ATE303613T1 - Verfahren zur messung der ausrichtung eines substrats bezüglich einer referenz-ausrichtmarke - Google Patents

Verfahren zur messung der ausrichtung eines substrats bezüglich einer referenz-ausrichtmarke

Info

Publication number
ATE303613T1
ATE303613T1 AT01272159T AT01272159T ATE303613T1 AT E303613 T1 ATE303613 T1 AT E303613T1 AT 01272159 T AT01272159 T AT 01272159T AT 01272159 T AT01272159 T AT 01272159T AT E303613 T1 ATE303613 T1 AT E303613T1
Authority
AT
Austria
Prior art keywords
alignment
substrate
mark
respect
measuring
Prior art date
Application number
AT01272159T
Other languages
English (en)
Inventor
Rene Monshouwer
Jacobus H M Nijzen
Der Werf Jan E Van
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Application granted granted Critical
Publication of ATE303613T1 publication Critical patent/ATE303613T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
AT01272159T 2000-12-27 2001-12-10 Verfahren zur messung der ausrichtung eines substrats bezüglich einer referenz-ausrichtmarke ATE303613T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00204825 2000-12-27
PCT/IB2001/002462 WO2002052350A1 (en) 2000-12-27 2001-12-10 Method of measuring alignment of a substrate with respect to a reference alignment mark

Publications (1)

Publication Number Publication Date
ATE303613T1 true ATE303613T1 (de) 2005-09-15

Family

ID=8172582

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01272159T ATE303613T1 (de) 2000-12-27 2001-12-10 Verfahren zur messung der ausrichtung eines substrats bezüglich einer referenz-ausrichtmarke

Country Status (8)

Country Link
US (2) US6937334B2 (de)
EP (1) EP1348149B1 (de)
JP (1) JP4150256B2 (de)
KR (1) KR100830660B1 (de)
AT (1) ATE303613T1 (de)
DE (1) DE60113153T2 (de)
TW (1) TW556296B (de)
WO (1) WO2002052350A1 (de)

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DE10309084A1 (de) 2003-03-03 2004-09-16 Carl Zeiss Smt Ag Reflektives optisches Element und EUV-Lithographiegerät
US6864956B1 (en) * 2003-03-19 2005-03-08 Silterra Malaysia Sdn. Bhd. Dual phase grating alignment marks
DE10319005A1 (de) * 2003-04-25 2004-11-25 Carl Zeiss Smt Ag Reflektives optisches Element, optisches System und EUV-Lithographievorrichtung
US7349105B2 (en) * 2004-09-01 2008-03-25 Intel Corporation Method and apparatus for measuring alignment of layers in photolithographic processes
US7453577B2 (en) 2004-12-14 2008-11-18 Asml Netherlands B.V. Apparatus and method for inspecting a patterned part of a sample
JP2009509156A (ja) * 2005-09-21 2009-03-05 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 物体の運動を検出するシステム
DE102005062618B4 (de) * 2005-12-23 2008-05-08 Carl Zeiss Smt Ag Optische Abbildungseinrichtung und Abbildungsverfahren mit Bestimmung von Abbildungsfehlern
US7433018B2 (en) * 2005-12-27 2008-10-07 Asml Netherlands B.V. Pattern alignment method and lithographic apparatus
TWI294640B (en) * 2006-02-16 2008-03-11 Nanya Technology Corp Alignment mark and alignment method for the fabrication of trench-capacitor dram devices
US7656529B1 (en) * 2006-05-30 2010-02-02 Mehrdad Nikoonahad Overlay error measurement using fourier optics
US20080036984A1 (en) * 2006-08-08 2008-02-14 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7953550B1 (en) 2007-01-04 2011-05-31 Ag Sense, L.L.C. Center pivot irrigation system position sensing system
US7837907B2 (en) * 2007-07-20 2010-11-23 Molecular Imprints, Inc. Alignment system and method for a substrate in a nano-imprint process
JP5066401B2 (ja) * 2007-07-24 2012-11-07 株式会社森精機製作所 定点検出装置及び変位測定装置
DE102008004762A1 (de) * 2008-01-16 2009-07-30 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie mit einer Messeinrichtung
KR101573463B1 (ko) * 2009-02-26 2015-12-01 삼성전자주식회사 정렬부를 포함하는 반도체 장비
US9122172B2 (en) 2010-06-04 2015-09-01 Advantech Global, Ltd Reflection shadow mask alignment using coded apertures
KR20150116916A (ko) * 2010-06-04 2015-10-16 어드밴텍 글로벌, 리미티드 코딩된 어퍼처를 이용한 섀도우 마스크 정렬
US9580792B2 (en) 2010-06-04 2017-02-28 Advantech Global, Ltd Shadow mask alignment using variable pitch coded apertures
JP6381197B2 (ja) * 2013-10-31 2018-08-29 キヤノン株式会社 計測装置、計測方法、リソグラフィ装置、及び物品製造方法
EP2980669B1 (de) * 2014-08-01 2017-09-20 AGCO Corporation Bestimmung von feldmerkmalen mithilfe optischer erkennung
EP3133369B1 (de) * 2015-08-19 2017-12-20 Mitutoyo Corporation Verfahren zur messung einer höhenkarte von mehreren sichtfeldern und kombination davon zur ermittlung einer zusammengesetzten höhenkarte mit verminderter empfindlichkeit gegenüber instrumentendrift
KR102170147B1 (ko) * 2015-12-28 2020-10-27 에이에스엠엘 네델란즈 비.브이. 모듈레이션 기술을 이용한 메트롤로지를 위한 대체 타겟 디자인
JP6971567B2 (ja) * 2016-12-16 2021-11-24 キヤノン株式会社 位置合わせ装置、位置合わせ方法、リソグラフィ装置、および物品製造方法
US11982521B2 (en) * 2017-02-23 2024-05-14 Nikon Corporation Measurement of a change in a geometrical characteristic and/or position of a workpiece
EP3454129A1 (de) * 2017-09-07 2019-03-13 ASML Netherlands B.V. Schlagmuster zur ausrichtung auf kleine metrologieziele
EP3714080A1 (de) * 2017-12-29 2020-09-30 Microsoft Technology Licensing LLC Herstellungsverfahren mittels dampfabscheidung durch eine positionierte schattenmaske
EP3629086A1 (de) * 2018-09-25 2020-04-01 ASML Netherlands B.V. Verfahren und vorrichtung zum bestimmen eines strahlungsintensitätsprofils
CN110411344B (zh) * 2019-08-06 2021-07-20 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 一种校准方法、校准装置、校准系统及电子设备
WO2021112034A1 (ja) 2019-12-03 2021-06-10 株式会社荏原製作所 研磨装置および研磨方法
WO2023012338A1 (en) * 2021-08-06 2023-02-09 Asml Netherlands B.V. Metrology target, patterning device and metrology method

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Also Published As

Publication number Publication date
DE60113153D1 (de) 2005-10-06
EP1348149B1 (de) 2005-08-31
US6937334B2 (en) 2005-08-30
US20020080365A1 (en) 2002-06-27
TW556296B (en) 2003-10-01
JP4150256B2 (ja) 2008-09-17
WO2002052350A1 (en) 2002-07-04
KR20020077924A (ko) 2002-10-14
JP2004517476A (ja) 2004-06-10
US7095499B2 (en) 2006-08-22
US20050231698A1 (en) 2005-10-20
EP1348149A1 (de) 2003-10-01
DE60113153T2 (de) 2006-06-29
KR100830660B1 (ko) 2008-05-20

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