fr) 2001-05-03
WO2001031789A2 (en) 2001-05-03
KR20020069006A (ko) 2002-08-28
EP1238460B1 (de) 2005-09-28
RU2231214C2 (ru) 2004-06-20
DE60022900D1 (de) 2005-11-03
EP1238460A2 (de) 2002-09-11
WO2001031789A3 (en) 2002-05-23
ES2261245T3 (es) 2006-11-16

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